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Products Found
| Compare | Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | RoHS | Mounting Type | Package / Case | Surface Mount | Number of Terminals | Transistor Element Material | Class | Drain Current-Max (ID) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Elements | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Product Status | Risk Rank | Rohs Code | Operating Temperature | Series | Size / Dimension | JESD-609 Code | ECCN Code | Terminal Finish | Applications | Current Rating (Amps) | Terminal Position | Terminal Form | Reach Compliance Code | Reference Standard | JESD-30 Code | Approval Agency | Configuration | Operating Mode | Case Connection | Response Time | Transistor Application | Fuse Type | Breaking Capacity @ Rated Voltage | Polarity/Channel Type | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Features |
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Datasheet
| Mfr. Part #STGWT20V60DFMOST Part #17568-372-STGWT20V60DF | NXP |
STGWT20V60DF - IGBT 20A (@100C)
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | NXP Semiconductors | - | - | Bulk | - | - | - | - | - | Obsolete | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| STGWT20V60DF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #MGW30N60MOST Part #17568-372-MGW30N60 | NXP |
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| MGW30N60 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #MGW20N120MOST Part #17568-372-MGW20N120 | NXP |
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| MGW20N120 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #BUK9K17-60EMOST Part #17568-372-BUK9K17-60E | NXP |
IGBT Transistors MOSFET 60V Mosfet Dual N-Channel
| 30000
In Stock
| Min.:1 Mult.:1 | Requires Holder | Cartridge, Non-Standard | YES | 6 | SILICON | - | 26 A | NEXPERIA | Nexperia | BUK9K17-60E | Eaton - Bussmann Electrical Division | 1 | 2 | Bulk | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G6 | RECTANGULAR | SMALL OUTLINE | Active | Active | 5.38 | Yes | - | - | - | e3 | EAR99 | Tin (Sn) | Electrical, Industrial | - | DUAL | GULL WING | not_compliant | AEC-Q101; IEC-60134 | R-PDSO-G6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | Cartridge | - | N-CHANNEL | 0.017 Ω | 148 A | 60 V | 64 mJ | METAL-OXIDE SEMICONDUCTOR | - | |||
| BUK9K17-60E |
Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: STGWT20V60DF,MGW30N60,MGW20N120,BUK9K17-60E.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - IGBTs - Single has 4 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the MOST.
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