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Products Found
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Datasheet
| Mfr. Part #BCV61CE6327HTSA1MOST Part #376-375-BCV61CE6327HTSA1 | Infineon Technologies |
TRANSISTOR NPN DOUBLE SOT-143
| 450
In Stock
| Min.:1 Mult.:1 | 4 Weeks | Tin | Surface Mount | Surface Mount | TO-253-4, TO-253AA | - | 4 | - | - | - | - | - | - | - | - | - | 30V | - | - | - | - | - | - | - | - | - | - | - | 110 | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | 2005 | - | e3 | Last Time Buy | 1 (Unlimited) | 4 | SMD/SMT | EAR99 | - | - | - | 150°C | -65°C | - | Current Mirror | - | - | - | 30V | 300mW | - | GULL WING | - | - | 100mA | 250MHz | - | - | BCV61 | AEC-Q101 | - | - | - | NPN | - | - | - | Dual | - | 300mW | - | - | Not Halogen Free | - | 2 NPN, Base Collector Junction | 600mV | 100mA | - | - | - | 250MHz | - | - | - | - | - | 30V | - | 6V | - | - | 420 | - | - | - | - | - | - | - | 2.9mm | No | No SVHC | ROHS3 Compliant | Lead Free | |||
| BCV61CE6327HTSA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #BCV61BE6327HTSA1MOST Part #376-375-BCV61BE6327HTSA1 | Infineon Technologies |
Trans GP BJT NPN 30V 0.1A Automotive 4-Pin(3+Tab) SOT-143 T/R
| 20
In Stock
| Min.:1 Mult.:1 | 4 Weeks | - | Surface Mount | Surface Mount | TO-253-4, TO-253AA | - | 4 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | 2005 | - | e3 | Last Time Buy | 1 (Unlimited) | 4 | - | EAR99 | - | - | Tin (Sn) | 150°C | -65°C | - | Current Mirror | - | - | - | 30V | 300mW | DUAL | GULL WING | - | - | 100mA | 250MHz | - | - | BCV61 | AEC-Q101 | - | - | - | NPN | - | - | - | - | - | 300mW | - | - | Not Halogen Free | - | 2 NPN, Base Collector Junction | 5V | 100mA | - | - | - | 250MHz | - | - | - | - | - | 30V | - | 6V | - | - | 200 | - | - | - | - | - | 900μm | 2.9mm | 1.3mm | No | - | ROHS3 Compliant | Lead Free | |||
| BCV61BE6327HTSA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #IRFZ24NSMOST Part #376-375-IRFZ24NS | Infineon Technologies AG |
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
| 10000
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | 17 A | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | 175 °C | - | - | PLASTIC/EPOXY | PLASTIC, D2PAK-3 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | - | EAR99 | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | AVALANCHE RATED, HIGH RELIABILITY | 8541.29.00.95 | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | not_compliant | - | - | NOT SPECIFIED | - | - | - | R-PSSO-G2 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | TO-263AB | 0.07 Ω | - | - | 68 A | 55 V | 71 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | 45 W | 1 | - | - | - | - | - | - | - | - | |||
| IRFZ24NS | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IRFL014NMOST Part #376-375-IRFL014N | Infineon Technologies AG |
Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | 1.9 A | - | 95% | - | 1 - 30 N | 2.22 | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | 500 | 150 °C | -55 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | No | - | - | - | ~ 500V | - | 42*28*18.5/2000 | - | - | - | - | - | e0 | - | - | - | - | EAR99 | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | AVALANCHE RATED | - | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | not_compliant | - | - | NOT SPECIFIED | - | - | - | R-PSSO-G3 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | 100 MOhm Min | ~ 50V | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | TO-261AA | 0.16 Ω | - | - | - | 55 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | 0.3 A | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | ||||
| IRFL014N | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IRFR3704ZMOST Part #376-375-IRFR3704Z | Infineon Technologies AG |
Power Field-Effect Transistor, 30A I(D), 20V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
| Min.:1 Mult.:1 | - | - | - | through hole | - | YES | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | ± 30 ppm temperature characteristic (-20…+70 °C) | 30 A | - | - | - | - | 0.59 | - | INFINEON TECHNOLOGIES AG | - | - | max. ± 5 ppm/ year | - | - | - | - | - | - | miniature - US size | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | Yes | - | - | - | - | - | 42*28*18.5/5000 | - | - | - | - | - | - | - | - | - | - | EAR99 | HC49 Quartz Resonator | ESR max - 50 Ohm | - | - | - | - | - | - | - | 16 pF | - | - | SINGLE | GULL WING | NOT SPECIFIED | compliant | - | 6 MHz | NOT SPECIFIED | ± 20 (at T=25 °C) ppm | - | - | R-PSSO-G2 | - | - | - | SINGLE WITH BUILT-IN DIODE | 500 (at Uappl.dc=100 V) MOhm min | - | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | -20…+70 °C | TO-252AA | 0.0084 Ω | - | - | 240 A | 20 V | 41 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | ||||
| IRFR3704Z | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IRFR24N15DMOST Part #376-375-IRFR24N15D | Infineon Technologies AG |
Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
| 8574
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | connector housing - PVC-45P | - | 2 | SILICON | 1 | 3 x 0.75 (42 strands x 0.15 mm) mm2 | - | - | - | - | - | - | - | - | - | 24 A | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | 250 V | - | - | - | - | - | PLASTIC/EPOXY | PLASTIC, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Active | No | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | - | EAR99 | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | - | SINGLE | GULL WING | 240 | not_compliant | - | - | 30 | - | - | - | R-PSSO-G2 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | TO-252AA | 0.095 Ω | - | - | 96 A | 150 V | 170 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | 1 | sheath - 6.5 ... 6.8 mm | - | 5000 mm | - | - | - | - | - | |||
| IRFR24N15D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #BC856WMOST Part #376-375-BC856W | Infineon Technologies AG |
Transistor,
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | - | Obsolete | - | - | - | - | - | 100 MHz | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | - | - | - | - | - | 0.2 W | - | - | 0.1 A | 125 | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| BC856W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IPT60R055CFD7MOST Part #376-375-IPT60R055CFD7 | Infineon Technologies AG |
Description: Power Field-Effect Transistor,
| 14681
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2020-06-23 | - | - | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | - | - | - | - | , | - | - | Active | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | - | - | - | - | EAR99 | - | - | TIN | - | - | - | - | - | - | - | - | - | - | - | 260 | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | |||
| IPT60R055CFD7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IMW65R048M1HMOST Part #376-375-IMW65R048M1H | Infineon Technologies AG |
Power Field-Effect Transistor,
| 27090
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | NO | - | - | - | 3 | SILICON CARBIDE | 1 | - | - | - | - | - | - | - | - | 2019-12-16 | - | 39 A | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | 150 °C | -55 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | - | - | - | - | EAR99 | - | - | Tin (Sn) | - | - | - | - | HIGH RELIABILITY | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | - | - | NOT SPECIFIED | - | - | - | R-PSFM-T3 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | TO-247 | 0.064 Ω | - | - | 100 A | 650 V | 171 mJ | METAL-OXIDE SEMICONDUCTOR | - | 125 W | - | - | - | - | 13 pF | - | - | - | - | - | - | - | - | - | - | - | |||
| IMW65R048M1H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IMW120R060M1HMOST Part #376-375-IMW120R060M1H | Infineon Technologies AG |
Description: Power Field-Effect Transistor,
| 1280
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | NO | - | - | - | 3 | SILICON CARBIDE | 1 | - | - | - | - | - | socket | 2x32 | 2.54mm | - | - | 36 A | THT | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | female | - | - | - | - | - | 175 °C | -55 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | Yes | 2.54mm | - | straight | - | - | - | - | pin strips | - | - | - | e3 | - | - | - | - | EAR99 | - | - | TIN | - | - | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | 260 | compliant | - | - | 10 | - | - | - | R-PSFM-T3 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | TO-247 | 0.106 Ω | - | - | 76 A | 1200 V | - | METAL-OXIDE SEMICONDUCTOR | - | 150 W | - | - | - | - | 6.5 pF | beryllium copper | - | - | - | - | - | - | - | - | - | - | |||
| IMW120R060M1H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IPW65R041CFD7MOST Part #376-375-IPW65R041CFD7 | Infineon Technologies AG |
Power Field-Effect Transistor,
| 18720
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | NO | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | socket | 1x43 | 2.54mm | 2020-06-23 | - | 50 A | THT | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | female | - | - | - | - | - | 150 °C | -55 °C | - | PLASTIC/EPOXY | , | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | straight | - | - | - | - | pin strips | - | - | - | e3 | - | - | - | - | EAR99 | - | - | TIN | - | - | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | - | - | - | - | R-PSFM-T3 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | TO-247 | 0.041 Ω | - | - | 211 A | 650 V | 248 mJ | METAL-OXIDE SEMICONDUCTOR | - | 227 W | - | - | - | - | - | beryllium copper | - | - | - | - | - | - | - | - | - | - | |||
| IPW65R041CFD7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #BSZ0702LSMOST Part #376-375-BSZ0702LS | Infineon Technologies AG |
Power Field-Effect Transistor,
| 255000
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | - | - | 8 | SILICON | 1 | - | - | - | - | - | socket | 1x11 | 2.54mm | - | - | 40 A | SMT | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | female | - | - | - | - | - | 150 °C | -55 °C | - | PLASTIC/EPOXY | - | SQUARE | SMALL OUTLINE | Obsolete | Yes | - | - | straight | - | - | - | - | pin strips | - | - | - | e3 | - | - | - | - | EAR99 | - | - | TIN | - | - | - | - | - | - | - | - | - | DUAL | NO LEAD | - | unknown | - | - | - | - | - | IEC-61249-2-21; IEC-68-1 | S-PDSO-N8 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | - | 0.004 Ω | - | - | 160 A | 60 V | 117 mJ | METAL-OXIDE SEMICONDUCTOR | - | 69 W | - | - | - | - | 44 pF | beryllium copper | - | 1 | - | - | - | - | - | - | - | - | |||
| BSZ0702LS | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IAUC24N10S5L300MOST Part #376-375-IAUC24N10S5L300 | Infineon Technologies AG |
Power Field-Effect Transistor,
| 5000
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | socket | 2x31 | 2.54mm | - | - | - | THT | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | female | - | - | - | - | - | - | - | - | - | , | - | - | Active | Yes | 2.54mm | - | straight | - | - | - | - | pin strips | - | - | - | e3 | - | - | - | - | EAR99 | - | - | Tin (Sn) | - | - | - | - | - | - | - | - | - | - | - | NOT SPECIFIED | compliant | - | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | beryllium copper | - | 1 | - | - | - | - | - | - | - | - | |||
| IAUC24N10S5L300 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IPW65R029CFD7MOST Part #376-375-IPW65R029CFD7 | Infineon Technologies AG |
Power Field-Effect Transistor,
| 4800
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | NO | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | socket | 2x15 | 2.54mm | 2020-06-19 | - | 69 A | SMT | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | female | - | - | - | - | - | 150 °C | -55 °C | - | PLASTIC/EPOXY | , | RECTANGULAR | FLANGE MOUNT | Active | - | 2.54mm | - | straight | - | - | - | - | pin strips | - | - | - | e3 | - | - | - | - | EAR99 | - | - | TIN | - | - | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | - | - | - | - | R-PSFM-T3 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | TO-247 | 0.029 Ω | - | - | 304 A | 650 V | 358 mJ | METAL-OXIDE SEMICONDUCTOR | - | 305 W | - | - | - | - | - | beryllium copper | - | - | - | - | - | - | - | - | - | - | |||
| IPW65R029CFD7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IPD80R450P7MOST Part #376-375-IPD80R450P7 | Infineon Technologies AG |
Power Field-Effect Transistor,
| 10000
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | socket | 1x23 | 2.54mm | - | - | - | THT | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | female | - | - | - | - | - | - | - | - | - | , | - | - | Active | Yes | - | - | straight | - | - | - | - | pin strips | - | - | - | e3 | - | - | - | - | EAR99 | - | - | Tin (Sn) | - | - | - | - | - | - | - | - | - | - | - | NOT SPECIFIED | compliant | - | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | beryllium copper | - | 1 | - | - | - | - | - | - | - | - | |||
| IPD80R450P7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IMBG120R140M1HMOST Part #376-375-IMBG120R140M1H | Infineon Technologies AG |
Power Field-Effect Transistor,
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | socket | 2x30 | 2.54mm | 2020-09-17 | - | - | THT | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | female | - | - | - | - | - | - | - | - | - | - | - | - | Active | Yes | 2.54mm | - | straight | - | - | - | - | pin strips | - | - | - | e3 | - | - | - | - | EAR99 | - | - | TIN | - | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | beryllium copper | - | 1 | - | - | - | - | - | - | - | - | ||||
| IMBG120R140M1H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IAUC120N06S5N017MOST Part #376-375-IAUC120N06S5N017 | Infineon Technologies AG |
Power Field-Effect Transistor,
| 25000
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2020-05-04 | - | - | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | - | - | - | - | , | - | - | Active | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | - | - | - | - | EAR99 | - | - | TIN | - | - | - | - | - | 8541.29.00.95 | - | - | - | - | - | 260 | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | |||
| IAUC120N06S5N017 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #BC160MOST Part #376-375-BC160 | Infineon Technologies AG |
Description: Transistor
| Min.:1 Mult.:1 | - | - | - | - | - | NO | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | 175 °C | - | - | - | - | - | - | Obsolete | No | - | - | - | - | 50 MHz | - | - | - | - | - | - | e0 | - | - | - | - | EAR99 | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | - | - | - | - | - | 3.7 W | - | - | 1 A | 40 | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| BC160 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IRF7301TRMOST Part #376-375-IRF7301TR | Infineon Technologies AG |
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
| 600
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | - | 0.2 kg | 8 | SILICON | 2 | - | - | - | - | - | - | - | - | - | - | 4.3 A | - | - | POS40 | - | 215.00 | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Obsolete | No | - | 285...330 °C | - | - | - | - | - | - | coil | - | - | e3 | - | - | - | - | EAR99 | Soft Tin-Lead Solder Sn/Pb | - | MATTE TIN | - | - | tin - 40%; lead - 60% | - | LOGIC LEVEL COMPATIBLE | - | - | - | - | DUAL | GULL WING | - | unknown | - | - | - | - | - | - | R-PDSO-G8 | Not Qualified | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | - | - | - | N-CHANNEL | - | - | - | - | MS-012AA | 0.05 Ω | - | wire | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | 2 | 2 mm | - | - | - | - | - | - | - | |||
| IRF7301TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #IRFR9120NMOST Part #376-375-IRFR9120N | Infineon Technologies AG |
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
| 135813
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | - | - | 2 | SILICON | 1 | - | KAM | 0805 | 2012 | - | - | - | - | - | - | 6.6 A | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | MLCC | - | - | SMD | - | - | - | 150 °C | - | - | PLASTIC/EPOXY | PLASTIC, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Active | No | - | - | - | - | - | - | ceramic | - | - | - | ±1% | e0 | - | - | - | - | EAR99 | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | - | 1nF | - | - | SINGLE | GULL WING | 240 | compliant | - | - | 30 | - | - | - | R-PSSO-G2 | Not Qualified | C0G (NP0) | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | P-CHANNEL | - | - | - | - | TO-252AA | 0.48 Ω | - | - | 26 A | 100 V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | |||
| IRFR9120N |
Transistors - Special Purpose definition: Transistors - Special Purpose Product Listing: BCV61CE6327HTSA1,BCV61BE6327HTSA1,IRFZ24NS,IRFL014N,IRFR3704Z.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - Special Purpose has 242 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the MOST.
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