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Products Found
| Compare | Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Memory Types | Operating Temperature | Packaging | Published | Series | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Max Operating Temperature | Min Operating Temperature | Voltage - Supply | Terminal Position | Number of Functions | Supply Voltage | Terminal Pitch | Frequency | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Interface | Memory Size | Operating Mode | Clock Frequency | Access Time | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Programming Voltage | Height Seated (Max) | Length | Width | RoHS Status |
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Datasheet
| Mfr. Part #HTEE25608DMOST Part #353-535-HTEE25608D | Honeywell Aerospace |
IC EEPROM 256KBIT PARA/SPI 56PGA
| Min.:1 Mult.:1 | 19 Weeks | Through Hole | 56-BCPGA | NO | 56 | - | Non-Volatile | -55°C~225°C TA | Tube | 2013 | - | Active | 1 (Unlimited) | 56 | - | - | 4.75V~5.25V | PERPENDICULAR | 1 | 5V | 2.54mm | - | 5.25V | 4.75V | Parallel, Serial | 256Kb 32K x 8 | SYNCHRONOUS | 5MHz | 150ns | EEPROM | Parallel, SPI | 32KX8 | 8 | 90ms | 262144 bit | 5V | 6.8mm | 38.1mm | 19.05mm | RoHS Compliant | ||||
| HTEE25608D | ||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet
| Mfr. Part #HTEE25608MOST Part #353-535-HTEE25608 | Honeywell Aerospace |
IC EEPROM 256KBIT PARA/SPI 56PGA
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | 56-BCPGA | - | 56 | 56-CPGA | Non-Volatile | -55°C~225°C TA | Bulk | 2013 | - | Active | 1 (Unlimited) | - | 225°C | -55°C | 4.75V~5.25V | - | - | - | - | - | - | - | Parallel, Serial | 256Kb 32K x 8 | - | 5MHz | 150ns | EEPROM | Parallel, SPI | - | - | 90ms | - | - | - | - | - | RoHS Compliant | ||||
| HTEE25608 | ||||||||||||||||||||||||||||||||||||||||||||||||
Datasheet
| Mfr. Part #HT6256DCMOST Part #353-535-HT6256DC | Honeywell Aerospace |
IC SRAM 256K PARALLEL 28CDIP
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | 28-CDIP (0.600, 15.24mm) | - | - | 28-CDIP | Volatile | -55°C~225°C TA | Bulk | 2012 | HTMOS™ | Active | 1 (Unlimited) | - | 225°C | -55°C | 4.5V~5.5V | - | - | - | - | 20MHz | - | - | Parallel | 256Kb 32K x 8 | - | 20MHz | 50ns | SRAM | Parallel | - | - | 50ns | - | - | - | - | - | Non-RoHS Compliant | ||||
| HT6256DC |
Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: HTEE25608D,HTEE25608,HT6256DC.Integrated Circuits (ICs) type:Embedded - Microcontrollers(134263),Memory(116337),PMIC - Voltage Regulators - Linear(107072),PMIC - Supervisors(101983),Embedded - FPGAs (Field Programmable Gate Array)(62862) .Memory has 3 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the MOST.
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