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BC637 Description

The BC637 is an NPN medium power transistor series. The BC637 is housed in a TO-92 plastic case. The emitter, collector, and base leads emerge from the transistor from left to right when looking at the flat side with the leads oriented downward.

BC637 Pinout

The following figure is BC637 Pinout.

Pinout

BC637 CAD Model

The BC637 CAD Model is shown as follows.

Symbol

Footprint

3D Model

BC637 Features

• These are Pb−Free Devices*

• High current

• Two current gain selections

• High power dissipation capability

• Collector-Emitter Volt (Vceo): 60V

• Collector Current (Ic): 1.0A

• hfe: 40 @ 160mA

• Power Dissipation (Ptot): 625mW

• Current-Gain-Bandwidth (ftotal): 200MHz

• Type: NPN

Specifications

ON Semiconductor BC637 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC637.

Attribute Value
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Weight 201mg
Collector-Emitter Breakdown Voltage 60V
Collector-Emitter Saturation Voltage 500mV
Current-Collector (Ic) (Max) 1A
Number of Elements 1
hFEMin 40
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Max Power Dissipation 625mW
Current Rating 1A
Frequency 100MHz
Attribute Value
Base Part Number BC637
Polarity NPN
Element Configuration Single
Power Dissipation 1W
Power - Max 625mW
Gain Bandwidth Product 200MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Max Breakdown Voltage 60V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Height 6.35mm
Length 6.35mm
Width 6.35mm
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Lead Free

BC637 Marking Diagrams

The following figure is BC637 Marking Diagrams.

Marking Diagrams

BC637 Circuit

After you've winded your transformer as shown in the video at the beginning of the article, all you have to do now is connect the components with 5 solder joints according to the schematic. Change the value of the base resistor to suit your needs, as explained in the video.

Circuit

BC637 Alternatives

Part Number Description Manufacturer
BC637TRANSISTORS Transistor Bytesonic Corporation
BC637ZL1TRANSISTORS Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Motorola Semiconductor Products
BC637RLRBTRANSISTORS 500mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 Motorola Mobility LLC
BC637RLTRANSISTORS 500mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 Motorola Mobility LLC
BC637RLRATRANSISTORS 500mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN onsemi
BC637/D26ZTRANSISTORS 1500mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 Texas Instruments
BC637/D27ZTRANSISTORS 1500mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 Texas Instruments

BC637 Applications

■ Linear voltage regulators

■ Low-side switches

■ MOSFET drivers

■ Amplifiers

 

BC637 Package

The following figure is BC637 Package.

Package

BC637 Manufacturer

ON Semiconductor  ( Nasdaq : ON) is a disruptive technology firm that is helping to build a brighter future. It was founded in 1999. With an emphasis on automotive and industrial end-markets, the firm is speeding change in megatrends like as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. Through a highly specialized and unique product range, Onsemi provides intelligent power and sensor solutions that address the world's most pressing concerns and pave the path for a safer, cleaner, and smarter world.

 

Datasheet PDF

Documents

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Frequently Asked Questions

FAQ

What is current gain in NPN transistor?
The current in a bipolar NPN transistor is the ratio of these two currents ( Ic/Ib ), called the DC Current Gain of the device, and is given the symbol of having or nowadays Beta, ( β ).
Why NPN transistor is most widely used?
The flowing of these electrons from emitter to collector forms the current flow in the transistor. Generally, the NPN transistor is the most used type of bipolar transistor because the mobility of electrons is higher than the mobility of holes.
What is the BC637?
An NPN medium power transistor series.
What type of plastic case is the BC637 housed in?
TO-92 plastic case.
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