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Products Found
Compare | Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | RoHS | Factory Lead Time | Lifecycle Status | Mount | Mounting Type | Package / Case | Number of Pins | Transistor Element Material | Number of Elements | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Resistance | Terminal Finish | Additional Feature | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Fall Time (Typ) | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | FET Feature | Height | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
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Mfr. Part #APTM50H14FT3GMOST Part #523-367-APTM50H14FT3G | Microsemi Corporation |
MOSFET 4N-CH 500V 26A SP3
| Min.:1 Mult.:1 | 16 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP3 | 32 | SILICON | 4 | 50 ns | -40°C~150°C TJ | Bulk | 2006 | - | e1 | yes | Active | 1 (Unlimited) | 25 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 208W | UPPER | UNSPECIFIED | - | - | 25 | R-XUFM-X25 | - | - | 1 | Single | ENHANCEMENT MODE | 208W | ISOLATED | 10 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 168m Ω @ 13A, 10V | 5V @ 1mA | 3259pF @ 25V | 72nC @ 10V | 17ns | 500V | 41 ns | 26A | 30V | - | - | - | 500V | - | METAL-OXIDE SEMICONDUCTOR | Standard | 11.5mm | 73.4mm | 40.8mm | No | RoHS Compliant | - | |||||
APTM50H14FT3G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTM50HM65FT3GMOST Part #523-367-APTM50HM65FT3G | Microsemi Corporation |
MOSFET 4N-CH 500V 51A SP3
| Min.:1 Mult.:1 | 16 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP3 | 3 | SILICON | 4 | 75 ns | -40°C~150°C TJ | Bulk | 2006 | - | e1 | yes | Active | 1 (Unlimited) | 25 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 390W | UPPER | UNSPECIFIED | - | - | 25 | R-XUFM-X25 | - | COMPLEX | - | - | ENHANCEMENT MODE | 390W | ISOLATED | 21 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 78m Ω @ 25.5A, 10V | 5V @ 2.5mA | 7000pF @ 25V | 140nC @ 10V | 38ns | 500V | 93 ns | 51A | 30V | 0.078Ohm | - | - | 500V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | Lead Free | |||||
APTM50HM65FT3G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTC60DSKM24T3GMOST Part #523-367-APTC60DSKM24T3G | Microsemi Corporation |
Trans MOSFET N-CH 600V 95A 25-Pin Case SP-3
| Min.:1 Mult.:1 | 16 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP3 | 3 | - | 2 | - | -40°C~150°C TJ | Tray | 2012 | CoolMOS™ | - | - | Active | 1 (Unlimited) | - | EAR99 | - | - | - | 462W | - | - | NOT SPECIFIED | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | 2 N Channel (Dual Buck Chopper) | - | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 14400pF @ 25V | 300nC @ 10V | - | 600V | - | 95A | 20V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Super Junction | - | - | - | - | RoHS Compliant | Lead Free | |||||
APTC60DSKM24T3G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTM10HM19FT3GMOST Part #523-367-APTM10HM19FT3G | Microsemi Corporation |
MOSFET 4N-CH 100V 70A SP3
| Min.:1 Mult.:1 | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP3 | 3 | SILICON | 4 | 95 ns | -40°C~150°C TJ | Bulk | 2006 | - | e1 | yes | Active | 1 (Unlimited) | 25 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 208W | UPPER | UNSPECIFIED | - | - | 25 | R-XUFM-X25 | - | - | 1 | Single | ENHANCEMENT MODE | 208W | ISOLATED | 35 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 21m Ω @ 35A, 10V | 4V @ 1mA | 5100pF @ 25V | 200nC @ 10V | 70ns | 100V | 125 ns | 70A | 30V | - | 100V | - | - | - | METAL-OXIDE SEMICONDUCTOR | Standard | 11.5mm | 73.4mm | 40.8mm | No | RoHS Compliant | - | |||||
APTM10HM19FT3G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTC60HM35T3GMOST Part #523-367-APTC60HM35T3G | Microsemi Corporation |
MOSFET 4N-CH 600V 72A SP3
| Min.:1 Mult.:1 | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP3 | 3 | SILICON | 4 | 283 ns | -40°C~150°C TJ | Bulk | 2012 | - | e1 | yes | Active | 1 (Unlimited) | 25 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 416W | UPPER | UNSPECIFIED | - | - | 25 | R-XUFM-X25 | - | - | 1 | Single | ENHANCEMENT MODE | 416W | ISOLATED | 21 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 35m Ω @ 72A, 10V | 3.9V @ 5.4mA | 14000pF @ 25V | 518nC @ 10V | 30ns | 600V | 84 ns | 72A | 20V | - | 600V | 200A | - | - | METAL-OXIDE SEMICONDUCTOR | Standard | 11.5mm | 73.4mm | 40.8mm | No | RoHS Compliant | - | |||||
APTC60HM35T3G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTM100A13SGMOST Part #523-367-APTM100A13SG | Microsemi Corporation |
MOSFET 2N-CH 1000V 65A SP6
| Min.:1 Mult.:1 | 16 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP6 | 6 | SILICON | 2 | 50 ns | -40°C~150°C TJ | Bulk | 1999 | - | e1 | yes | Active | 1 (Unlimited) | 7 | EAR99 | 156mOhm | TIN SILVER COPPER | AVALANCHE RATED | 1.25kW | UPPER | UNSPECIFIED | - | - | 7 | R-XUFM-X7 | - | - | 1 | Single | ENHANCEMENT MODE | 1.25kW | ISOLATED | 9 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 156m Ω @ 32.5A, 10V | 5V @ 6mA | 15200pF @ 25V | 562nC @ 10V | 9ns | 1000V 1kV | 24 ns | 65A | 30V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Standard | 21.9mm | 108mm | 62mm | No | RoHS Compliant | Lead Free | |||||
APTM100A13SG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTM10HM05FGMOST Part #523-367-APTM10HM05FG | Microsemi Corporation |
MOSFET 4N-CH 100V 278A SP6
| Min.:1 Mult.:1 | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP6 | 12 | SILICON | 4 | 280 ns | -40°C~150°C TJ | Bulk | 2012 | - | e1 | yes | Active | 1 (Unlimited) | 12 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 780W | UPPER | UNSPECIFIED | - | - | 12 | - | - | - | - | - | ENHANCEMENT MODE | 780W | ISOLATED | 80 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 5m Ω @ 125A, 10V | 4V @ 5mA | 20000pF @ 25V | 700nC @ 10V | 165ns | 100V | 135 ns | 278A | 30V | 0.005Ohm | - | 1100A | 100V | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | |||||
APTM10HM05FG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTM60H23FT1GMOST Part #523-367-APTM60H23FT1G | Microsemi Corporation |
Trans MOSFET N-CH 600V 20A 12-Pin Case SP-1
| Min.:1 Mult.:1 | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP1 | 1 | SILICON | 4 | 115 ns | -40°C~150°C TJ | Bulk | 2007 | - | - | - | Active | 1 (Unlimited) | 12 | EAR99 | - | - | AVALANCHE RATED | 208W | UPPER | UNSPECIFIED | - | - | 12 | - | - | COMPLEX | - | - | ENHANCEMENT MODE | 208W | ISOLATED | 37 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 276m Ω @ 17A, 10V | 5V @ 1mA | 5316pF @ 25V | 165nC @ 10V | 43ns | 600V | 34 ns | 20A | 30V | 0.23Ohm | - | - | 600V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | |||||
APTM60H23FT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTM50H15FT1GMOST Part #523-367-APTM50H15FT1G | Microsemi Corporation |
Trans MOSFET N-CH 500V 25A 12-Pin Case SP-1
| Min.:1 Mult.:1 | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP1 | 1 | SILICON | 4 | 80 ns | -40°C~150°C TJ | Bulk | 2007 | - | - | - | Active | 1 (Unlimited) | 12 | EAR99 | - | - | AVALANCHE RATED | 208W | UPPER | UNSPECIFIED | - | - | 12 | - | - | COMPLEX | - | - | ENHANCEMENT MODE | 208W | ISOLATED | 29 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 180m Ω @ 21A, 10V | 5V @ 1mA | 5448pF @ 25V | 170nC @ 10V | 35ns | 500V | 26 ns | 25A | 30V | - | - | - | 500V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | |||||
APTM50H15FT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTC60AM35SCTGMOST Part #523-367-APTC60AM35SCTG | Microsemi Corporation |
MOSFET 2N-CH 600V 72A SP4
| Min.:1 Mult.:1 | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Chassis Mount | SP4 | 4 | SILICON | 2 | 283 ns | -40°C~150°C TJ | Bulk | - | - | e1 | yes | Active | 1 (Unlimited) | 10 | EAR99 | - | TIN SILVER COPPER | - | 416W | UPPER | UNSPECIFIED | - | - | 10 | R-XUFM-X10 | - | - | - | - | ENHANCEMENT MODE | 416W | ISOLATED | 21 ns | - | 2 N-Channel (Half Bridge) | SWITCHING | 35m Ω @ 36A, 10V | 3.9V @ 2mA | 14000pF @ 25V | 518nC @ 10V | 30ns | 600V | 84 ns | 72A | 30V | 0.035Ohm | - | - | 600V | 1800 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | |||||
APTC60AM35SCTG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTM120A15FGMOST Part #523-367-APTM120A15FG | Microsemi Corporation |
MOSFET 2N-CH 1200V 60A SP6
| Min.:1 Mult.:1 | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP6 | 6 | SILICON | 2 | 160 ns | -40°C~150°C TJ | Bulk | - | - | e1 | yes | Active | 1 (Unlimited) | 7 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 1.25kW | UPPER | UNSPECIFIED | - | - | 7 | R-XUFM-X7 | - | - | - | - | ENHANCEMENT MODE | 1.25kW | ISOLATED | 20 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 175m Ω @ 30A, 10V | 5V @ 10mA | 20600pF @ 25V | 748nC @ 10V | 15ns | 1200V 1.2kV | 45 ns | 60A | 30V | 0.175Ohm | - | - | - | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | |||||
APTM120A15FG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTM20AM04FGMOST Part #523-367-APTM20AM04FG | Microsemi Corporation |
MOSFET 2N-CH 200V 372A SP6
| Min.:1 Mult.:1 | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP6 | 6 | SILICON | 2 | 88 ns | -40°C~150°C TJ | Bulk | 2006 | - | e1 | yes | Active | 1 (Unlimited) | 7 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 1.25kW | UPPER | UNSPECIFIED | - | - | 7 | R-XUFM-X7 | - | - | 1 | Single | ENHANCEMENT MODE | 1.25kW | ISOLATED | 32 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 5m Ω @ 186A, 10V | 5V @ 10mA | 28900pF @ 25V | 560nC @ 10V | 64ns | 200V | 116 ns | 372A | 30V | 0.005Ohm | - | - | - | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 21.9mm | 108mm | 62mm | No | RoHS Compliant | Lead Free | |||||
APTM20AM04FG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTM50HM75STGMOST Part #523-367-APTM50HM75STG | Microsemi Corporation |
MOSFET 4N-CH 500V 46A SP4
| Min.:1 Mult.:1 | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP4 | 4 | SILICON | 4 | 87 ns | -40°C~150°C TJ | Bulk | 1999 | - | e1 | yes | Active | 1 (Unlimited) | 14 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 357W | UPPER | UNSPECIFIED | - | - | 14 | - | - | - | - | - | ENHANCEMENT MODE | 357W | ISOLATED | 18 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 90m Ω @ 23A, 10V | 5V @ 2.5mA | 5600pF @ 25V | 123nC @ 10V | 35ns | 500V | 77 ns | 46A | 30V | 0.09Ohm | - | - | 500V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | |||||
APTM50HM75STG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTM10AM02FGMOST Part #523-367-APTM10AM02FG | Microsemi Corporation |
MOSFET 2N-CH 100V 495A SP6
| Min.:1 Mult.:1 | 16 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP6 | 6 | SILICON | 2 | 500 ns | -40°C~150°C TJ | Bulk | 2012 | - | e1 | yes | Active | 1 (Unlimited) | 7 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 1.25kW | UPPER | UNSPECIFIED | - | - | 7 | R-XUFM-X7 | - | - | - | - | ENHANCEMENT MODE | 1.25kW | ISOLATED | 160 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 2.5m Ω @ 200A, 10V | 4V @ 10mA | 40000pF @ 25V | 1360nC @ 10V | 240ns | 100V | 160 ns | 495A | 30V | - | - | 1900A | 100V | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | |||||
APTM10AM02FG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTC60TDUM35PGMOST Part #523-367-APTC60TDUM35PG | Microsemi Corporation |
MOSFET 6N-CH 600V 72A SP6-P
| Min.:1 Mult.:1 | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Chassis Mount | SP6 | 6 | SILICON | 6 | 283 ns | -40°C~150°C TJ | Bulk | 2006 | - | e1 | yes | Active | 1 (Unlimited) | 21 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 416W | UPPER | UNSPECIFIED | - | - | 21 | R-XUFM-X21 | - | 3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | 416W | ISOLATED | 21 ns | - | 6 N-Channel (3-Phase Bridge) | SWITCHING | 35m Ω @ 72A, 10V | 3.9V @ 5.4mA | 14000pF @ 25V | 518nC @ 10V | 30ns | 600V | 84 ns | 72A | 20V | 0.035Ohm | - | 200A | - | 1800 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | |||||
APTC60TDUM35PG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTC80AM75SCGMOST Part #523-367-APTC80AM75SCG | Microsemi Corporation |
MOSFET 2N-CH 800V 56A SP6
| Min.:1 Mult.:1 | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Chassis Mount | SP6 | 6 | SILICON | 2 | 83 ns | -40°C~150°C TJ | Bulk | 1997 | - | e1 | yes | Active | 1 (Unlimited) | 7 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 568W | UPPER | UNSPECIFIED | - | - | 7 | R-XUFM-X7 | - | - | - | - | ENHANCEMENT MODE | 568W | ISOLATED | 10 ns | - | 2 N-Channel (Half Bridge) | SWITCHING | 75m Ω @ 28A, 10V | 3.9V @ 4mA | 9015pF @ 25V | 364nC @ 10V | 13ns | 800V | 35 ns | 56A | 30V | 0.075Ohm | - | - | 800V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | |||||
APTC80AM75SCG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTM100AM90FGMOST Part #523-367-APTM100AM90FG | Microsemi Corporation |
MOSFET 2N-CH 1000V 78A SP6
| 300
In Stock
| Min.:1 Mult.:1 | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP6 | 6 | SILICON | 2 | 155 ns | -40°C~150°C TJ | Bulk | 2006 | - | e1 | yes | Active | 1 (Unlimited) | 7 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 1.25kW | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 7 | R-XUFM-X7 | Not Qualified | - | - | - | ENHANCEMENT MODE | 1.25kW | ISOLATED | 18 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 105m Ω @ 39A, 10V | 5V @ 10mA | 20700pF @ 25V | 744nC @ 10V | 12ns | 1000V 1kV | 40 ns | 78A | 30V | 0.105Ohm | - | - | 1000V | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | - | RoHS Compliant | Lead Free | ||||
APTM100AM90FG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTM50AM38STGMOST Part #523-367-APTM50AM38STG | Microsemi Corporation |
MOSFET 2N-CH 500V 90A SP4
| Min.:1 Mult.:1 | 16 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP4 | 4 | SILICON | 2 | 87 ns | -40°C~150°C TJ | Bulk | - | - | e1 | yes | Active | 1 (Unlimited) | 10 | EAR99 | - | TIN SILVER COPPER | AVALANCHE ENERGY RATED | 694W | UPPER | UNSPECIFIED | - | - | 10 | R-XUFM-X10 | - | - | - | - | ENHANCEMENT MODE | 694W | ISOLATED | 18 ns | - | 2 N-Channel (Half Bridge) | SWITCHING | 45m Ω @ 45A, 10V | 5V @ 5mA | 11200pF @ 25V | 246nC @ 10V | 35ns | 500V | 77 ns | 90A | 30V | - | - | 360A | 500V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | |||||
APTM50AM38STG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTM50AM24SGMOST Part #523-367-APTM50AM24SG | Microsemi Corporation |
MOSFET 2N-CH 500V 150A SP6
| Min.:1 Mult.:1 | 16 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP6 | 7 | SILICON | 2 | 50 ns | -40°C~150°C TJ | Bulk | 1999 | - | e1 | yes | Active | 1 (Unlimited) | 7 | EAR99 | - | TIN SILVER COPPER | - | 1.25kW | UPPER | UNSPECIFIED | - | - | - | - | - | - | - | - | ENHANCEMENT MODE | 1.25kW | ISOLATED | 10 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 28m Ω @ 75A, 10V | 5V @ 6mA | 19600pF @ 25V | 434nC @ 10V | 17ns | 500V | 41 ns | 150A | 30V | - | - | 600A | 500V | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | Lead Free | |||||
APTM50AM24SG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. Part #APTM120H29FGMOST Part #523-367-APTM120H29FG | Microsemi Corporation |
MOSFET 4N-CH 1200V 34A SP6
| Min.:1 Mult.:1 | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP6 | 6 | SILICON | 4 | 160 ns | -40°C~150°C TJ | Bulk | 2012 | POWER MOS 7® | e1 | yes | Active | 1 (Unlimited) | 12 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 780W | UPPER | UNSPECIFIED | - | - | 12 | R-XUFM-X12 | - | - | - | - | ENHANCEMENT MODE | 780W | ISOLATED | 20 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 348m Ω @ 17A, 10V | 5V @ 5mA | 10300pF @ 25V | 374nC @ 10V | 15ns | 1200V 1.2kV | 45 ns | 34A | 30V | - | - | - | 1200V | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | |||||
APTM120H29FG |
Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: APTM50H14FT3G,APTM50HM65FT3G,APTC60DSKM24T3G,APTM10HM19FT3G,APTC60HM35T3G.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - FETs, MOSFETs - Arrays has 240 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the MOST.
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