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Compare Image Part # Manufacturer Description Availability Pricing Quantity RoHS Surface MountNumber of TerminalsTransistor Element MaterialIhs ManufacturerNumber of ElementsOperating Temperature-MaxPackage Body MaterialPackage DescriptionPackage ShapePackage StylePart Life Cycle CodeTurn-off Time-Nom (toff)Turn-on Time-Nom (ton)ECCN CodeTerminal PositionTerminal FormReach Compliance CodeJESD-30 CodeQualification StatusConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypePower Dissipation-Max (Abs)Collector Current-Max (IC)Collector-Emitter Voltage-MaxGate-Emitter Voltage-MaxVCEsat-Max
PDMB600E6 Datasheet
Mfr. Part #
PDMB600E6
MOST Part #
428-372-PDMB600E6		 KYOCERA Corporation
Description: Insulated Gate Bipolar Transistor
    Min.:1
    Mult.:1
    		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active 400 ns 300 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 600 A 600 V - -
    PDMB600E6
    PDMB600E6

    428-372-PDMB600E6 KYOCERA Corporation
    RoHS :
    Package : -
    In Stock : -
    1 : -
    		PCHMB75B12A Datasheet
    Mfr. Part #
    PCHMB75B12A
    MOST Part #
    428-372-PCHMB75B12A    		 KYOCERA Corporation
    Description: Insulated Gate Bipolar Transistor
      Min.:1
      Mult.:1
      		 NO 5 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED MODULE-5 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X5 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL 400 W 75 A 1200 V 20 V 2.4 V
      PCHMB75B12A
      PCHMB75B12A

      428-372-PCHMB75B12A KYOCERA Corporation
      RoHS :
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      In Stock : -
      1 : -
      		PDMB300B12C Datasheet
      Mfr. Part #
      PDMB300B12C
      MOST Part #
      428-372-PDMB300B12C      		 KYOCERA Corporation
      Insulated Gate Bipolar Transistor
        Min.:1
        Mult.:1
        		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED MODULE-7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 1600 W 300 A 1200 V 20 V 2.4 V
        PDMB300B12C
        PDMB300B12C

        428-372-PDMB300B12C KYOCERA Corporation
        RoHS :
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        In Stock : -
        1 : -
        		PHMB1200B12 Datasheet
        Mfr. Part #
        PHMB1200B12
        MOST Part #
        428-372-PHMB1200B12        		 KYOCERA Corporation
        Insulated Gate Bipolar Transistor
          Min.:1
          Mult.:1
          		 - - - KYOCERA CORP - - - , - - Active - - EAR99 - - unknown - - - - - - - - - - -
          PHMB1200B12
          PHMB1200B12

          428-372-PHMB1200B12 KYOCERA Corporation
          RoHS :
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          		PBMB150B12 Datasheet
          Mfr. Part #
          PBMB150B12
          MOST Part #
          428-372-PBMB150B12          		 KYOCERA Corporation
          Description: Insulated Gate Bipolar Transistor
            Min.:1
            Mult.:1
            		 NO 8 SILICON KYOCERA CORP 4 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X8 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X8 Not Qualified BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 730 W 150 A 1200 V 20 V 2.4 V
            PBMB150B12
            PBMB150B12

            428-372-PBMB150B12 KYOCERA Corporation
            RoHS :
            Package : -
            In Stock : -
            1 : -
            		PCHMB75B12 Datasheet
            Mfr. Part #
            PCHMB75B12
            MOST Part #
            428-372-PCHMB75B12            		 KYOCERA Corporation
            Insulated Gate Bipolar Transistor
              Min.:1
              Mult.:1
              		 NO 5 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X5 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X5 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL 400 W 75 A 1200 V 20 V 2.4 V
              PCHMB75B12
              PCHMB75B12

              428-372-PCHMB75B12 KYOCERA Corporation
              RoHS :
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              In Stock : -
              1 : -
              		PBMB75E6 Datasheet
              Mfr. Part #
              PBMB75E6
              MOST Part #
              428-372-PBMB75E6              		 KYOCERA Corporation
              Insulated Gate Bipolar Transistor
                Min.:1
                Mult.:1
                		 NO 12 SILICON KYOCERA CORP 4 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X12 RECTANGULAR FLANGE MOUNT Active 350 ns 250 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X12 Not Qualified BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 75 A 600 V - -
                PBMB75E6
                PBMB75E6

                428-372-PBMB75E6 KYOCERA Corporation
                RoHS :
                Package : -
                In Stock : -
                1 : -
                		PHMB400B12 Datasheet
                Mfr. Part #
                PHMB400B12
                MOST Part #
                428-372-PHMB400B12                		 KYOCERA Corporation
                Description: Insulated Gate Bipolar Transistor
                  Min.:1
                  Mult.:1
                  		 NO 4 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED - RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X4 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 1900 W 400 A 1200 V 20 V 2.4 V
                  PHMB400B12
                  PHMB400B12

                  428-372-PHMB400B12 KYOCERA Corporation
                  RoHS :
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                  In Stock : -
                  1 : -
                  		PHMB600E6C Datasheet
                  Mfr. Part #
                  PHMB600E6C
                  MOST Part #
                  428-372-PHMB600E6C                  		 KYOCERA Corporation
                  Insulated Gate Bipolar Transistor
                    Min.:1
                    Mult.:1
                    		 NO 4 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X4 RECTANGULAR FLANGE MOUNT Active 400 ns 300 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X4 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 600 A 600 V - -
                    PHMB600E6C
                    PHMB600E6C

                    428-372-PHMB600E6C KYOCERA Corporation
                    RoHS :
                    Package : -
                    In Stock : -
                    1 : -
                    		PDMB150B12C2 Datasheet
                    Mfr. Part #
                    PDMB150B12C2
                    MOST Part #
                    428-372-PDMB150B12C2                    		 KYOCERA Corporation
                    Insulated Gate Bipolar Transistor
                      Min.:1
                      Mult.:1
                      		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED MODULE-7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 730 W 150 A 1200 V 20 V 2.4 V
                      PDMB150B12C2
                      PDMB150B12C2

                      428-372-PDMB150B12C2 KYOCERA Corporation
                      RoHS :
                      Package : -
                      In Stock : -
                      1 : -
                      		PRHMB400B12 Datasheet
                      Mfr. Part #
                      PRHMB400B12
                      MOST Part #
                      428-372-PRHMB400B12                      		 KYOCERA Corporation
                      Insulated Gate Bipolar Transistor
                        Min.:1
                        Mult.:1
                        		 NO 5 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED MODULE-5 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X5 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL 1900 W 400 A 1200 V 20 V 2.4 V
                        PRHMB400B12
                        PRHMB400B12

                        428-372-PRHMB400B12 KYOCERA Corporation
                        RoHS :
                        Package : -
                        In Stock : -
                        1 : -
                        		PDMB150E6C Datasheet
                        Mfr. Part #
                        PDMB150E6C
                        MOST Part #
                        428-372-PDMB150E6C                        		 KYOCERA Corporation
                        Insulated Gate Bipolar Transistor
                          Min.:1
                          Mult.:1
                          		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active 350 ns 250 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 150 A 600 V - -
                          PDMB150E6C
                          PDMB150E6C

                          428-372-PDMB150E6C KYOCERA Corporation
                          RoHS :
                          Package : -
                          In Stock : -
                          1 : -
                          		PDMB50B12 Datasheet
                          Mfr. Part #
                          PDMB50B12
                          MOST Part #
                          428-372-PDMB50B12                          		 KYOCERA Corporation
                          Insulated Gate Bipolar Transistor
                            Min.:1
                            Mult.:1
                            		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 250 W 50 A 1200 V 20 V 2.4 V
                            PDMB50B12
                            PDMB50B12

                            428-372-PDMB50B12 KYOCERA Corporation
                            RoHS :
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                            In Stock : -
                            1 : -
                            		PBMB75B12 Datasheet
                            Mfr. Part #
                            PBMB75B12
                            MOST Part #
                            428-372-PBMB75B12                            		 KYOCERA Corporation
                            Insulated Gate Bipolar Transistor
                              Min.:1
                              Mult.:1
                              		 NO 12 SILICON KYOCERA CORP 4 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X12 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X12 Not Qualified BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 400 W 75 A 1200 V 20 V 2.4 V
                              PBMB75B12
                              PBMB75B12

                              428-372-PBMB75B12 KYOCERA Corporation
                              RoHS :
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                              In Stock : -
                              1 : -
                              		PDMB200BS12C Datasheet
                              Mfr. Part #
                              PDMB200BS12C
                              MOST Part #
                              428-372-PDMB200BS12C                              		 KYOCERA Corporation
                              Insulated Gate Bipolar Transistor
                                Min.:1
                                Mult.:1
                                		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 200 A 1200 V - -
                                PDMB200BS12C
                                PDMB200BS12C

                                428-372-PDMB200BS12C KYOCERA Corporation
                                RoHS :
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                                In Stock : -
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                                		PBMB150E6 Datasheet
                                Mfr. Part #
                                PBMB150E6
                                MOST Part #
                                428-372-PBMB150E6                                		 KYOCERA Corporation
                                Insulated Gate Bipolar Transistor
                                  Min.:1
                                  Mult.:1
                                  		 NO 12 SILICON KYOCERA CORP 4 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X12 RECTANGULAR FLANGE MOUNT Active 350 ns 250 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X12 Not Qualified BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 150 A 600 V - -
                                  PBMB150E6
                                  PBMB150E6

                                  428-372-PBMB150E6 KYOCERA Corporation
                                  RoHS :
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                                  In Stock : -
                                  1 : -
                                  		PDMB75E6 Datasheet
                                  Mfr. Part #
                                  PDMB75E6
                                  MOST Part #
                                  428-372-PDMB75E6                                  		 KYOCERA Corporation
                                  Insulated Gate Bipolar Transistor
                                    Min.:1
                                    Mult.:1
                                    		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active 350 ns 250 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 75 A 600 V - -
                                    PDMB75E6
                                    PDMB75E6

                                    428-372-PDMB75E6 KYOCERA Corporation
                                    RoHS :
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                                    In Stock : -
                                    1 : -
                                    		PBMB200B12 Datasheet
                                    Mfr. Part #
                                    PBMB200B12
                                    MOST Part #
                                    428-372-PBMB200B12                                    		 KYOCERA Corporation
                                    Insulated Gate Bipolar Transistor
                                      Min.:1
                                      Mult.:1
                                      		 NO 8 SILICON KYOCERA CORP 4 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X8 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X8 Not Qualified BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 960 W 200 A 1200 V 20 V 2.4 V
                                      PBMB200B12
                                      PBMB200B12

                                      428-372-PBMB200B12 KYOCERA Corporation
                                      RoHS :
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                                      In Stock : -
                                      1 : -
                                      		PDMB200B12C2 Datasheet
                                      Mfr. Part #
                                      PDMB200B12C2
                                      MOST Part #
                                      428-372-PDMB200B12C2                                      		 KYOCERA Corporation
                                      Insulated Gate Bipolar Transistor
                                        Min.:1
                                        Mult.:1
                                        		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED MODULE-7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 960 W 200 A 1200 V 20 V 2.4 V
                                        PDMB200B12C2
                                        PDMB200B12C2

                                        428-372-PDMB200B12C2 KYOCERA Corporation
                                        RoHS :
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                                        In Stock : -
                                        1 : -
                                        		PRHMB50B12 Datasheet
                                        Mfr. Part #
                                        PRHMB50B12
                                        MOST Part #
                                        428-372-PRHMB50B12                                        		 KYOCERA Corporation
                                        Description: Insulated Gate Bipolar Transistor
                                          Min.:1
                                          Mult.:1
                                          		 NO 5 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X5 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X5 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL 250 W 50 A 1200 V 20 V 2.4 V
                                          PRHMB50B12
                                          PRHMB50B12

                                          428-372-PRHMB50B12 KYOCERA Corporation
                                          RoHS :
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                                          In Stock : -
                                          1 : -

                                          Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: PDMB600E6,PCHMB75B12A,PDMB300B12C,PHMB1200B12,PBMB150B12.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - IGBTs - Single has 46 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the MOST.