APTM120A29FTG Tech Specifications

Microchip  APTM120A29FTG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Microchip
Mounting Type Chassis Mount
Package / Case SP4
Surface Mount NO
Supplier Device Package SP4
Number of Terminals 12Terminals
Transistor Element Material SILICON
Continuous Drain Current Id 34
Package Bulk
Base Product Number APTM120
Current - Continuous Drain (Id) @ 25℃ 34A
Mfr Microchip Technology
Product Status Active
Factory Pack QuantityFactory Pack Quantity 1
Manufacturer Microchip
Brand Microchip Technology
RoHS Details
Package Description FLANGE MOUNT, R-XUFM-X12
Package Style FLANGE MOUNT
Moisture Sensitivity Levels 1
Package Body Material UNSPECIFIED
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number APTM120A29FTG
Package Shape RECTANGULAR
Number of Elements 2 Elements
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 5.25
Drain Current-Max (ID) 34 A
Operating Temperature -40°C ~ 150°C (TJ)
Series -
Packaging Tube
Product Attribute Attribute Value
JESD-609 Code e1
Pbfree Code Yes
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory Discrete Semiconductor Modules
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 12
JESD-30 Code R-XUFM-X12
Qualification Status Not Qualified
Configuration 2 N-Channel (Half Bridge)
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Power - Max 780W
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 348mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 10300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 374nC @ 10V
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Polarity/Channel Type N-CHANNEL
Product Type Discrete Semiconductor Modules
Drain-source On Resistance-Max 0.348 Ω
Pulsed Drain Current-Max (IDM) 136 A
DS Breakdown Voltage-Min 1200 V
Channel Type Dual N
Avalanche Energy Rating (Eas) 3000 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature -
Product Category Discrete Semiconductor Modules
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APTM120A29FTG Comments

109 reviews

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2024-03-06 00:00:00

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