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Datasheet
| Mfr. Part #AGR26125EFMOST Part #3044-368-AGR26125EF | Advanced |
RF MOSFET Transistors 2.5-2.7GHz 20Watt Gain 11.5dB
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | 2 | SILICON | - | - | Advanced Semiconductor, Inc. | - | - | 10 | - | BROADCOM LTD | Advanced Semiconductor, Inc. | AGR26125EF | - | - | - | - | 1 | - | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | 30 | 5.25 | Details | - | - | - | - | - | - | - | Tray | - | - | - | e0 | - | - | - | EAR99 | - | - | - | - | TIN LEAD | - | - | - | HIGH RELIABILITY | - | MOSFETs | Si | DUAL | - | FLAT | 225 | compliant | - | R-CDFM-F2 | Not Qualified | - | - | - | - | - | SINGLE | - | ENHANCEMENT MODE | - | SOURCE | - | - | N-CHANNEL | RF MOSFET Transistors | - | - | 65 V | METAL-OXIDE SEMICONDUCTOR | - | - | ULTRA HIGH FREQUENCY BAND | - | RF MOSFET Transistors | - | - | - | - | - | - | - | ||||
| AGR26125EF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #AGR21060EFMOST Part #3044-368-AGR21060EF | Advanced |
RF MOSFET Transistors 2.11-2.17GHz13.5Watt Gain 14.5dB
| Min.:1 Mult.:1 | - | - | 0603 (1608 Metric) | YES | 0603 | - | - | 2 | SILICON | - | RS73G1JRT | Advanced Semiconductor, Inc. | - | - | 10 | - | BROADCOM LTD | Advanced Semiconductor, Inc. | AGR21060EF | - | KOA Speer Electronics, Inc. | - | - | 1 | 200 °C | Tape & Reel (TR) | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Active | - | Active | - | NOT SPECIFIED | 5.25 | Details | - | - | - | - | - | - | -55°C ~ 155°C | Tray | RS73-RT | 0.063 L x 0.031 W (1.60mm x 0.80mm) | ±0.25% | e0 | - | 2 | - | EAR99 | ±50ppm/°C | - | 43.2 Ohms | - | TIN LEAD | Thick Film | - | 0.2W, 1/5W | HIGH RELIABILITY | - | MOSFETs | Si | DUAL | - | FLAT | NOT SPECIFIED | compliant | - | R-CDFM-F2 | Not Qualified | - | - | - | - | - | SINGLE | - | ENHANCEMENT MODE | - | - | - | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | - | - | 65 V | METAL-OXIDE SEMICONDUCTOR | 175 W | - | S BAND | Automotive AEC-Q200 | RF MOSFET Transistors | - | 0.022 (0.55mm) | - | - | - | - | AEC-Q200 | ||||
| AGR21060EF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #AGR09090EFMOST Part #3044-368-AGR09090EF | Advanced |
RF MOSFET Transistors 865-960MHz 105Watt Gain 17.8dB
| Min.:1 Mult.:1 | - | Surface Mount, MLCC | 1111 (2828 Metric) | YES | - | - | - | 2 | SILICON | - | - | Advanced Semiconductor, Inc. | - | 8.5 A | 10 | - | BROADCOM LTD | Advanced Semiconductor, Inc. | AGR09090EF | - | American Technical Ceramics | - | - | 1 | 200 °C | Tape & Reel (TR);Cut Tape (CT);Digi-Reel®; | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Active | - | Active | - | 30 | 5.31 | Details | - | - | - | - | - | 300V | -55°C ~ 125°C | Tray | Porcelain Superchip® ATC 100B | 0.110 L x 0.110 W (2.79mm x 2.79mm) | ±5% | e0 | - | - | - | EAR99 | P90 | - | - | - | TIN LEAD | - | RF, Microwave, High Frequency, Bypass, Decoupling | - | HIGH RELIABILITY | 180 pF | MOSFETs | Si | DUAL | - | FLAT | 225 | compliant | - | R-CDFM-F2 | Not Qualified | - | - | - | - | - | SINGLE | - | ENHANCEMENT MODE | - | SOURCE | - | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | - | 8.5 A | 65 V | METAL-OXIDE SEMICONDUCTOR | 219 W | - | ULTRA HIGH FREQUENCY BAND | High Q, Low Loss, Low ESL | RF MOSFET Transistors | - | - | - | - | 0.102 (2.59mm) | - | - | ||||
| AGR09090EF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #AGR19180EFMOST Part #3044-368-AGR19180EF | Advanced |
RF MOSFET Transistors 1.93-1.99GHz 38Watt Gain 14.5dB
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | 4 | SILICON | - | - | Advanced Semiconductor, Inc. | - | - | 10 | - | BROADCOM LTD | Advanced Semiconductor, Inc. | AGR19180EF | - | - | - | - | 2 | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | 30 | 5.25 | Details | - | - | - | - | - | - | - | Tray | - | - | - | e0 | - | - | - | EAR99 | - | RF Power MOSFET | - | - | TIN LEAD | - | - | - | HIGH RELIABILITY | - | MOSFETs | Si | DUAL | - | FLAT | 225 | compliant | - | R-CDFM-F4 | Not Qualified | - | - | - | - | - | COMMON SOURCE, 2 ELEMENTS | - | ENHANCEMENT MODE | - | SOURCE | - | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | - | - | 65 V | METAL-OXIDE SEMICONDUCTOR | 500 W | - | L BAND | - | RF MOSFET Transistors | - | - | - | - | - | - | - | ||||
| AGR19180EF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #AGR09045EFMOST Part #3044-368-AGR09045EF | Advanced |
RF MOSFET Transistors RF Transistor
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | 2 | SILICON | - | - | Advanced Semiconductor, Inc. | - | 4.25 A | - | 4.25 A | AVAGO TECHNOLOGIES INC | Advanced Semiconductor, Inc. | AGR09045EF | + 200 C | - | - 65 C | - | 1 | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Active | 117 W | - | - | 30 | 5.25 | Details | N-Channel | - | 65 V | 15 V | 4.8 V | - | - | Tray | - | - | - | e0 | - | - | - | EAR99 | - | RF Power MOSFET | - | - | TIN LEAD | - | - | - | HIGH RELIABILITY | - | MOSFETs | Si | DUAL | - | FLAT | 225 | compliant | - | R-CDFM-F2 | Not Qualified | 895 MHz | - | - | - | - | Single | - | ENHANCEMENT MODE | - | SOURCE | - | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | - | - | 65 V | METAL-OXIDE SEMICONDUCTOR | 125 W | - | ULTRA HIGH FREQUENCY BAND | - | RF MOSFET Transistors | - | - | - | - | - | - | - | ||||
| AGR09045EF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #AGR18125EFMOST Part #3044-368-AGR18125EF | Advanced |
RF MOSFET Transistors 1.8-1.88GHz 125Watt Gain 13.5dB
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | 2 | SILICON | - | - | Advanced Semiconductor, Inc. | - | - | 10 | - | AVAGO TECHNOLOGIES INC | Advanced Semiconductor, Inc. | AGR18125EF | - | - | - | - | 1 | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | 30 | 5.25 | Details | - | - | - | - | - | - | - | Tray | - | - | - | e0 | - | - | - | EAR99 | - | - | - | - | TIN LEAD | - | - | - | HIGH RELIABILITY | - | MOSFETs | Si | DUAL | - | FLAT | 225 | compliant | - | R-CDFM-F2 | Not Qualified | - | - | - | - | - | SINGLE | - | ENHANCEMENT MODE | - | SOURCE | - | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | - | - | 65 V | METAL-OXIDE SEMICONDUCTOR | 350 W | - | L BAND | - | RF MOSFET Transistors | - | - | - | - | - | - | - | ||||
| AGR18125EF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #MRF141GMOST Part #3044-368-MRF141G | Advanced |
RF MOSFET Transistors RF Transistor
| Min.:1 Mult.:1 | - | - | Axial | - | Axial | - | - | - | - | - | - | Advanced Semiconductor, Inc. | - | - | - | - | - | Advanced Semiconductor, Inc. | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | - | - | - | - | -65°C ~ 175°C | Bulk | Military, MIL-PRF-55182/01, RNC55 | 0.094 Dia x 0.250 L (2.39mm x 6.35mm) | ±0.5% | - | Active | 2 | - | - | ±25ppm/°C | - | 1.2 kOhms | - | - | Metal Film | - | 0.125W, 1/8W | - | - | MOSFETs | Si | - | - | - | - | - | - | - | - | - | - | - | S (0.001%) | - | - | - | - | - | - | - | - | - | RF MOSFET Transistors | - | - | - | - | - | - | - | Military, Moisture Resistant, Weldable | RF MOSFET Transistors | - | -- | - | - | - | - | - | ||||
| MRF141G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #BLF861AMOST Part #3044-368-BLF861A | Advanced |
RF MOSFET Transistors RF Transistor
| Min.:1 Mult.:1 | - | - | Axial | - | Axial | - | - | - | - | - | - | Advanced Semiconductor, Inc. | - | - | 1 | 18 A | - | Advanced Semiconductor, Inc. | - | + 200 C | - | - 65 C | Flange Mount | - | - | - | - | - | - | - | - | - | - | 160 mOhms | - | - | Details | N-Channel | 0.619058 oz | 65 V | - | - | - | -55°C ~ 250°C | Bulk | Military, MIL-PRF-39007, RWR80S | 0.094 Dia x 0.406 L (2.39mm x 10.31mm) | ±1% | - | Active | 2 | - | - | ±20ppm/°C | RF Power MOSFET | 330 Ohms | - | - | Wirewound | - | 2W | - | - | MOSFETs | Si | - | - | - | - | - | - | - | - | 860 MHz | - | - | R (0.01%) | - | - | - | - | - | - | 150 W | - | - | RF MOSFET Transistors | 14.5 dB | - | - | - | - | - | - | Military, Moisture Resistant | RF MOSFET Transistors | - | -- | - | - | - | - | - | ||||
| BLF861A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #AGR21090EFMOST Part #3044-368-AGR21090EF | Advanced |
RF MOSFET Transistors 2.11-2.17GHz 19Watt Gain 14.5dB
| Min.:1 Mult.:1 | - | - | Axial | YES | Axial | - | - | 2 | SILICON | - | - | Advanced Semiconductor, Inc. | - | - | 10 | - | AVAGO TECHNOLOGIES INC | Advanced Semiconductor, Inc. | AGR21090EF | - | - | - | - | 1 | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | 30 | 5.25 | Details | - | - | - | - | - | - | -65°C ~ 175°C | Bulk | Military, MIL-PRF-55182/01, RNC55 | 0.094 Dia x 0.250 L (2.39mm x 6.35mm) | ±0.5% | e0 | Active | 2 | - | EAR99 | ±25ppm/°C | - | 124 kOhms | - | TIN LEAD | Metal Film | - | 0.125W, 1/8W | HIGH RELIABILITY | - | MOSFETs | Si | DUAL | - | FLAT | 225 | compliant | - | R-CDFM-F2 | Not Qualified | - | - | - | S (0.001%) | - | SINGLE | - | ENHANCEMENT MODE | - | SOURCE | - | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | - | - | 65 V | METAL-OXIDE SEMICONDUCTOR | 250 W | - | S BAND | Military, Moisture Resistant, Weldable | RF MOSFET Transistors | - | -- | - | - | - | - | - | ||||
| AGR21090EF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #MRF151GMOST Part #3044-368-MRF151G | Advanced |
RF MOSFET Transistors RF Transistor
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | Advanced Semiconductor, Inc. | - | - | 1 | 40 A | - | Advanced Semiconductor, Inc. | - | + 200 C | - | - 65 C | SMD/SMT | - | - | - | - | - | - | - | - | - | - | 5 mOhms | - | - | Details | Dual N-Channel | 0.642339 oz | 125 V | - | - | - | - | Tray | - | - | - | - | - | - | - | - | - | RF Power MOSFET | - | - | - | - | - | - | - | - | MOSFETs | Si | - | - | - | - | - | - | - | - | 175 MHz | - | - | - | - | - | - | - | - | - | 300 W | - | - | RF MOSFET Transistors | 16 dB | - | - | - | - | - | - | - | RF MOSFET Transistors | - | - | - | - | - | - | - | ||||
| MRF151G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #MRF172MOST Part #3044-368-MRF172 | Advanced |
RF MOSFET Transistors RF Transistor
| Min.:1 Mult.:1 | - | - | 211-07-3 | NO | - | - | - | 4 | SILICON | - | - | Advanced Semiconductor, Inc. | - | 9 A | - | 9 A | ASI SEMICONDUCTOR INC | Advanced Semiconductor, Inc. | MRF172 | + 200 C | - | - 65 C | SMD/SMT | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, O-CRFM-F4 | ROUND | FLANGE MOUNT | Active | 220 W | - | 1.5 mOhms | - | 4.61 | Details | N-Channel | - | 65 V | 40 V | 5 V | - | - | Tray | - | - | - | - | - | - | - | EAR99 | - | RF Power MOSFET | - | - | - | - | - | - | - | - | MOSFETs | Si | RADIAL | - | FLAT | - | unknown | 4 | O-CRFM-F4 | Not Qualified | 200 MHz | - | - | - | - | Single | - | ENHANCEMENT MODE | - | - | 80 W | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | 10 dB | 9 A | 65 V | METAL-OXIDE SEMICONDUCTOR | 220 W | - | VERY HIGH FREQUENCY BAND | - | RF MOSFET Transistors | - | - | - | - | - | - | - | ||||
| MRF172 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #MRF171MOST Part #3044-368-MRF171 | Advanced |
RF MOSFET Transistors RF Transistor
| Min.:1 Mult.:1 | - | - | 211-07-3 | - | - | - | 3.175147 kg | - | - | - | - | Advanced Semiconductor, Inc. | - | - | 1 | 4.5 A | - | Advanced Semiconductor, Inc. | - | + 200 C | - | - 65 C | SMD/SMT | - | - | - | - | - | - | - | - | 115 W | - | 0.7 mOhms | - | - | Non-Compliant | N-Channel | 0.297389 oz | 65 V | 40 V | 6 V | - | - | Tray | - | - | - | - | - | - | - | - | - | RF Power MOSFET | - | - | - | - | - | - | - | - | MOSFETs | Si | - | - | - | - | - | - | - | - | 200 MHz | - | - | - | - | Single | - | - | - | - | 45 W | - | - | RF MOSFET Transistors | 15 dB | - | - | - | - | - | - | - | RF MOSFET Transistors | 107.95 mm | - | 476.25 mm | 463.55 mm | - | - | - | ||||
| MRF171 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #AGR09030EFMOST Part #3044-368-AGR09030EF | Advanced |
RF MOSFET Transistors RF Transistor
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | 2 | SILICON | - | - | Advanced Semiconductor, Inc. | - | 4.25 A | - | 4.25 A | BROADCOM LTD | Advanced Semiconductor, Inc. | AGR09030EF | + 200 C | - | - 65 C | - | 1 | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Active | 80 W | - | - | 30 | 5.2 | Details | N-Channel | - | 65 V | 15 V | 5 V | - | - | Tray | - | - | - | e0 | - | - | - | EAR99 | - | RF Power MOSFET | - | - | TIN LEAD | - | - | - | HIGH RELIABILITY | - | MOSFETs | Si | DUAL | - | FLAT | 225 | compliant | - | R-CDFM-F2 | Not Qualified | 895 MHz | - | - | - | - | Single | - | ENHANCEMENT MODE | - | SOURCE | - | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | - | - | 65 V | METAL-OXIDE SEMICONDUCTOR | - | - | ULTRA HIGH FREQUENCY BAND | - | RF MOSFET Transistors | - | - | - | - | - | - | - | ||||
| AGR09030EF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #BLF378MOST Part #3044-368-BLF378 | Advanced |
RF MOSFET Transistors RF Transistor
| Min.:1 Mult.:1 | Gold | - | SOT-262A | - | - | Polyester | - | - | - | Vertical | - | Advanced Semiconductor, Inc. | Bronze | - | 1 | 18 A | - | Advanced Semiconductor, Inc. | - | + 200 C | - | - 65 C | SMD/SMT | - | - | - | - | - | - | - | - | 500 W | - | 300 mOhms | - | - | Non-Compliant | N-Channel | 0.001058 oz | 125 V | 20 V | 7 V | - | - | Tray | - | - | - | - | - | - | Solder | - | - | - | - | 32 | - | - | - | - | - | - | MOSFETs | Si | - | Vertical | - | - | - | - | - | - | 225 MHz | Green | 3.1 mm | - | - | Single | Compliant | - | - | - | - | - | - | RF MOSFET Transistors | - | - | - | - | - | Yes | - | - | RF MOSFET Transistors | - | - | - | - | - | UL94 V-0 | - | ||||
| BLF378 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #MRF151GCMOST Part #3044-368-MRF151GC | Advanced |
RF MOSFET Transistors RF Transistor
| Min.:1 Mult.:1 | - | - | SOT-262A | - | - | - | - | - | - | - | - | Advanced Semiconductor, Inc. | - | - | - | 40 A | - | Advanced Semiconductor, Inc. | - | + 200 C | - | - 65 C | SMD/SMT | - | - | - | - | - | - | - | - | 500 W | - | - | - | - | Details | N-Channel | 0.001058 oz | 125 V | 40 V | 5 V | - | - | Tray | - | - | - | - | - | - | - | - | - | RF Power MOSFET | - | - | - | - | - | - | - | - | MOSFETs | Si | - | - | - | - | - | - | - | - | 175 MHz | - | - | - | - | Dual | - | - | - | - | - | - | - | RF MOSFET Transistors | - | - | - | - | - | - | - | - | RF MOSFET Transistors | - | - | - | - | - | - | - | ||||
| MRF151GC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #AGR19060EFMOST Part #3044-368-AGR19060EF | Advanced |
RF MOSFET Transistors 1.93-1.99GHz 12Watt Gain 15.5dB
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | 2 | SILICON | - | - | Advanced Semiconductor, Inc. | - | - | 10 | - | AVAGO TECHNOLOGIES INC | Advanced Semiconductor, Inc. | AGR19060EF | - | - | - | - | 1 | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | 30 | 5.25 | Details | - | - | - | - | - | - | - | Tray | - | - | - | e0 | - | - | - | EAR99 | - | - | - | - | TIN LEAD | - | - | - | HIGH RELIABILITY | - | MOSFETs | Si | DUAL | - | FLAT | 225 | compliant | - | R-CDFM-F2 | Not Qualified | - | - | - | - | - | SINGLE | - | ENHANCEMENT MODE | - | - | - | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | - | - | 65 V | METAL-OXIDE SEMICONDUCTOR | 175 W | - | L BAND | - | RF MOSFET Transistors | - | - | - | - | - | - | - | ||||
| AGR19060EF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #AGR21180EFMOST Part #3044-368-AGR21180EF | Advanced |
RF MOSFET Transistors 2.11-2.17GHz 38Watt Gain 14dB
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | 4 | SILICON | - | - | Advanced Semiconductor, Inc. | - | - | 10 | - | AVAGO TECHNOLOGIES INC | Advanced Semiconductor, Inc. | AGR21180EF | - | - | - | - | 1 | 150 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | 30 | 5.25 | Details | - | - | - | - | - | - | - | Tray | - | - | - | e0 | - | - | - | EAR99 | - | - | - | - | TIN LEAD | - | - | - | HIGH RELIABILITY | - | MOSFETs | Si | DUAL | - | FLAT | 225 | compliant | - | R-CDFM-F4 | Not Qualified | - | - | - | - | - | SINGLE | - | ENHANCEMENT MODE | - | SOURCE | - | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | - | - | 65 V | METAL-OXIDE SEMICONDUCTOR | 500 W | - | S BAND | - | RF MOSFET Transistors | - | - | - | - | - | - | - | ||||
| AGR21180EF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #MRF426MOST Part #3044-368-MRF426 | Advanced |
RF MOSFET Transistors RF Transistor
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | Advanced Semiconductor, Inc. | - | - | - | - | - | Advanced Semiconductor, Inc. | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | 0.385974 oz | - | - | - | - | - | Tray | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MOSFETs | Si | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | RF MOSFET Transistors | - | - | - | - | - | - | - | - | RF MOSFET Transistors | - | - | - | - | - | - | - | ||||
| MRF426 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #AGR26180EFMOST Part #3044-368-AGR26180EF | Advanced |
RF MOSFET Transistors 2.535-2.655GHz27Watt Gain 12.5dB
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | 4 | SILICON | - | - | - | - | - | - | - | BROADCOM LTD | Broadcom Limited | AGR26180EF | - | - | - | - | 1 | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | 30 | 5.31 | - | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | - | - | - | TIN LEAD | - | - | - | HIGH RELIABILITY | - | FET General Purpose Power | - | DUAL | - | FLAT | 225 | compliant | - | R-CDFM-F4 | Not Qualified | - | - | - | - | - | SINGLE | - | ENHANCEMENT MODE | - | SOURCE | - | - | N-CHANNEL | - | - | - | 65 V | METAL-OXIDE SEMICONDUCTOR | 500 W | - | ULTRA HIGH FREQUENCY BAND | - | - | - | - | - | - | - | - | - | ||||
| AGR26180EF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #SD2942MOST Part #3044-368-SD2942 | Advanced |
RF MOSFET Transistors RF Transistor
| Min.:1 Mult.:1 | - | - | M244 | - | - | - | - | - | - | - | - | Advanced Semiconductor, Inc. | - | - | 1 | 40 A | - | Advanced Semiconductor, Inc. | - | + 200 C | - | - 65 C | SMD/SMT | - | - | - | - | - | - | - | - | 500 W | - | 5 mOhms | - | - | Details | N-Channel | 1.132118 oz | 130 V | 4 V | - | - | - | Tray | - | - | - | - | - | - | - | - | - | RF Power MOSFET | - | - | - | - | - | - | - | - | MOSFETs | Si | - | - | - | - | - | - | - | - | 250 MHz | - | - | - | - | Single | - | - | - | - | 350 W | - | - | RF MOSFET Transistors | 15 dB | - | - | - | - | - | - | - | RF MOSFET Transistors | - | - | - | - | - | - | - | ||||
| SD2942 |
Transistors - FETs, MOSFETs - RF definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - RF Product Listing: AGR26125EF,AGR21060EF,AGR09090EF,AGR19180EF,AGR09045EF.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - FETs, MOSFETs - RF has 50 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the MOST.
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