SCT4018KW7TL Tech Specifications

ROHM Semiconductor  SCT4018KW7TL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer ROHM Semiconductor
Package / Case TO-263-7L
Mounting Type Surface Mount
Supplier Device Package TO-263-7L
RoHS Details
Mounting Styles Through Hole
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV
Id - Continuous Drain Current 75 A
Rds On - Drain-Source Resistance 18 mOhms
Vgs - Gate-Source Voltage - 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage 4.8 V
Qg - Gate Charge 170 nC
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 267 W
Channel Mode Enhancement
Fall Time 11 ns
Forward Transconductance - Min 22 S
Factory Pack QuantityFactory Pack Quantity 1000
Typical Turn-Off Delay Time 50 ns
Typical Turn-On Delay Time 13 ns
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃ 75A (Tj)
Product Attribute Attribute Value
Drive Voltage (Max Rds On, Min Rds On) 18V
Mfr Rohm Semiconductor
Power Dissipation (Max) 267W
Product Status Active
MSL -
Continuous Drain Current Id 75A
Packaging MouseReel
Operating Temperature 175°C (TJ)
Series -
Configuration Single
Number of Channels 1 ChannelChannel
Power Dissipation 267W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 23.4mOhm @ 42A, 18V
Vgs(th) (Max) @ Id 4.8V @ 22.2mA
Input Capacitance (Ciss) (Max) @ Vds 4532 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 18 V
Rise Time 21 ns
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) +21V, -4V
Transistor Type 1 N-Channel
Channel Type N Channel
FET Feature -
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Part # Manufacturer Package Availability
SCT4018KW7TL ROHM Semiconductor TO-263-7L 1429

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SCT4018KW7TL Comments

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