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Products Found
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Datasheet
| Mfr. Part #RQA0009SXTL-EMOST Part #391-375-RQA0009SXTL-E | Renesas Electronics Corporation |
Description: 3.2A, 16V, N-CHANNEL, Si, POWER, MOSFET, SC-62, UPAK-3
| Min.:1 Mult.:1 | YES | - | - | 3 | SILICON | - | - | 1 | - | - | - | - | 3.2 A | - | RENESAS ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Active | SC-62 | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | Yes | - | - | EAR99 | - | - | - | - | SINGLE | FLAT | NOT SPECIFIED | - | compliant | NOT SPECIFIED | 3 | R-PSSO-F3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | SOURCE | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | 16 V | METAL-OXIDE SEMICONDUCTOR | 15 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| RQA0009SXTL-E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #2SK1058MOST Part #391-375-2SK1058 | Renesas Electronics Corporation |
Description: 7 A, 160 V, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN
| Min.:1 Mult.:1 | NO | - | - | 3 | SILICON | - | - | 1 | - | SOW8 | 1997-08-01 | - | 7 A | 1 g | RENESAS ELECTRONICS CORP | - | - | - | 5kV | gate driver | reel, | - | - | SMD | - | - | - | - | - | PLASTIC/EPOXY | TO-3P, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | - | - | No | - | - | - | - | - | driver | -40...125°C | - | - | - | - | e0 | No | - | - | EAR99 | - | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | 1 | - | - | ENHANCEMENT MODE | 10A | DRAIN | - | - | - | SWITCHING | N-CHANNEL | - | - | - | - | - | - | - | 160 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| 2SK1058 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #2SK3113MOST Part #391-375-2SK3113 | Renesas Electronics Corporation |
2000mA, 600V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA, TO-251, MP-3, 3 PIN
| Min.:1 Mult.:1 | NO | nickel-plated brass | - | 3 | SILICON | - | - | 1 | ring - cone; flat button | - | - | 2000 (50 Hz / 5 s) V | 2 A | 20.88 | RENESAS ELECTRONICS CORP | greemin | 12 V | ring + pictogram "ON" | - | - | - | ≥40000 hours | - | - | 19 mm | - | ≥50000 | - | 150 °C | PLASTIC/EPOXY | TO-251, MP-3, 3 PIN | RECTANGULAR | IN-LINE | Obsolete | TO-251AA | IP65 | 45...85 % | No | ON-(ON) without fixation | - | 62*27.5*28/250 | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | TIN LEAD | AVALANCHE ENERGY RATED | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | 3 | R-PSIP-T3 | Not Qualified | ≤50 mΩ | SINGLE WITH BUILT-IN DIODE | ≥1000 MΩ | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | Vandal proof button from LAS1-AGQ series with illumination | - | SWITCHING | N-CHANNEL | -25…+55 °C | 5 A | TO-251AA | - | 4.4 Ω | - | - | 600 V | METAL-OXIDE SEMICONDUCTOR | 1 W | - | - | - | - | - | 250 V | - | - | - | - | - | - | - | - | - | - | - | - | - | 3Pin+2Pin | 22 mm | - | ||||
| 2SK3113 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #NE3210S01-T1BMOST Part #391-375-NE3210S01-T1B | Renesas Electronics Corporation |
Description: NE3210S01-T1B
| Min.:1 Mult.:1 | YES | ABS UL94-V0 | - | 4 | SILICON | - | - | 1 | - | - | - | 2500 (50 Hz / 1 min.) V | 0.015 A | 124.50 | RENESAS ELECTRONICS CORP | - | - | - | - | - | - | - | ~90...250 V | - | - | - | - | -40...+80 °C | 125 °C | PLASTIC/EPOXY | MICROWAVE, X-PXMW-G4 | UNSPECIFIED | MICROWAVE | Obsolete | - | - | 35...85 % | Yes | - | - | 42.5*35.5*15/100 | - | - | - | - | - | - | - | - | e0 | Yes | - | - | EAR99 | Single-phase linear solid state relay from the SCR series with fuse | TIN LEAD | - | 8541.21.00.95 | UNSPECIFIED | GULL WING | 230 | 62 mm | compliant | 30 | - | X-PXMW-G4 | Not Qualified | - | SINGLE | ≥100 (at Uinsp.dc=500V) MΩ | - | not more than 0.5% mA | - | DEPLETION MODE | - | SOURCE | - | - | phase control | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | 3 V | HETERO-JUNCTION | - | 25 A | - | - | - | - | - | - | 10x38 mm 10 A | - | - | ≤4-20 mA | - | - | KU BAND | 0.165 W | ≤1.0 ms | - | 12 dB | - | - | - | 35 mm | ||||
| NE3210S01-T1B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #RQK0609CQDQSTL-EMOST Part #391-375-RQK0609CQDQSTL-E | Renesas Electronics Corporation |
4A, 60V, 0.125ohm, N-CHANNEL, Si, POWER, MOSFET, SC-62, UPAK-4
| Min.:1 Mult.:1 | YES | - | - | 3 | SILICON | - | - | 1 | - | - | - | - | 4 A | - | RENESAS ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Active | SC-62 | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e6 | Yes | - | - | EAR99 | - | TIN BISMUTH | - | - | SINGLE | FLAT | - | - | compliant | - | 4 | R-PSSO-F3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | - | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.125 Ω | - | 12 A | 60 V | METAL-OXIDE SEMICONDUCTOR | 1.5 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | ||||
| RQK0609CQDQSTL-E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #2SK317MOST Part #391-375-2SK317 | Renesas Electronics Corporation |
Description: TRANSISTOR,MOSFET,N-CHANNEL,180V V(BR)DSS,8A I(D),SOT-119VAR
| Min.:1 Mult.:1 | NO | - | Round | - | - | Polyethylene Naphthalate (PEN), Polyurethane (PU) | Nd-Fe-B | 1 | - | - | - | - | 8 A | 12.30 | RENESAS ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | Obsolete | - | - | - | - | - | - | 42*28*18.5/500 | - | - | - | - | -25°C ~ 50°C | Bulk | AS | 0.866" Dia (22.00mm) | - | - | Active | None | EAR99 | General Purpose | - | - | - | - | - | - | - | compliant | - | - | - | - | - | SINGLE | - | - | - | 4 Ohms | ENHANCEMENT MODE | - | - | 3.5 W | - | - | - | N-CHANNEL | - | - | - | 0.315" (8.00mm) | - | 300 Hz ~ 20 kHz | - | - | METAL-OXIDE SEMICONDUCTOR | 120 W | - | 3 W | Top | - | - | - | 300Hz | - | 80.00 | Sensitivity | - | - | 1W/500mm | - | - | - | - | - | 5% @ 1kHz, 1W | - | - | - | ||||
| 2SK317 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #2SJ355-T1MOST Part #391-375-2SJ355-T1 | Renesas Electronics Corporation |
2SJ355-T1
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | RENESAS ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| 2SJ355-T1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #PDM505HCMOST Part #391-375-PDM505HC | Nihon Inter Electronics Corporation |
Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7
| Min.:1 Mult.:1 | NO | - | - | 7 | SILICON | - | - | - | - | - | - | - | 35 A | - | NIHON INTER ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | 2 | - | - | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | UPPER | UNSPECIFIED | - | - | unknown | - | 7 | R-XUFM-X7 | Not Qualified | - | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | ISOLATED | - | - | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.12 Ω | - | 100 A | 500 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| PDM505HC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #P2HM1102HMOST Part #391-375-P2HM1102H | Nihon Inter Electronics Corporation |
Power Field-Effect Transistor, 80A I(D), 250V, 0.033ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8
| Min.:1 Mult.:1 | NO | - | - | 8 | SILICON | - | - | - | - | - | - | - | 80 A | - | NIHON INTER ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | 2 | - | - | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | UPPER | UNSPECIFIED | - | - | unknown | - | 8 | R-XUFM-X8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | ISOLATED | - | - | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.033 Ω | - | 220 A | 250 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| P2HM1102H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #P2H10M441LMOST Part #391-375-P2H10M441L | Nihon Inter Electronics Corporation |
Power Field-Effect Transistor, 50A I(D), 450V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8
| Min.:1 Mult.:1 | NO | - | - | 8 | SILICON | - | - | - | - | - | - | - | 50 A | - | NIHON INTER ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | 2 | - | - | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | UPPER | UNSPECIFIED | - | - | unknown | - | 8 | R-XUFM-X8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | ISOLATED | - | - | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.085 Ω | - | 140 A | 450 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| P2H10M441L | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #2N5906MOST Part #391-375-2N5906 | Intersil Corporation |
2N5906
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | - | - | - | - | - | - | - | INTERSIL CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | Obsolete | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | not_compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | JUNCTION | 0.5 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| 2N5906 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #P2H10M440HMOST Part #391-375-P2H10M440H | Nihon Inter Electronics Corporation |
Power Field-Effect Transistor, 60A I(D), 500V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8
| Min.:1 Mult.:1 | NO | - | - | 8 | SILICON | - | - | - | - | - | - | - | 60 A | - | NIHON INTER ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | 2 | - | - | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | UPPER | UNSPECIFIED | - | - | unknown | - | 8 | R-XUFM-X8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | ISOLATED | - | - | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.085 Ω | - | 170 A | 500 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| P2H10M440H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #PD4M441HMOST Part #391-375-PD4M441H | Nihon Inter Electronics Corporation |
Power Field-Effect Transistor, 21A I(D), 450V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
| Min.:1 Mult.:1 | NO | - | - | 7 | SILICON | - | - | - | - | - | - | - | 21 A | - | NIHON INTER ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | 2 | - | - | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | UPPER | UNSPECIFIED | - | - | unknown | - | - | R-XUFM-X7 | Not Qualified | - | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | ISOLATED | - | - | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.21 Ω | - | 60 A | 450 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| PD4M441H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #RFP18N10MOST Part #391-375-RFP18N10 | Intersil Corporation |
Description: 18A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
| 23680
In Stock
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | - | - | - | - | - | 18 A | - | INTERSIL CORP | - | - | - | - | - | - | - | - | - | - | 1 | - | - | 150 °C | - | - | - | - | Obsolete | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | not_compliant | - | - | - | - | - | SINGLE | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 75 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| RFP18N10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #P2H7M440HMOST Part #391-375-P2H7M440H | Nihon Inter Electronics Corporation |
Description: Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8
| Min.:1 Mult.:1 | NO | - | - | 8 | SILICON | - | - | - | - | - | - | - | 35 A | - | NIHON INTER ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | 2 | - | - | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | UPPER | UNSPECIFIED | - | - | unknown | - | 8 | R-XUFM-X8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | ISOLATED | - | - | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.12 Ω | - | 100 A | 500 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| P2H7M440H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #RFD8P06LESM9AMOST Part #391-375-RFD8P06LESM9A | Intersil Corporation |
8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
| Min.:1 Mult.:1 | YES | - | - | 2 | SILICON | - | - | - | - | - | - | - | 8 A | - | INTERSIL CORP | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | SINGLE | GULL WING | - | - | unknown | - | - | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | - | - | SWITCHING | P-CHANNEL | - | - | TO-252AA | - | 0.33 Ω | - | - | 60 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| RFD8P06LESM9A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #RLP1N08LEMOST Part #391-375-RLP1N08LE | Intersil Corporation |
1.5A, 80V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
| 36118
In Stock
| Min.:1 Mult.:1 | NO | - | - | 3 | SILICON | - | - | - | - | - | - | - | 1.5 A | - | INTERSIL CORP | - | - | - | - | - | - | - | - | - | - | 1 | - | - | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | No | - | - | - | 12500 ns | 6500 ns | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | TIN LEAD | CURRENT LIMITING, ESD PROTECTED | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | - | not_compliant | - | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | - | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | - | 0.75 Ω | - | - | 80 V | METAL-OXIDE SEMICONDUCTOR | 75 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 30 W | - | - | - | - | - | - | - | |||
| RLP1N08LE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #RCA423MOST Part #391-375-RCA423 | Intersil Corporation |
RCA423
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | - | - | - | - | - | - | - | HARRIS SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | 1 | - | - | 175 °C | - | , | - | - | Obsolete | - | - | - | No | - | 4 MHz | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | - | 125 W | - | - | - | 7 A | 30 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| RCA423 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #RFL1N10MOST Part #391-375-RFL1N10 | Intersil Corporation |
1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF
| Min.:1 Mult.:1 | NO | - | - | 3 | SILICON | - | - | - | - | - | - | - | 1 A | - | INTERSIL CORP | - | - | - | - | - | - | - | - | - | - | 1 | - | - | 150 °C | METAL | CYLINDRICAL, O-MBCY-W3 | ROUND | CYLINDRICAL | Obsolete | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | TIN LEAD | - | 8541.29.00.95 | BOTTOM | WIRE | - | - | not_compliant | - | - | O-MBCY-W3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | - | - | SWITCHING | N-CHANNEL | - | - | TO-205AF | - | 1.2 Ω | - | - | 100 V | METAL-OXIDE SEMICONDUCTOR | 8.3 W | - | - | - | - | - | - | - | - | - | - | - | 25 pF | - | - | 8.33 W | - | - | - | - | - | - | - | ||||
| RFL1N10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #RF1S530SMMOST Part #391-375-RF1S530SM | Intersil Corporation |
14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
| Min.:1 Mult.:1 | YES | - | - | 2 | SILICON | - | - | - | - | - | - | - | 14 A | - | INTERSIL CORP | - | - | - | - | - | - | - | - | - | - | 1 | - | - | 175 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | SINGLE | GULL WING | - | - | not_compliant | - | - | R-PSSO-G2 | Not Qualified | - | SINGLE | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | - | - | N-CHANNEL | - | - | TO-263AB | - | 0.16 Ω | - | - | 100 V | METAL-OXIDE SEMICONDUCTOR | 79 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
| RF1S530SM |
Transistors - Special Purpose definition: Transistors - Special Purpose Product Listing: RQA0009SXTL-E,2SK1058,2SK3113,NE3210S01-T1B,RQK0609CQDQSTL-E.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - Special Purpose has 121 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the MOST.
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