IPB200N25N3GATMA1 Tech Specifications

Infineon  IPB200N25N3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 13 Weeks
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 64A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Turn Off Delay Time 45 ns
Power Dissipation (Max) 300W Tc
Number of Elements 1 Element
Published 2008
Series OptiMOS™
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Product Attribute Attribute Value
Pin Count 4
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 64A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 20ns
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 64A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 250V
Drain-source On Resistance-Max 0.02Ohm
Pulsed Drain Current-Max (IDM) 256A
RoHS Status ROHS3 Compliant
Radiation Hardening No
Lead Free Contains Lead
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IPB200N25N3GATMA1 Documents

Download datasheets and manufacturer documentation for   IPB200N25N3GATMA1

Others include   "IPB20"   parts

The following parts include  'IPB20'

Part # Manufacturer Package Availability
IPB200N25N3GATMA1 Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 18689
IPB200N15N3 Infineon TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB200N15N3GATMA1 Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 1000
IPB200N25N3 G Infineon Technologies AG - 8000

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IPB200N25N3GATMA1 Infineon Technologies Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) TO-263 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB8441 ON Semiconductor Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB8832 ON Semiconductor MOSFET N-CH 30V 80A D2PAK TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB108N15N3GATMA1 Infineon Technologies Trans MOSFET N-CH 150V 83A 3-Pin(2+Tab) TO-263 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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IPB200N25N3GATMA1 Comments

109 reviews

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2020-11-11 00:00:00

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2020-10-20 00:00:00

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2020-10-09 00:00:00

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2020-09-28 00:00:00

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2020-07-03 00:00:00

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2020-06-17 00:00:00

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