Two new 1.2kV SiC power modules with common configurations provide small size and high power density, simplifying inverter design
STMicroelectronics has recently released two new STPOWER modules with 1200V silicon-carbide (SiC) MOSFETs in common configurations. Both modules come in a ST ACEPACK 2 package, able to provide high power density and easy assembly.
The A2F12M12W2-F1, the first of the new modules, is a four-pack module that offers a practical and compact full-bridge solution for circuits like DC/DC converters. The other module, the A2U12M12W2-F2, combines high conduction and switching efficiency with reliable output voltage by using a three-level T-type topology.
These modules’ MOSFETs are based on second-generation SiC technology from ST, which provides a remarkable RDS(on) x die-area figure of merit and ensures strong current-handling capacity with low loss. Both full-bridge and T-type topologies can handle high-power applications with 13mΩ typical RDS(on) per die and guarantee good energy efficiency with simpler thermal control due to reduced dissipation.
Direct bonded copper (DBC) die attachment and an appropriate alumina substrate provide the ACEPACK 2 package its small size and great power density. In equipment that may be subjected to extreme environments, such as electric vehicles (EVs), power conversion for charging stations, energy storage, and solar energy, the external connections are press fit pins to facilitate assembly. The kit offers insulation up to 2.5 kVrms and includes an integrated NTC temperature sensor for system protection and diagnostics.
Both the A2U12M12W2-F2 three-level T-type inverter and the A2F12M12W2-F1 four-pack configuration modules are now in production and the price is $235.20 per unit.
