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- BCR35PNH6327XTSA1
Infineon Technologies BCR35PNH6327XTSA1 BJT Transistors Arrays
BCR35PNH6327XTSA1
1211-363-BCR35PNH6327XTSA1
6-VSSOP, SC-88, SOT-363
RoHS Compliant
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R
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BCR35PNH6327XTSA1 Tech Specifications
Infineon BCR35PNH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Manufacturer | Infineon | |
| Factory Lead Time | 26 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-VSSOP, SC-88, SOT-363 | |
| Number of Pins | 6Pins | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Collector-Emitter Saturation Voltage | 300mV | |
| Number of Elements | 2 Elements | |
| hFEMin | 70 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2011 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -65°C | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 4.7 | |
| Max Power Dissipation | 250mW | |
| Terminal Form | GULL WING |
| Product Attribute | Attribute Value | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BCR35PN | |
| Pin Count | 6 | |
| Reference Standard | AEC-Q101 | |
| Polarity | NPN, PNP | |
| Element Configuration | Dual | |
| Transistor Application | SWITCHING | |
| Halogen Free | Halogen Free | |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA | |
| Transition Frequency | 150MHz | |
| Max Breakdown Voltage | 50V | |
| Frequency - Transition | 150MHz | |
| Resistor - Base (R1) | 10k Ω | |
| Resistor - Emitter Base (R2) | 47k Ω | |
| Height | 800μm | |
| Length | 2mm | |
| Width | 1.25mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
BCR35PNH6327XTSA1 Documents
Download datasheets and manufacturer documentation for BCR35PNH6327XTSA1
PCN Obsolescence/ EOL
Multi Device EOL 4/Feb/2016 Mult Dev EOL 17/Dec/2018 Mult Dev LTB Rev 17/Dec/2018Datasheets
BCR35PN BCR35PNH6327XTSA1-Infineon-datasheet-11836137.pdf BCR35PN-Infineon-datasheet-10847013.pdfOther Related Documents
Part Number GuidePCN Packaging
Reel Cover Tape Chg 16/Feb/2016ConflictMineralStatement
Infineon-company-51.pdf
Others include "BCR35" parts
The following parts include 'BCR35'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| BCR35PNH6327XTSA1 | Infineon Technologies | 6-VSSOP, SC-88, SOT-363 | 16980 |
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Alternate Products
| Part # | Manufacturer | Description | Package | RoHS | |
|---|---|---|---|---|---|
 | BCR35PNH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R | 6-VSSOP, SC-88, SOT-363 | |
 | MUN5212DW1T1 | ON Semiconductor | TRANS 2NPN PREBIAS 0.25W SOT363 | 6-TSSOP, SC-88, SOT-363 | |
 | MUN5237DW1T1 | ON Semiconductor | TRANS 2NPN PREBIAS 0.25W SOT363 | 6-TSSOP, SC-88, SOT-363 | |
| MUN5216DW1T1 | ON Semiconductor | TRANS 2NPN PREBIAS 0.25W SOT363 | 6-TSSOP, SC-88, SOT-363 | |
| MUN5235DW1T1 | ON Semiconductor | TRANS 2NPN PREBIAS 0.25W SOT363 | 6-TSSOP, SC-88, SOT-363 |
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BCR35PNH6327XTSA1 Comments
109 reviews
2024-03-06 00:00:00
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2024-03-04 15:56:56
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2024-02-21 00:00:00
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2024-01-24 00:00:00
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2024-01-12 00:00:00
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2024-01-10 00:00:00
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2024-01-03 00:00:00
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2023-11-28 00:00:00
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2023-11-22 00:00:00
I have purchased electronic components from jakelectronic several times and found that the quality of their products is consistent.
2023-11-21 00:00:00
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