BFP740FESDE6327XT Tech Specifications

Infineon  BFP740FESDE6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Material SiGe
EU RoHS Compliant
ECCN (US) EAR99
Automotive Yes
PPAP Unknown
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 4.9
Maximum Collector-Emitter Voltage (V) 4.2
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum DC Collector Current (A) 0.045
Maximum DC Collector Current Range (A) 0.001 to 0.06
Maximum Emitter Cut-Off Current (nA) 10000
Maximum Collector Cut-Off Current (nA) 400
Operational Bias Conditions 3V/25mA
Minimum DC Current Gain 160@25mA@3V
Minimum DC Current Gain Range 120 to 200
Typical Input Capacitance (pF) 0.5
Typical Output Capacitance (pF) 0.08
Product Attribute Attribute Value
Maximum Power Dissipation (mW) 160
Maximum Power 1dB Compression (dBm) 10(Typ)
Typical Power Gain (dB) 39
Maximum 3rd Order Intercept Point (dBm) 24.5(Typ)
Maximum Transition Frequency (MHz) 47000(Typ)
Maximum Noise Figure (dB) 1.45(Min)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 0.55
Package Width 0.8
Package Length 1.4
PCB changed 4
Standard Package Name TSFP
Supplier Package TSFP
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Pin Count 4
Configuration Single Dual Emitter
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BFP740ESDH6327XTSA1 Infineon Technologies SC-82A, SOT-343 25490
BFP740FH6327XTSA1 Infineon Technologies 4-SMD, Flat Leads 3096
BFP740E6327HTSA1 Infineon Technologies SC-82A, SOT-343
BFP740FESDE6327XT Infineon -
BFP740E6327XT Infineon -
BFP 740FESD E6327 Infineon Technologies 4-SMD, Flat Leads
BFP 740F E6327 Infineon Technologies 4-SMD, Flat Leads

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BFP740FESDE6327XT Comments

109 reviews

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2020-11-11 00:00:00

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2020-10-20 00:00:00

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2020-10-09 00:00:00

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2020-09-28 00:00:00

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2020-09-18 00:00:00

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2020-07-03 00:00:00

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