BUZ100S Tech Specifications

Infineon  BUZ100S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Supplier Device Package PG-TO220-3-1
Number of Terminals 3Terminals
Transistor Element Material SILICON
Continuous Drain Current Id 77
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Infineon Technologies
Power Dissipation (Max) 170W (Tc)
Product Status Active
Package Description PLASTIC, TO-220, 3 PIN
Package Style FLANGE MOUNT
Moisture Sensitivity Levels NOT SPECIFIED
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code No
Manufacturer Part Number BUZ100S
Package Shape RECTANGULAR
Manufacturer Rochester Electronics LLC
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Risk Rank 5.28
Part Package Code TO-220AB
Drain Current-Max (ID) 77 A
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Series SIPMOS®
JESD-609 Code e0
Pbfree Code No
Terminal Finish TIN LEAD
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4V @ 130µA
Input Capacitance (Ciss) (Max) @ Vds 2375 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Drain to Source Voltage (Vdss) 55 V
Vgs (Max) ±20V
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.015 Ω
Pulsed Drain Current-Max (IDM) 308 A
DS Breakdown Voltage-Min 55 V
Channel Type N
Avalanche Energy Rating (Eas) 380 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature -
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BUZ100S Documents

Download datasheets and manufacturer documentation for   BUZ100S

  • Datasheets

Others include   "BUZ10"   parts

The following parts include  'BUZ10'

Part # Manufacturer Package Availability
BUZ100S Infineon TO-220-3 5288
BUZ100S-E3045A Infineon Technologies - 832

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BUZ100S Comments

109 reviews

MichaelGraham
2022-03-31 00:00:00

when you need to connect this kind of port, this product makes it very easy.

Helen
2022-03-26 00:00:00

Very satisfied and will continue to repurchase.

AlexSmith
2022-02-24 00:00:00

Both product and code works as expected.

Tang
2022-02-17 00:00:00

The product quality met expectations, nothing extraordinary but satisfactory. The website interface is functional, could be improved for a smoother shopping experience.

Gareth
2022-02-04 00:00:00

Quick order processing and fast delivery

Patrick
2021-12-31 00:00:00

Ya good and arrive on time. thank you so much

BenjaminReed
2021-11-30 00:00:00

he Capacitance box works great and exactly how I expected it to, but the design of the Resistance & Inductance boxes is very different and requires reading the datasheet to understand how they are supposed to work.

Russell
2021-11-23 00:00:00

no complaints so far.

Fox
2021-10-08 00:00:00

Pricing was moderate, reflecting standard market rates.

Morla
2021-09-15 00:00:00

They have a wide selection of products and competitive prices. Despite some minor issues, their customer service team solved my problem and maintained good communication.

BUZ100S brand manufacturers: Infineon, MOST stock, BUZ100S reference price.Infineon. BUZ100S parameters, BUZ100S Datasheet PDF and pin diagram description download.You can use the BUZ100S Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BUZ100S pin diagram and circuit diagram and usage method of function,BUZ100S electronics tutorials.You can download from the MOST.