IPAW60R280CEXKSA1 Tech Specifications

Infineon  IPAW60R280CEXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Variant
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 19.3A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 32W Tc
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series CoolMOS™
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Product Attribute Attribute Value
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 430μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Continuous Drain Current (ID) 19.3A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.28Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 284 mJ
FET Feature Super Junction
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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IPAW60R280CEXKSA1 Documents

Download datasheets and manufacturer documentation for   IPAW60R280CEXKSA1

Others include   "IPAW6"   parts

The following parts include  'IPAW6'

Part # Manufacturer Package Availability
IPAW60R280CEXKSA1 Infineon Technologies TO-220-3 Full Pack, Variant

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IPAW60R280CEXKSA1 Comments

109 reviews

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2020-11-11 00:00:00

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2020-10-20 00:00:00

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