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Datasheet
| Mfr. Part #IRFR220NTRPBFMOST Part #3717-375-IRFR220NTRPBF | International Rectifier |
Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | YES | - | - | - | 2 | SILICON | 1 | - | - | - | - | 5 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE, PLASTIC, DPAK-2/3 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | EAR99 | - | - | - | - | Matte Tin (Sn) - with Nickel (Ni) barrier | - | - | 8541.29.00.95 | - | SINGLE | GULL WING | 260 | - | not_compliant | - | 30 | - | 3 | - | R-PSSO-G2 | Not Qualified | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-252AA | - | - | 0.6 Ω | 20 A | 200 V | 46 mJ | METAL-OXIDE SEMICONDUCTOR | 43 W | - | - | - | - | - | 1 | - | - | - | - | - | - | - | ||||
| IRFR220NTRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #IRLML6402TRPBFMOST Part #3717-375-IRLML6402TRPBF | International Rectifier |
Description: Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | YES | - | PBT (UL 94 V-0) | - | 3 | SILICON | 1 | PWS-E flat | - | component part of IDC-34F punch-down connector with 2.54 mm pitch | - | 3.7 A | screw | - | 225 g | - | INTERNATIONAL RECTIFIER CORP | - | M6 screws | - | 1kA | 1.8kV | - | - | screw | - | - | 150 °C | - | PLASTIC/EPOXY | LEAD FREE, MICRO-3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-23 | - | Yes | - | - | - | - | 53*31*52/1000 | - | single-phase | module - slim | - | - | - | e3 | Yes | - | EAR99 | IDC-34F latch top | - | - | - | MATTE TIN | - | HIGH RELIABILITY | - | - | DUAL | GULL WING | 260 | 6 mm | compliant | - | 30 | - | 3 | - | R-PDSO-G3 | Not Qualified | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | SWITCHING | P-CHANNEL | -20…+105 °C | - | TO-236AB | - | - | 0.065 Ω | 22 A | 20 V | 11 mJ | METAL-OXIDE SEMICONDUCTOR | 1.3 W | 84A | - | - | - | - | 1 | - | - | - | 13.55 mm | - | 47.68 mm | - | ||||
| IRLML6402TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IRLMS5703TRPBFMOST Part #3717-375-IRLMS5703TRPBF | International Rectifier |
Description: Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | YES | - | - | - | 6 | SILICON | 1 | - | - | - | - | 2.3 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | MICRO-6 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | EAR99 | - | - | - | - | MATTE TIN | - | HIGH RELIABILITY | 8541.21.00.95 | - | DUAL | GULL WING | 260 | - | unknown | - | 30 | - | 6 | - | R-PDSO-G6 | Not Qualified | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | SWITCHING | P-CHANNEL | - | - | - | - | - | 0.2 Ω | 13 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 1.7 W | - | - | - | - | 0.78 W | 1 | - | - | - | - | - | - | - | ||||
| IRLMS5703TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IRF8707TRPBFMOST Part #3717-375-IRF8707TRPBF | International Rectifier |
Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | YES | - | - | flame retardant plastic | - | - | 1 | - | - | device; ring current sensor Ф14.8/ 32.8 mm | - | 11 A | - | - | - | 45.25 | INTERNATIONAL RECTIFIER CORP | Ф22 mm | - | - | - | - | - | voltage (AC) - 60…500 V, 0-100A | - | - | - | 150 °C | - | - | - | - | - | Transferred | - | - | Yes | - | - | - | 35*32*26/200 | - | - | - | - | - | - | - | - | Yes | - | EAR99 | - | - | Digital LED Volt-Ammeter DMS series (AD16-22FVA G) | - | - | green | - | - | - | - | - | - | 55.5 mm | unknown | - | - | - | - | - | - | - | - | - | - | - | device - 285 mm | - | SINGLE | - | ≥2 MOhm | ENHANCEMENT MODE | - | - | - | - | N-CHANNEL | - | -25…+65 °C | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | - | - | - | - | - | - | 31.2 mm | - | 26.9 mm | - | ||||
| IRF8707TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #IRF540NLPBFMOST Part #3717-375-IRF540NLPBF | International Rectifier |
Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | NO | - | - | - | 3 | SILICON | 1 | - | - | - | DC-DC boost converter (10...32/ 12...35 V) | 33 A | - | - | 75.55 | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | input - 16/ output - 10 A | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Transferred | TO-262AA | from input polarity reversal | Yes | - | - | 48*32*22.5/104 | - | - | - | - | - | - | - | - | e3 | Yes | - | EAR99 | - | screw type | - | - | Matte Tin (Sn) - with Nickel (Ni) barrier | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | - | - | SINGLE | THROUGH-HOLE | 260 | 65 mm | not_compliant | conversion - 150 kHz | 30 | - | 3 | - | R-PSIP-T3 | Not Qualified | - | up to 94 % | 12…35 (adjustable or fixed) V | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | 10 A | DRAIN | 25 mA not more | SWITCHING | N-CHANNEL | - | -40 …+80 (T~45 °C at U=19 B/ I=3.42 A) °C | TO-262AA | - | - | 0.044 Ω | 110 A | 100 V | 185 mJ | METAL-OXIDE SEMICONDUCTOR | 130 W | - | - | - | 100 (150 with forced cooling) W | - | 1 | 10…32 V | DC-DC boost | - | 23 mm | - | 56.5 mm | - | ||||
| IRF540NLPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IRFB7440PBFMOST Part #3717-375-IRFB7440PBF | International Rectifier |
Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | NO | zinc-coated carbon steel | - | - | 3 | SILICON | 1 | - | maximum working load on axis - 50 kg | - | - | 120 A | - | - | 60.13 | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | ROHS COMPLIANT, PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | Yes | - | d - M6 mm | - | - | 25*21*19/200 | - | - | - | - | - | - | - | - | - | EAR99 | - | - | Eyebolt, DIN 580 series | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | - | - | R-PSFM-T3 | - | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | - | - | 0.0025 Ω | 772 A | 40 V | 238 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | base - d1 - 17; k - 6 mm | b - 13; e - 6; h - 17 mm | - | - | - | ||||
| IRFB7440PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #IRF1018EPBFMOST Part #3717-375-IRF1018EPBF | International Rectifier |
Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | NO | polyamide PA66, white | - | - | 3 | SILICON | 1 | - | - | - | - | 79 A | - | thread (d) - M3; thread length (L) - 16 mm | 0.17 | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | Yes | - | - | 32*32*18/10000 | - | - | - | - | - | - | - | - | e3 | Yes | - | EAR99 | - | - | DIN84 series polyamide screw | - | MATTE TIN OVER NICKEL | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | - | - | 3 | - | R-PSFM-T3 | Not Qualified | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | - | - | 0.0084 Ω | 315 A | 60 V | 88 mJ | METAL-OXIDE SEMICONDUCTOR | 110 W | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| IRF1018EPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IRFB7437PBFMOST Part #3717-375-IRFB7437PBF | International Rectifier |
Description: Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | NO | polyamide PA66, white | - | - | 3 | SILICON | 1 | - | thread (d) - M4; thread length (L) - 16 mm | - | - | 195 A | - | - | - | 0.28 | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | Yes | - | - | - | - | - | 48*32*27/20000 | - | - | - | - | - | - | - | - | EAR99 | - | - | DIN84 series polyamide screw | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | - | - | R-PSFM-T3 | - | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | - | - | 0.002 Ω | 1000 A | 40 V | 350 mJ | METAL-OXIDE SEMICONDUCTOR | 230 W | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| IRFB7437PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #IRFB5615PBFMOST Part #3717-375-IRFB5615PBF | International Rectifier |
Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | NO | polyamide PA66, white | - | - | 3 | SILICON | 1 | - | - | - | - | 35 A | - | - | - | 0.11 | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | Yes | - | M4 | - | - | - | 42*28*23.5/50000 | - | - | - | - | - | e3 | Yes | - | EAR99 | - | - | polyamide nut DIN 555 series | - | MATTE TIN OVER NICKEL | - | - | - | - | SINGLE | THROUGH-HOLE | 250 | - | compliant | - | 30 | - | 3 | - | R-PSFM-T3 | Not Qualified | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | AMPLIFIER | N-CHANNEL | - | - | TO-220AB | - | - | 0.039 Ω | 140 A | 150 V | 109 mJ | METAL-OXIDE SEMICONDUCTOR | 144 W | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| IRFB5615PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IRFR12N25DTRRPBFMOST Part #3717-375-IRFR12N25DTRRPBF | International Rectifier |
Description: Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | YES | - | - | - | 2 | SILICON | 1 | - | - | - | - | 14 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | TO-252AA | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | EAR99 | - | - | - | - | MATTE TIN OVER NICKEL | - | - | - | - | SINGLE | GULL WING | - | - | compliant | - | - | - | 3 | - | R-PSSO-G2 | Not Qualified | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-252AA | - | - | 0.26 Ω | 56 A | 250 V | 250 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | ||||
| IRFR12N25DTRRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IRF9952TRPBFMOST Part #3717-375-IRF9952TRPBF | International Rectifier |
Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | YES | - | - | - | 8 | SILICON | 2 | - | - | - | - | 3.5 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | EAR99 | - | - | - | - | MATTE TIN | - | HIGH RELIABILITY | - | - | DUAL | GULL WING | 260 | - | unknown | - | 30 | - | - | - | R-PDSO-G8 | Not Qualified | - | - | - | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL AND P-CHANNEL | - | - | - | - | - | 0.1 Ω | 16 A | 30 V | 44 mJ | METAL-OXIDE SEMICONDUCTOR | 2 W | - | - | - | - | - | 1 | - | - | - | - | - | - | - | ||||
| IRF9952TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IRL3705NPBFMOST Part #3717-375-IRL3705NPBF | International Rectifier |
Description: Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | NO | - | - | - | 3 | SILICON | 1 | - | - | - | - | 89 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | EAR99 | - | - | - | - | MATTE TIN OVER NICKEL | - | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | 8541.29.00.95 | - | SINGLE | THROUGH-HOLE | 250 | - | unknown | - | 30 | - | 3 | - | R-PSFM-T3 | Not Qualified | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | - | - | 0.012 Ω | 310 A | 55 V | 340 mJ | METAL-OXIDE SEMICONDUCTOR | 130 W | - | - | - | - | 170 W | - | - | - | - | - | - | - | - | ||||
| IRL3705NPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IRFB3306GPBFMOST Part #3717-375-IRFB3306GPBF | International Rectifier |
Description: Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | NO | - | - | - | 3 | SILICON | 1 | - | - | - | - | 120 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | EAR99 | - | - | - | - | MATTE TIN OVER NICKEL | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | 3 | - | R-PSFM-T3 | Not Qualified | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | - | - | 0.0042 Ω | 620 A | 60 V | 184 mJ | METAL-OXIDE SEMICONDUCTOR | 230 W | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| IRFB3306GPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #IRFB4227PBFMOST Part #3717-375-IRFB4227PBF | International Rectifier |
Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | NO | - | - | - | 3 | SILICON | 1 | - | - | - | - | 65 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | EAR99 | - | - | - | - | MATTE TIN OVER NICKEL | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | - | - | 3 | - | R-PSFM-T3 | Not Qualified | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | - | - | 0.024 Ω | 260 A | 200 V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 330 W | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| IRFB4227PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #IRFU4615PBFMOST Part #3717-375-IRFU4615PBF | International Rectifier |
Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | NO | - | - | - | 3 | SILICON | 1 | - | - | - | - | 33 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | ROHS COMPLIANT, IPAK-3 | RECTANGULAR | IN-LINE | Transferred | TO-251AA | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | EAR99 | - | - | - | - | Matte Tin (Sn) - with Nickel (Ni) barrier | - | - | - | - | SINGLE | THROUGH-HOLE | 260 | - | not_compliant | - | 30 | - | 3 | - | R-PSIP-T3 | Not Qualified | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-251AA | - | - | 0.042 Ω | 140 A | 150 V | 109 mJ | METAL-OXIDE SEMICONDUCTOR | 144 W | - | - | - | - | - | 1 | - | - | - | - | - | - | - | ||||
| IRFU4615PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IRF7413ZTRPBFMOST Part #3717-375-IRF7413ZTRPBF | International Rectifier |
Description: Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | YES | - | - | - | - | - | 1 | - | - | - | - | 13 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | , | - | - | Transferred | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | EAR99 | - | - | - | - | MATTE TIN | - | - | - | - | - | - | 260 | - | unknown | - | 30 | - | - | - | - | - | - | - | - | - | - | - | SINGLE | - | - | ENHANCEMENT MODE | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | - | - | 1 | - | - | - | - | - | - | - | ||||
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Datasheet
| Mfr. Part #IRF8707GTRPBFMOST Part #3717-375-IRF8707GTRPBF | International Rectifier |
Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | YES | carbon steel | - | - | - | - | 1 | - | - | - | - | 11 A | - | - | 21.86 | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | Worm clamp with cross slot | 150 °C | - | - | - | - | - | Transferred | - | - | Yes | - | - | - | - | 42*32*47/700 | - | - | - | - | - | - | - | - | - | EAR99 | - | - | Worm clamp with cross slot | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | SINGLE | - | - | ENHANCEMENT MODE | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | - | - | - | - | - | min = 59 | - | - | 12 | 0.6 mm | ||||
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Datasheet
| Mfr. Part #IRFR4104TRPBFMOST Part #3717-375-IRFR4104TRPBF | International Rectifier |
Power Field-Effect Transistor
| Min.:1 Mult.:1 | through hole | - | YES | - | - | - | 2 | SILICON | 1 | - | - | - | - | 42 A | - | - | 1.03 | - | INTERNATIONAL RECTIFIER CORP | - | - | max. ± 5 ppm/ year | - | - | - | - | - | ams-OSRAM USA INC. | - | 150 °C | miniature - U size | PLASTIC/EPOXY | LEAD FREE, PLASTIC, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | - | Yes | temperature characteristic ± 30 ppm (-20…+70 °C) | - | - | - | 28.5*21*19/3000 | - | - | - | - | Tape & Reel (TR);Cut Tape (CT);Digi-Reel® | Power TOPLED® | e3 | Yes | Active | EAR99 | - | - | HC49 series quartz resonator | ESR max - 50 Ohm | Matte Tin (Sn) - with Nickel (Ni) barrier | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | - | 20 pF | SINGLE | GULL WING | 260 | package - 10.2 max; full - 11.05 max mm | compliant | 2.4576 MHz | 30 | ± 20 (at T=25 °C) ppm | 3 | - | R-PSSO-G2 | Not Qualified | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | ≥500 (at Uis.dc=100 V) MOhm | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | -20 …+70 °C | - | TO-252AA | - | - | 0.0055 Ω | 480 A | 40 V | 145 mJ | METAL-OXIDE SEMICONDUCTOR | 140 W | - | - | - | - | - | 1 | - | - | - | 13.2 (package) mm | - | package - 3.7 max; full - 4.65 max mm | - | ||||
| IRFR4104TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #IRF2804PBFMOST Part #3717-375-IRF2804PBF | International Rectifier |
Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | - | NO | - | - | - | 3 | SILICON | 1 | - | - | - | - | 75 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE, PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | EAR99 | - | - | - | - | MATTE TIN OVER NICKEL | - | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 8541.29.00.95 | - | SINGLE | THROUGH-HOLE | 250 | - | compliant | - | 30 | - | 3 | - | R-PSFM-T3 | Not Qualified | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | - | - | 0.0023 Ω | 1080 A | 40 V | 540 mJ | METAL-OXIDE SEMICONDUCTOR | 330 W | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
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Datasheet
| Mfr. Part #IRF7831TRPBFMOST Part #3717-375-IRF7831TRPBF | International Rectifier |
Power Field-Effect Transistor
| Min.:1 Mult.:1 | - | Chassis Mount | YES | anodized aluminum | - | - | - | - | 1 | - | - | profile; diffuser; end cap - 2pcs.; | - | 21 A | - | - | 125.00 | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | Littelfuse Inc. | - | 150 °C | - | - | - | - | - | Transferred | - | - | Yes | - | - | - | - | 105*17*8/40 | - | - | - | -40°C ~ 70°C | Bulk | SRP1-CB | e3 | Yes | Active | EAR99 | - | - | Surface-mounted aluminum profile for LED strip series 505 | - | MATTE TIN | silver | - | - | - | - | - | 260 | profile length - 1m | unknown | - | 30 | - | - | Screw Terminal | - | - | CE, cURus, IEC | - | - | AC | - | SPST-NO (1 Form A) | SINGLE | - | - | ENHANCEMENT MODE | - | - | - | - | N-CHANNEL | - | - | - | 24 V ~ 240 V | 6.3 mOhms | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | 10 A | 4 ~ 32VDC | - | - | 1 | - | - | - | 12.1 mm | 1000 mm | outer - 17.4 mm; inner - 12.4 mm | - | ||||
| IRF7831TRPBF |
Transistors - Special Purpose definition: Transistors - Special Purpose Product Listing: IRFR220NTRPBF,IRLML6402TRPBF,IRLMS5703TRPBF,IRF8707TRPBF,IRF540NLPBF.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - Special Purpose has 413 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the MOST.
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