CEDM7001TR Tech Specifications

Central  CEDM7001TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer Central
Package / Case SC-101, SOT-883
Mounting Type Surface Mount
Mount Surface Mount
Surface Mount YES
Supplier Device Package SOT-883
Number of Terminals 3Terminals
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100mA (Ta)
Power Dissipation (Max) 100mW (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
RoHS Compliant
Package Description HALOGEN FREE AND ULTRA MINI-3
Package Style CHIP CARRIER
Package Body Material UNSPECIFIED
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code No
Manufacturer Part Number CEDM7001TR
Package Shape RECTANGULAR
Manufacturer Central Semiconductor Corp
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP
Risk Rank 5.04
Drain Current-Max (ID) 0.1 A
Operating Temperature -65°C ~ 150°C (TJ)
Series --
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code No
Part Status Active
ECCN Code EAR99
Resistance 3 Ω
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150 °C
Min Operating Temperature -65 °C
Product Attribute Attribute Value
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Max Power Dissipation 100 mW
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-XBCC-N3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 100 mW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 900mV @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 9pF @ 3V
Gate Charge (Qg) (Max) @ Vgs 0.57nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) 10V
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 100 mA
Gate to Source Voltage (Vgs) 10 V
Drain Current-Max (Abs) (ID) 0.2 A
Drain-source On Resistance-Max 3 Ω
Drain to Source Breakdown Voltage 20 V
Input Capacitance 9 pF
DS Breakdown Voltage-Min 20 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.1 W
FET Feature --
Drain to Source Resistance 900 mΩ
Rds On Max 3 Ω
Lead Free Lead Free
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CEDM7001TR Comments

109 reviews

Mulligan
2021-02-27 00:00:00

Their range of products covers both common and hard-to-find components, a great resource for electronic enthusiasts.

DanielFletcher
2021-02-26 00:00:00

I have used this to measure various antennas, and it is useful.

Joshua
2021-02-25 00:00:00

This is great for imaging my retro-pc floppies. It worked out of the box with minimal setup. Hooked up my floppy drive, fired up my imaging software and it all just worked.

Jodie Smith
2021-02-25 00:00:00

Customer service was responsive.

Fernando
2021-01-23 00:00:00

I especially appreciate their detailed product descriptions and technical specifications, which allow me to make informed purchasing decisions.

Gareth Cattermole
2021-01-14 00:00:00

The shipping time was average, not exceptionally fast but within a reasonable timeframe.

Cate
2021-01-07 00:00:00

Competitive pricing without compromising on product quality.

Lip
2020-12-25 00:00:00

Simplify the process of finding specific components, Jakelectronics has a very easy-to-use interface to search for semiconductors, electronic components.

Sophia
2020-11-28 00:00:00

Great project!

Ali
2020-11-26 00:00:00

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