
TRANS NPN 2A 50V TO226-3
C2655 is a TO-92L or TO-92MOD package BJT transistor. This article mainly covers its datasheet, pinout, equivalent, uses and more details about C2655.

TRANS NPN 2A 50V TO226-3
C2655 is a TO-92L or TO-92MOD package BJT transistor. This article mainly covers its datasheet, pinout, equivalent, uses and more details about C2655.

C2655 Pinout
Symbol

2SC2655 Symbol
Footprint

2SC2655 Footprint
3D Model

2SC2655 3D Model
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• High collector power dissipation: PC = 900 mW
• High-speed switching: tstg = 1.0 μs (typ.)
Switching loads under 2000mA
Motor Controllers
Audio Amplifiers
Audio Amplifier Stages
AM & FM Radio & Transmitters
The equivalent for C2655:
2SC3328, STX715, KTC3209, MJE182 (TO-126 Package), 2SA1162 (TO-126 Package).
C2655 can be utilized in a wide range of general-purpose switching and amplification applications. When used as a switch, it may drive a variety of loads in 2A circuits. Loads can include high-power LEDs, relays, integrated circuits (ICs), and a variety of other electronic components.
It can offer 900mW of maximum audio amplification when used as an audio amplifier, allowing it to be utilized in audio amplifier stages or to drive a small 1-watt loudspeaker directly from a small audio input. It can be utilized as an amplifier in a variety of bell/chimes, mp3 player audio amplification, and a variety of other electrical applications that require audio amplification of 900mW. It can also be used for AM and FM broadcasting and receiving.
Always utilize the C2655 transistor at least 20% below its maximum ratings for long-term performance. Because the transistor's maximum collector current is 2A, do not drive a load greater than 1.6A for safety. The maximum collector-emitter voltage is 50V; for safety, no-load greater than 40V should be driven. The operation and storage temperatures of the transistor should be between -55 and +150 ℃.

C2655 Package
Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
Toshiba Semiconductor and Storage 2SC2655-O,F(J technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SC2655-O,F(J.
| Attribute | Value |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package | TO-92MOD |
| Current-Collector (Ic) (Max) | 2A |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2009 |
| Part Status | Obsolete |
| Attribute | Value |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Power - Max | 900mW |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Frequency - Transition | 100MHz |
Download datasheets and manufacturer documentation for Toshiba Semiconductor and Storage 2SC2655-O,F(J.
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