STMICROELECTRONICS - BAT30F4 - Small Signal Schottky Diode, Single, 30 V, 300 mA, 310 mV, 4 A, 85 °C
The BAT30F4 uses 30 V Schottky barrier diodes in a 0201 package. This post covers its pinout, datasheet, application and more details about BAT30F4.
BAT30F4 Schottky Diode: BAT30F4 Datasheet, Pinout, Application [FAQ]
Elsa Cecillia |
26/04 |
BAT30F4
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BAT30F4 Pinout
BAT30F4 Pinout
BAT30F4 CAD Model
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BAT30F4 Symbol
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BAT30F4 Footprint
3D Model
BAT30F4 3D Model
BAT30F4 Description
The BAT30F4 is built of 30 V Schottky barrier diodes in a 0201 package. This device is intended for usage in smartphones, and it is particularly well-suited for rail-to-rail protection, where its low forward voltage drop will assist designers in achieving efficient IC protection.
BAT30F4 Feature
• Very low conduction losses
• Negligible switching losses
• 0201 package
• Low capacitance diode
• ECOPACK®2 and RoHS compliant
BAT30F4 Application
• Reverse polarity protection
• Fingerprint module
• Camera module
• Bluetooth wireless earbud
• Biometric computer card
BAT30F4 Package
BAT30F4 Package
BAT30F4 Manufacturer
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivalled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Specifications
STMicroelectronics BAT30F4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BAT30F4.
| Attribute | Value |
|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Factory Lead Time | 15 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 0201 (0603 Metric) |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Manufacturer Package Identifier | BAT30F4 |
| Number of Elements | 1 |
| Packaging | Cut Tape (CT) |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Capacitance | 10pF |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BAT30 |
| Attribute | Value |
|---|---|
| Case Code (Metric) | 0201 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 50μA @ 30V |
| Voltage - Forward (Vf) (Max) @ If | 310mV @ 10mA |
| Forward Current | 300mA |
| Operating Temperature - Junction | -30°C~85°C |
| Output Current-Max | 0.3A |
| Forward Voltage | 310mV |
| Max Reverse Voltage (DC) | 30V |
| Average Rectified Current | 300mA |
| Peak Reverse Current | 50μA |
| Max Repetitive Reverse Voltage (Vrrm) | 30V |
| Peak Non-Repetitive Surge Current | 4A |
| Reverse Voltage | 30V |
| Max Forward Surge Current (Ifsm) | 4A |
| Max Junction Temperature (Tj) | 150°C |
| Height | 320μm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
Datasheet PDF
Documents
Download datasheets and manufacturer documentation for
Frequently Asked Questions
FAQ
What is the BAT30F4 made of?
30 V Schottky barrier diodes.
What type of protection is the BAT30F4 particularly well-suited for?
Rail-to-rail.
What is a Schottky diode used for?
Schottky diodes are used for their low turn-on voltage, fast recovery time and low-loss energy at higher frequencies. These characteristics make Schottky diodes capable of rectifying a current by facilitating a quick transition from conducting to blocking state.
What is the difference between Schottky diode and normal diode?
One of the primary advantages of using a Schottky diode over a regular diode is its low forward voltage drop. This allows a Schottky diode to consume less voltage than a standard diode, using only 0.3-0.4V across its junctions.