Diodes Incorporated DMG1012T-7 Single MOSFETs Transistors 630mA 300mOhm
DMG1012T-7
671-369-DMG1012T-7
SOT-523
RoHS Compliant
Continuous Drain Current (ID): 630mA,Drain to Source Resistance: 300mOhm
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DMG1012T-7 Tech Specifications
Diodes DMG1012T-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Diodes | |
| Factory Lead Time | 14 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-523 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | SOT-523 | |
| Weight | 2.012816mg | |
| Current - Continuous Drain (Id) @ 25℃ | 630mA Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V 4.5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 280mW Ta | |
| Turn Off Delay Time | 26.7 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Resistance | 400MOhm | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Number of Channels | 1Channel | |
| Element Configuration | Single |
| Product Attribute | Attribute Value | |
|---|---|---|
| Power Dissipation | 280mW | |
| Turn On Delay Time | 5.1 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 600mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 60.67pF @ 16V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.74nC @ 4.5V | |
| Rise Time | 7.4ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Vgs (Max) | ±6V | |
| Fall Time (Typ) | 12.3 ns | |
| Continuous Drain Current (ID) | 630mA | |
| Threshold Voltage | 1V | |
| Gate to Source Voltage (Vgs) | 6V | |
| Drain to Source Breakdown Voltage | 20V | |
| Input Capacitance | 60.67pF | |
| Drain to Source Resistance | 300mOhm | |
| Rds On Max | 400 mΩ | |
| Height | 800μm | |
| Length | 1.7mm | |
| Width | 850μm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
DMG1012T-7 Documents
Download datasheets and manufacturer documentation for DMG1012T-7
Environmental Information
Diodes RoHS 3 CertPCN Assembly/Origin
Mult Dev Assembly Add 7/Dec/2018 Mult Dev Wafer Chgs 4/Oct/2019Datasheets
DMG1012TPCN Design/Specification
Bond Wire 11/Nov/2011
Others include "DMG10" parts
The following parts include 'DMG10'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| DMG1012T-7 | Diodes Incorporated | SOT-523 | 16500 |
| DMG1012T-13 | Diodes Incorporated | SOT-523 | 13823 |
| DMG1012TQ-7 | Diodes Incorporated | SOT-523 | 1880 |
| DMG1012TQ-7-52 | Diodes | SOT-523 |
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|---|---|---|---|---|---|
 | DMG1012T-7 | Diodes Incorporated | MOSFET N-CH 20V 630MA SOT-523 | SOT-523 | |
| DMG1013T-7 | Diodes Incorporated | P-Channel 20 V 0.7 Ohm 0.27 W Enhancement Mode Mosfet - SOT-523 | SOT-523 | |
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DMG1012T-7 Comments
109 reviews
2024-03-06 00:00:00
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2024-03-04 15:56:56
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2024-01-24 00:00:00
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2024-01-12 00:00:00
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2024-01-10 00:00:00
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2024-01-03 00:00:00
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2023-11-28 00:00:00
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2023-11-22 00:00:00
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2023-11-21 00:00:00
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