DMTH10H017LPDQ-13 Tech Specifications

Diodes  DMTH10H017LPDQ-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Diodes
Package / Case PowerDI5060-8
Mounting Type Surface Mount
Supplier Device Package PowerDI5060-8 (Type E)
Vds - Drain-Source Breakdown Voltage 100 V
Typical Turn-On Delay Time 9.8 ns
Vgs th - Gate-Source Threshold Voltage 3 V
Pd - Power Dissipation 1.5 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Unit Weight 0.003422 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 2500
Mounting Styles SMD/SMT
Channel Mode Enhancement
Manufacturer Diodes Incorporated
Brand Diodes Incorporated
Qg - Gate Charge 28.6 nC
Rds On - Drain-Source Resistance 17.4 mOhms
Typical Turn-Off Delay Time 32.6 ns
Id - Continuous Drain Current 59 A
Package Tape & Reel (TR)
Product Attribute Attribute Value
Base Product Number DMTH10H017
Current - Continuous Drain (Id) @ 25℃ 13A (Ta), 59A (Tc)
Mfr Diodes Incorporated
Product Status Active
Packaging Cut Tape
Operating Temperature -55°C ~ 175°C (TJ)
Series Automotive, AEC-Q101
Subcategory MOSFETs
Technology Si
Configuration Dual
Number of Channels 2 ChannelChannel
Power - Max 1.5W (Ta), 93W (Tc)
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 17.4mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 1986pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 28.6nC @ 10V
Rise Time 16.3 ns
Drain to Source Voltage (Vdss) 100V
Product Type MOSFET
Transistor Type 1 N-Channel
Channel Type Dual N
FET Feature Standard
Product Category MOSFET
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DMTH10H017LPDQ-13 Comments

109 reviews

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2021-06-11 00:00:00

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