MMBT3904FN3_R1_00001 Tech Specifications

Panjit  MMBT3904FN3_R1_00001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - Bipolar (BJT) - Single
Manufacturer Panjit
Package / Case DFN3
Mounting Type Surface Mount
Supplier Device Package 3-DFN (1x0.6)
Emitter- Base Voltage VEBO 6 V
Pd - Power Dissipation 250 mW
Transistor Polarity NPN
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 100 at 10 mA, 1 V
Collector-Emitter Saturation Voltage 300 mV
Unit Weight 0.000039 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 8000
Mounting Styles SMD/SMT
Gain Bandwidth Product fT -
Manufacturer Panjit
Brand Panjit
Maximum DC Collector Current 200 mA
DC Current Gain hFE Max 300 at 10 mA, 1 V
RoHS Details
Collector- Emitter Voltage VCEO Max 40 V
Product Attribute Attribute Value
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current-Collector (Ic) (Max) 200 mA
Mfr Panjit International Inc.
Product Status Active
Series GPT-03FNN
Packaging MouseReel
Operating Temperature -55°C ~ 150°C (TJ)
Subcategory Transistors
Technology Si
Configuration Single
Power - Max 250 mW
Product Type BJTs - Bipolar Transistors
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Frequency - Transition -
Collector Base Voltage (VCBO) 60 V
Continuous Collector Current 200 mA
Product Category Bipolar Transistors - BJT
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MMBT3904FN3_R1_00001 Comments

109 reviews

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2021-06-11 00:00:00

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2021-06-10 00:00:00

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