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Compare Image Part # Manufacturer Description Availability Pricing Quantity RoHS Mounting typeMounting TypeSurface MountMaterialHousing materialWeightNumber of TerminalsTransistor Element MaterialExterior Housing MaterialAllowable deviationBody diameterCharacteristicContact diameterDesign featuresDielectric strengthDrain Current-Max (ID)Forward voltage drop (Vf)Gross weightGross WeightIgnition voltageIhs ManufacturerInstallation hole sizeLamp lifespanMaximum allowable average forward current It(av)Maximum currentMaximum forward currentMaximum Forward CurrentMounting hole sizeMounting methodNameNet WeightNoal currentNoal voltageNominal CurrentNominal voltageNominal VoltageNumber of switching cycles (electrical)Number of Switching Cycles (electrical)Number of switching cycles (mechanical)Operating Temperature-MaxPackage Body MaterialPackage DescriptionPackage ShapePackage StylePart Life Cycle CodePart Package CodePlunger shape/colorProtection classProtection degreePushbutton shape/colorRepetitive impulse reverse voltage VrrmRepetitive Peak Reverse CurrentRepetitive pulse reverse current (Irrm)Rohs CodeService lifeSurge forward currentSwitching schemeSwitching SchemeTeral typeTeralsThreadTransition Frequency-Nom (fT)Transport package size/quantityTransport packaging size/quantityTransport Packaging size/quantityTransport Packaging Size/QuantityVoltage dropVoltage DropWear resistance cyclesOperating temperatureToleranceJESD-609 CodePbfree CodeECCN CodeConnector typeTypeResistanceTerminal FinishAdditional FeatureHTS CodePitchTerminal PositionTerminal FormPeak Reflow Temperature (Cel)DepthReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of contactsDielectricContact resistanceContact ResistanceConfigurationInsulation resistanceInsulation ResistanceOperating ModeCase ConnectionSwitch TypeTransistor ApplicationPolarity/Channel TypeOperating temperature rangeOperating Temperature RangeRated currentRated CurrentSwitching voltageJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinWire cross sectionAvalanche Energy Rating (Eas)FET TechnologyPower Dissipation-Max (Abs)Rotation angleIsolation VoltagePowerCollector Current-Max (IC)DC Current Gain-Min (hFE)Rated VoltageCollector-Emitter Voltage-MaxRepetitive peak reverse voltageRepetitive Peak Reverse VoltageVCEsat-MaxFeedback Cap-Max (Crss)Highest Frequency BandCollector-Base Capacitance-MaxPower Dissipation Ambient-MaxSaturation CurrentFeaturesPower Gain-Min (Gp)TemperatureDegree of protectionDiameterHeightLengthWidth
Compare Image Part # Manufacturer Description Availability Pricing Quantity RoHS Mounting typeMounting TypeSurface MountMaterialHousing materialWeightNumber of TerminalsTransistor Element MaterialExterior Housing MaterialAllowable deviationBody diameterCharacteristicContact diameterDesign featuresDielectric strengthDrain Current-Max (ID)Forward voltage drop (Vf)Gross weightGross WeightIgnition voltageIhs ManufacturerInstallation hole sizeLamp lifespanMaximum allowable average forward current It(av)Maximum currentMaximum forward currentMaximum Forward CurrentMounting hole sizeMounting methodNameNet WeightNoal currentNoal voltageNominal CurrentNominal voltageNominal VoltageNumber of switching cycles (electrical)Number of Switching Cycles (electrical)Number of switching cycles (mechanical)Operating Temperature-MaxPackage Body MaterialPackage DescriptionPackage ShapePackage StylePart Life Cycle CodePart Package CodePlunger shape/colorProtection classProtection degreePushbutton shape/colorRepetitive impulse reverse voltage VrrmRepetitive Peak Reverse CurrentRepetitive pulse reverse current (Irrm)Rohs CodeService lifeSurge forward currentSwitching schemeSwitching SchemeTeral typeTeralsThreadTransition Frequency-Nom (fT)Transport package size/quantityTransport packaging size/quantityTransport Packaging size/quantityTransport Packaging Size/QuantityVoltage dropVoltage DropWear resistance cyclesOperating temperatureToleranceJESD-609 CodePbfree CodeECCN CodeConnector typeTypeResistanceTerminal FinishAdditional FeatureHTS CodePitchTerminal PositionTerminal FormPeak Reflow Temperature (Cel)DepthReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of contactsDielectricContact resistanceContact ResistanceConfigurationInsulation resistanceInsulation ResistanceOperating ModeCase ConnectionSwitch TypeTransistor ApplicationPolarity/Channel TypeOperating temperature rangeOperating Temperature RangeRated currentRated CurrentSwitching voltageJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinWire cross sectionAvalanche Energy Rating (Eas)FET TechnologyPower Dissipation-Max (Abs)Rotation angleIsolation VoltagePowerCollector Current-Max (IC)DC Current Gain-Min (hFE)Rated VoltageCollector-Emitter Voltage-MaxRepetitive peak reverse voltageRepetitive Peak Reverse VoltageVCEsat-MaxFeedback Cap-Max (Crss)Highest Frequency BandCollector-Base Capacitance-MaxPower Dissipation Ambient-MaxSaturation CurrentFeaturesPower Gain-Min (Gp)TemperatureDegree of protectionDiameterHeightLengthWidth
MMBF5484 Datasheet
Mfr. Part #
MMBF5484
MOST Part #
4926-375-MMBF5484
EDI Diodes (Electronic Devices Inc)
Description: Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET
    Min.:1
    Mult.:1
    Terminals (faston) - YES - - 19 g 3 SILICON 1 - - - - - - - - 20.10 - - ELECTRONIC DEVICES INC - - - - 35 A - - - - - - - - - - - - - - PLASTIC/EPOXY - RECTANGULAR SMALL OUTLINE Contact Manufacturer - - - - - - - - - - 400 A - - - - - - - 42*23*24/500 - - 1.2 V - - - - - - EAR99 - diode bridge KBPC series - - - - - DUAL GULL WING - 28 unknown - - R-PDSO-G3 Not Qualified - - - - 1 phase - - DEPLETION MODE - - - N-CHANNEL -55…+125°C - - - - - - - - - - JUNCTION - - - - - - - - 1000 V - - - - - - - - - - - - 11 - 28
    MMBF5484
    MMBF5484

    4926-375-MMBF5484 EDI Diodes (Electronic Devices Inc)
    RoHS :
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    MMBFJ176 Datasheet
    Mfr. Part #
    MMBFJ176
    MOST Part #
    815-375-MMBFJ176
    Texas Instruments
    P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
      Min.:1
      Mult.:1
      - Terminals YES - - - 3 SILICON 1 - - - - - - - - - 214.00 - NATIONAL SEMICONDUCTOR CORP - - - - - 100 A - - - 315 g - - - - - - - - 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PDSO-G3 RECTANGULAR SMALL OUTLINE Transferred - - - - - - 7 mA - No - - - - - - - - - - 56*23*27/100 - - 1.4 V - - - e0 - EAR99 - Three-phase diode bridge series SQL - Tin/Lead (Sn/Pb) - - - DUAL GULL WING - 100 unknown - - R-PDSO-G3 Not Qualified - - - - SINGLE - - DEPLETION MODE - - SWITCHING P-CHANNEL - -40 ~ +150 °C - - - TO-236AB - - - - - JUNCTION 0.35 W - 2500 V - - - - - - 1000 V - 5.5 pF - - - - - - - - - 55 - 60
      MMBFJ176
      MMBFJ176

      815-375-MMBFJ176 Texas Instruments
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      MMBF4416 Datasheet
      Mfr. Part #
      MMBF4416
      MOST Part #
      815-375-MMBF4416
      Texas Instruments
      Description: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB
        Min.:1
        Mult.:1
        - - YES - - - 3 SILICON 1 - - - - - - - - - 44.90 - NATIONAL SEMICONDUCTOR CORP - - - - - - - - - - - - - - - - 100000 min - 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PDSO-G3 RECTANGULAR SMALL OUTLINE Transferred - - - - - - - - No - - - ON-(ON) 3P - - - - - - 54.5*20.5*35.7/500 - - - - - - e0 - EAR99 - - - Tin/Lead (Sn/Pb) - - - DUAL GULL WING - 59.1 (body + plunger) mm unknown - - R-PDSO-G3 Not Qualified - - - 30 mΩ max SINGLE - 100 (at Uins.dc=500 V) MΩ min DEPLETION MODE - Microswitch series LXW5 with roller plunger AMPLIFIER N-CHANNEL - -25...+80 °C - 15 A - TO-236AB - - - - - JUNCTION 0.225 W - - - - - AC: 250 V - - - - 0.9 pF ULTRA HIGH FREQUENCY BAND - - - - - - - - 49.6 mm - 17.6 mm
        MMBF4416
        MMBF4416

        815-375-MMBF4416 Texas Instruments
        RoHS :
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        MMBF5461 Datasheet
        Mfr. Part #
        MMBF5461
        MOST Part #
        4094-375-MMBF5461
        National Semiconductor Corporation
        Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236AB
          Min.:1
          Mult.:1
          - - YES - plastic - 3 SILICON 1 - - pusher travel PTmax = 2 mm - - 1500 (50 Hz, 1 min.) between contacts V - - 69.00 - - NATIONAL SEMICONDUCTOR CORP - - - - - - - - - - - - - AC: 250 V - - - - 150 °C PLASTIC/EPOXY - RECTANGULAR SMALL OUTLINE Transferred - - - IP64 - - - - No - - ON - (ON), SPDT (1 Form C) - - - - - 46*24.5*37.5/200 - - - - - - - - e0 - EAR99 - Railway switch from AZ series with short pusher - Tin/Lead (Sn/Pb) - - - DUAL GULL WING - 49.1 (housing + pusher) mm unknown - - R-PDSO-G3 Not Qualified - - ≤15 (at 6…8 V DC) mOhm - SINGLE ≥100 (at U=dc 500 V) Mohm - DEPLETION MODE - - - P-CHANNEL -20...+60 °C - 10 A - - TO-236AB - - - - - JUNCTION 0.35 W - - - - - - - - - - 2 pF - - - - - - - - - housing - 54 mm - 21.0 mm
          MMBF5461
          MMBF5461

          4094-375-MMBF5461 National Semiconductor Corporation
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          MMBF5484 Datasheet
          Mfr. Part #
          MMBF5484
          MOST Part #
          4094-375-MMBF5484
          National Semiconductor Corporation
          Description: RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB
            Min.:1
            Mult.:1
            - - YES - plastic - 3 SILICON 1 - - lever travel - 5.0mm - - 1500 (50Hz, 1min) between contacts V - - - 63.10 - NATIONAL SEMICONDUCTOR CORP - - - - - - - - - - - - - AC: 250 V - - - - 150 °C PLASTIC/EPOXY - RECTANGULAR SMALL OUTLINE Transferred - - - - - - - - No - - ON - (ON), SPDT (1 Form C) - - - - - - - 46*24.5*37.5/200 - - - - - - e0 - EAR99 - RUICHI AZ series lever track switch with rotating roller (short type) - Tin/Lead (Sn/Pb) - - - DUAL GULL WING - in assembly - 77 mm unknown - - R-PDSO-G3 Not Qualified - - ≤15 (at 6…8V DC) mΩ - SINGLE ≥100 (at Uinsp.dc=500V) MΩ - DEPLETION MODE - - AMPLIFIER N-CHANNEL -20...+60 °C - 10 A - - TO-236AB - - - - - JUNCTION 0.225 W - - - - - - - - - - 1 pF VERY HIGH FREQUENCY BAND - - - - 16 dB - IP64 - housing - 54 mm - 21.4 mm
            MMBF5484
            MMBF5484

            4094-375-MMBF5484 National Semiconductor Corporation
            RoHS :
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            MMBF4416 Datasheet
            Mfr. Part #
            MMBF4416
            MOST Part #
            16664-375-MMBF4416
            Motorola Semiconductor Products
            Transistor
              Min.:1
              Mult.:1
              - - YES - - - - - - - - - - - 1500 V - - 8.75 - - MOTOROLA INC Ø11.8 + Ø5 mm - - 20 A - - - - - - - 12 Vmin - - - - - - 150 °C - - - - Obsolete - - - - - - - - No at least 10000 switching cycles - ON-(OFF), SPST, non-locking - - - - - - 37.5*24*34/1000 - - - - - - - e0 - EAR99 - Pushbutton switch series ASW with pusher - Tin/Lead (Sn/Pb) - - - - - - (total) 68.7 mm unknown - - - - - - ≤50 mΩ - - ≥100 (at Uisolation.dc=500 V) MΩ - - - - - N-CHANNEL -25...+85 - - - - - - - - - - JUNCTION 0.225 W - - - - - - - - - - - - - - - - - - - pusher - 14 mm 34.3 mm - 16 mm
              MMBF4416
              MMBF4416

              16664-375-MMBF4416 Motorola Semiconductor Products
              RoHS :
              Package : -
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              MMBF5461 Datasheet
              Mfr. Part #
              MMBF5461
              MOST Part #
              815-375-MMBF5461
              Texas Instruments
              P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
                Min.:1
                Mult.:1
                - - YES - - - 3 SILICON 1 - - - - - 1000 (50 Hz / 1 min.) - - 1.15 - - NATIONAL SEMICONDUCTOR CORP - - - - - - Ф12 mm - - - - - - - - - - - 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PDSO-G3 RECTANGULAR SMALL OUTLINE Transferred - - - - square 10.3x10.3 mm/ red - - - No - - B: OFF - (ON) (2P) - - - - - - 37*31*25/2000 - - - - - - - e0 - EAR99 - PBS-18 series pushbutton switch - Tin/Lead (Sn/Pb) - - - DUAL GULL WING - 12.4 mm unknown - - R-PDSO-G3 Not Qualified - - 20 mΩ max - SINGLE 500 (500 V, 1 min.) min - DEPLETION MODE - - - P-CHANNEL -25…+85 °C - 25 mA - 50 (AC/DC) V TO-236AB - - - - - JUNCTION 0.35 W - - - - - - - - - - 2 pF - - - - - - - - - 15 mm - 12.4 mm
                MMBF5461
                MMBF5461

                815-375-MMBF5461 Texas Instruments
                RoHS :
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                In Stock : -
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                MMBF5485 Datasheet
                Mfr. Part #
                MMBF5485
                MOST Part #
                815-375-MMBF5485
                Texas Instruments
                UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB
                  Min.:1
                  Mult.:1
                  - - YES - - - 3 SILICON 1 - 17.5 mm - - - 1000 (50 Hz / 1 min.) V - - 3.85 - - NATIONAL SEMICONDUCTOR CORP - - - - - - Ф12 mm - - - 1 (3) Amin - - - - 10000 min - - 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PDSO-G3 RECTANGULAR SMALL OUTLINE Transferred - round / black IP40 - - - - - No - - OFF- (ON) (2P) - - - - - - 39*31*30/1000 - - - - - - - e0 - EAR99 - PBS-32 Series Pushbutton Switch - Tin/Lead (Sn/Pb) - - - DUAL GULL WING - 21.6 mm unknown - - R-PDSO-G3 Not Qualified - - 20 mΩ max - SINGLE 100 (500 V, 1 min.) min - DEPLETION MODE - - AMPLIFIER N-CHANNEL -25…+85 °C - - - - TO-236AB - - - - - JUNCTION 0.35 W - - - - - - - - - - 1 pF ULTRA HIGH FREQUENCY BAND - - - - 10 dB - - - - - -
                  MMBF5485
                  MMBF5485

                  815-375-MMBF5485 Texas Instruments
                  RoHS :
                  Package : -
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                  STK0465F Datasheet
                  Mfr. Part #
                  STK0465F
                  MOST Part #
                  16027-375-STK0465F
                  Kodenshi Corporation
                  Transistor
                    Min.:1
                    Mult.:1
                    - - - - - - - - - - - - - - 500 (50 Hz, 1 min.) V - - 13.52 - - KODENSHI AUK CORP - - - - - - - soldering to board - - through contact -1.5 Amin - - - - - - - - - , - - Obsolete - - - - - - - - - - - - - - - - - - 48*32*22.5/1050 - - - - - -20…+70 °C - - - EAR99 F - socket - - - - - 2.77 x 2.84 (horizontal x vertical) mm - - - 20.0 mm unknown - - - - 15 in two rows - ≤20 mΩ - - ≥1000 (at Uinsp.dc=500 V) MΩ - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - screw mounting - - - - 12.5 (housing) mm - 39.14 ± 0.2 mm
                    STK0465F
                    STK0465F

                    16027-375-STK0465F Kodenshi Corporation
                    RoHS :
                    Package : -
                    In Stock : -
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                    MMBF5486 Datasheet
                    Mfr. Part #
                    MMBF5486
                    MOST Part #
                    16664-375-MMBF5486
                    Motorola Semiconductor Products
                    Transistor
                      Min.:1
                      Mult.:1
                      - - YES - - - - - - - - - - - - - 1.56 V 222.10 - - MOTOROLA INC - - 160 A - allowable impulse (IFM) - 480 A - - - - - - - - - - - - - 150 °C - - - - Obsolete - - - - - 1200 V - 12 mA No - - - - - - - - - 31.5*25.2*24/100 - - - - - - - e0 - EAR99 - power semiconductor diode module of the series МДД - Tin/Lead (Sn/Pb) - - - - - - - unknown - - - - - - - - half-bridge - - - - - - N-CHANNEL - - - - - - - - - - - JUNCTION 0.225 W - - - - - - - - - - - - - - - - - maximum allowable junction (Tjm) - 150 °C - - 29 (case) mm 94 mm 34
                      MMBF5486
                      MMBF5486

                      16664-375-MMBF5486 Motorola Semiconductor Products
                      RoHS :
                      Package : -
                      In Stock : -
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                      IRF1404PBF Datasheet
                      Mfr. Part #
                      IRF1404PBF
                      MOST Part #
                      3717-375-IRF1404PBF
                      International Rectifier
                      Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
                        Min.:1
                        Mult.:1
                        - - NO - - - 3 SILICON 1 - - - - - - 75 A - - - - INTERNATIONAL RECTIFIER CORP - - - - - - - - - - - - - - - - - - 175 °C PLASTIC/EPOXY LEAD FREE, PLASTIC PACKAGE-3 RECTANGULAR FLANGE MOUNT Transferred TO-220AB - - - - - - - Yes - - - - - - - - - - - - - - - - - e3 Yes EAR99 - - - MATTE TIN OVER NICKEL AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE - - SINGLE THROUGH-HOLE - - compliant - 3 R-PSFM-T3 Not Qualified - - - - SINGLE WITH BUILT-IN DIODE - - ENHANCEMENT MODE DRAIN - SWITCHING N-CHANNEL - - - - - TO-220AB 0.004 Ω 808 A 40 V - 620 mJ METAL-OXIDE SEMICONDUCTOR 333 W - - - - - - - - - - - - - - - - - - - - - - -
                        IRF1404PBF
                        IRF1404PBF

                        3717-375-IRF1404PBF International Rectifier
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                        IRFR3411 Datasheet
                        Mfr. Part #
                        IRFR3411
                        MOST Part #
                        3717-375-IRFR3411
                        International Rectifier
                        Description: Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
                          Min.:1
                          Mult.:1
                          - - YES - - - 2 SILICON 1 - - - - - - 32 A - - - - INTERNATIONAL RECTIFIER CORP - - - - - - - - - - - - - - - - - - 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PSSO-G2 RECTANGULAR SMALL OUTLINE Transferred TO-252AA - - - - - - - No - - - - - - - - - - - - - - - - - e0 - EAR99 - - - Tin/Lead (Sn/Pb) AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE - - SINGLE GULL WING 245 - compliant 30 3 R-PSSO-G2 Not Qualified - - - - SINGLE WITH BUILT-IN DIODE - - ENHANCEMENT MODE DRAIN - SWITCHING N-CHANNEL - - - - - TO-252AA 0.044 Ω 110 A 100 V - 185 mJ METAL-OXIDE SEMICONDUCTOR - - - - - - - - - - - - - - - 1 - - - - - - - -
                          IRFR3411
                          IRFR3411

                          3717-375-IRFR3411 International Rectifier
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                          IRFR2905Z Datasheet
                          Mfr. Part #
                          IRFR2905Z
                          MOST Part #
                          3717-375-IRFR2905Z
                          International Rectifier
                          Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
                            Min.:1
                            Mult.:1
                            - - YES - - - 2 SILICON 1 - - - - - - 42 A - 10.98 - - INTERNATIONAL RECTIFIER CORP - - - - - - - - - - - - - - - - - - 175 °C PLASTIC/EPOXY PLASTIC, DPAK-3 RECTANGULAR SMALL OUTLINE Obsolete TO-252AA - - - - - - - No - - - - solderingmin wire (d) Ф0.75min - - - 38*33*25/2000 - - - - - - 5% e0 No EAR99 - Power wirewound constant resistor in ceramic-cement body RX27-1 1.2 kOhm Tin/Lead (Sn/Pb) AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE - - SINGLE GULL WING 245 (L) 48 ± 1 mm compliant 30 3 R-PSSO-G2 Not Qualified - - - - SINGLE WITH BUILT-IN DIODE 1000 MOhm min - ENHANCEMENT MODE DRAIN - SWITCHING N-CHANNEL -55…+155 (275 max.) °C - - - - TO-252AA 0.0145 Ω 240 A 55 V - 82 mJ METAL-OXIDE SEMICONDUCTOR 110 W - - 10 (SQP10) W - - - - - - - - - - - 1 - - - - - (H) 9 ± 1 mm - (W) 10 ± 1 mm
                            IRFR2905Z
                            IRFR2905Z

                            3717-375-IRFR2905Z International Rectifier
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                            In Stock : -
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                            ARF446 Datasheet
                            Mfr. Part #
                            ARF446
                            MOST Part #
                            2957-375-ARF446
                            Advanced Power Technology
                            RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
                              Min.:1
                              Mult.:1
                              - - NO - - - 3 SILICON 1 - - - - - - 6.5 A - - 2.36 - ADVANCED POWER TECHNOLOGY INC - - - - - - - - - - - - - - - - - - 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Transferred - - - - - - - - No - - - - - - - - - - - 48*32*27/3600 - - - - - e0 - EAR99 - - - Tin/Lead (Sn/Pb) HIGH RELIABILITY - - SINGLE THROUGH-HOLE - - unknown - - R-PSFM-T3 Not Qualified - - - - SINGLE - - ENHANCEMENT MODE SOURCE - AMPLIFIER N-CHANNEL - - - - - TO-247AD - - 900 V - - METAL-OXIDE SEMICONDUCTOR 240 W - - - - - - - - - - - VERY HIGH FREQUENCY BAND - - - - - - - - - - -
                              ARF446
                              ARF446

                              2957-375-ARF446 Advanced Power Technology
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                              IRL8113 Datasheet
                              Mfr. Part #
                              IRL8113
                              MOST Part #
                              3717-375-IRL8113
                              International Rectifier
                              Power Field-Effect Transistor, 42A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
                                Min.:1
                                Mult.:1
                                - - NO brass - - 3 SILICON 1 - - screw - nut - - - 42 A - 2.63 - - INTERNATIONAL RECTIFIER CORP - - - - - - - - hexagonal mounting standoff for PCB - - - - - - - - - 175 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Transferred TO-220AB - - - - - - - No - - - - - - M3x0.5 mm - - 28*15.5*14.5/5000 - - - - - - - e0 - EAR99 - - - TIN LEAD - - - SINGLE THROUGH-HOLE - total - 20; standoff - 15 mm compliant - 3 R-PSFM-T3 Not Qualified - - - - SINGLE WITH BUILT-IN DIODE - - ENHANCEMENT MODE DRAIN - SWITCHING N-CHANNEL - - - - - TO-220AB 0.006 Ω 420 A 30 V - 220 mJ METAL-OXIDE SEMICONDUCTOR 110 W - - - - - - - - - - - - - - - - - - - ~5 mm - threaded part shaft / hole ~ 5/ 5 mm -
                                IRL8113
                                IRL8113

                                3717-375-IRL8113 International Rectifier
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                                ARF460A Datasheet
                                Mfr. Part #
                                ARF460A
                                MOST Part #
                                2957-375-ARF460A
                                Advanced Power Technology
                                Description: RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
                                  Min.:1
                                  Mult.:1
                                  - - NO - - - 3 SILICON 1 - - - - - - 14 A - 0.35 - 55 (AC)/78 (DC) V ADVANCED POWER TECHNOLOGY INC - ≥30000 hours - - - - - - - - - - - - - - - - 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Transferred - - - - - - - - No - - - - - - - - - 42*28*23.5/30000 - - - - - - - e0 - EAR99 - miniature neon lamp current-limiting - 150 (110 V); 560 (220 V) kOhm Tin/Lead (Sn/Pb) - - - SINGLE THROUGH-HOLE - 13 mm unknown - - R-PSFM-T3 Not Qualified - - - - SINGLE - - ENHANCEMENT MODE SOURCE - AMPLIFIER N-CHANNEL - - 0.35 mA - - TO-247AD - - 500 V - - METAL-OXIDE SEMICONDUCTOR 250 W - - - - - - - - - - - VERY HIGH FREQUENCY BAND - - - - - - - 5 mm - - -
                                  ARF460A
                                  ARF460A

                                  2957-375-ARF460A Advanced Power Technology
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                                  2SC2655 Datasheet
                                  Mfr. Part #
                                  2SC2655
                                  MOST Part #
                                  16028-375-2SC2655
                                  Jiangsu Changjiang Electronics Technology Co Ltd
                                  Transistor
                                    Min.:1
                                    Mult.:1
                                    - - NO - - - 3 SILICON 1 ± 10 % - - - - 900 V - - 0.61 - - JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD - - - - - - - - - - - - - - - - - - 150 °C PLASTIC/EPOXY TO-92L, 3 PIN ROUND CYLINDRICAL Contact Manufacturer - - - - - - - - - - - - - - - - 100 MHz - 42*28*23.5/3000 - - - - 200 times - - - - EAR99 - trimmer resistor series 3362W 5 (max) kOhm - - 8541.21.00.95 - BOTTOM WIRE - 4.7 mm unknown - - O-PBCY-W3 - - - - - SINGLE ≥1000 (at Uinsp.dc=500 V) V - - - - SWITCHING NPN -55 …+125 °C - - - - TO-92 - - - - - - 0.9 W 210 ± 10 * ° - maximum dissipated - 0.5 W 2 A 40 - 50 V - - 0.5 V - - 30 pF 0.9 W - - - - - - 6.99 (housing) mm - 6.6 mm
                                    2SC2655
                                    2SC2655

                                    16028-375-2SC2655 Jiangsu Changjiang Electronics Technology Co Ltd
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                                    IRFR3708TRPBF Datasheet
                                    Mfr. Part #
                                    IRFR3708TRPBF
                                    MOST Part #
                                    3717-375-IRFR3708TRPBF
                                    International Rectifier
                                    Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
                                      Min.:1
                                      Mult.:1
                                      - - YES tinned brass - - 2 SILICON 1 - - - inner d2 = 4.3 mm/ outer B = 8.5 mm - - 30 A - 0.73 - - INTERNATIONAL RECTIFIER CORP - - - 27 A - - - - - - - - - - - - - - 175 °C PLASTIC/EPOXY LEAD FREE, PLASTIC, DPAK-3 RECTANGULAR SMALL OUTLINE Transferred TO-252AA - - - - - - - Yes - - - - - - - - 47*34*21.5/5000 - - - - - - - - e3 Yes EAR99 - insulated ring terminal type "O" - Matte Tin (Sn) - with Nickel (Ni) barrier - - - SINGLE GULL WING 260 L - 22.5 mm not_compliant 30 3 R-PSSO-G2 Not Qualified - PVC (color - red) - - SINGLE WITH BUILT-IN DIODE - - ENHANCEMENT MODE DRAIN - SWITCHING N-CHANNEL - - - - - TO-252AA 0.0125 Ω 244 A 30 V 16-14 AWG; 1.5…2.5 mm2 213 mJ METAL-OXIDE SEMICONDUCTOR 87 W - - - - - - - - - - - - - - 1 - - - - - - insulator - 10 mm (diameter D - Ф4.9 mm) mm -
                                      IRFR3708TRPBF
                                      IRFR3708TRPBF

                                      3717-375-IRFR3708TRPBF International Rectifier
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                                      BCX52 Datasheet
                                      Mfr. Part #
                                      BCX52
                                      MOST Part #
                                      16045-375-BCX52
                                      Secos Corporation
                                      Transistor
                                        Min.:1
                                        Mult.:1
                                        - - - - - - - - - - - - - lever extension FP/ OP - 15.3/ 12.1 ±1.5 mm 1000 (50 Hz, 1 min.) V - - 2.57 - - SECOS CORP - - - - - - - - - - - - 3 A - AC: 250/ 125 V 100,000 min - 5,000,000 min - - - - - Active - - - - - - - - - - - - ON-(ON) SPDT 3P - - - - - 42*28*18.5/2800 - - - - - - - - - EAR99 - - - - - - - - - - 19.8 (body) mm compliant - - - - - - 50 mOhm max - - 100 (at Uinsp.dc=500 V) MOhm min - - - Lever type microswitch SM5 series - - -25...+120 °C - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 10.6 (body) mm - 6.3 mm
                                        BCX52
                                        BCX52

                                        16045-375-BCX52 Secos Corporation
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                                        BCX52 Datasheet
                                        Mfr. Part #
                                        BCX52
                                        MOST Part #
                                        16059-375-BCX52
                                        North American Philips Discrete Products Div
                                        Transistor,
                                          Min.:1
                                          Mult.:1
                                          - - YES - - - - - 1 - - - - - - - - - - - NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV - - - - - - - - - - - - - - - - - - 140 °C - - - - Transferred - - - - - - - - No - - - - - - - 50 MHz - - - - - - - - - e0 - EAR99 - - - Tin/Lead (Sn/Pb) - - - - - - - unknown - - - - - - - - SINGLE - - - - - - PNP - - - - - - - - - - - - 1 W - - - 1 A 40 - - - - - - - - - - - - - - - - - -
                                          BCX52
                                          BCX52

                                          16059-375-BCX52 North American Philips Discrete Products Div
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                                          Transistors - Special Purpose definition: Transistors - Special Purpose Product Listing: MMBF5484,MMBFJ176,MMBF4416,MMBF5461,MMBF5484.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - Special Purpose has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the MOST.

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