Infineon Technologies IPD122N10N3GBTMA1 Single MOSFETs Transistors 236A
IPD122N10N3GBTMA1
1211-369-IPD122N10N3GBTMA1
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Compliant
Pulsed Drain Current-Max (IDM): 236A
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IPD122N10N3GBTMA1 Tech Specifications
Infineon IPD122N10N3GBTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 59A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 94W Tc | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | OptiMOS™ | |
| Published | 2011 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant |
| Product Attribute | Attribute Value | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 12.2m Ω @ 46A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 46μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 50V | |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V | |
| Drain to Source Voltage (Vdss) | 100V | |
| Vgs (Max) | ±20V | |
| JEDEC-95 Code | TO-252AA | |
| Drain Current-Max (Abs) (ID) | 59A | |
| Drain-source On Resistance-Max | 0.0122Ohm | |
| Pulsed Drain Current-Max (IDM) | 236A | |
| DS Breakdown Voltage-Min | 100V | |
| Avalanche Energy Rating (Eas) | 70 mJ | |
| RoHS Status | RoHS Compliant |
IPD122N10N3GBTMA1 Documents
Download datasheets and manufacturer documentation for IPD122N10N3GBTMA1
Datasheets
IPD122N10N3 GOther Related Documents
Part Number GuidePCN Obsolescence/ EOL
Mult Dev EOL 20/Oct/2015PCN Packaging
Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015
Others include "IPD12" parts
The following parts include 'IPD12'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| IPD122N10N3GATMA1 | Infineon Technologies | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10000 |
| IPD12CN10NGATMA1 | Infineon Technologies | TO-252-3, DPak (2 Leads + Tab), SC-63 | 208 |
| IPD12N03LB G | Infineon Technologies | TO-252-3, DPak (2 Leads + Tab), SC-63 | 23200 |
| IPD12CN10N | Infineon | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1872 |
| IPD126N10NF2SATMA1 | Infineon Technologies | - | |
| IPD127N06LGBTMA1 | Infineon Technologies | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IPD127N06LGXT | Infineon | - | |
| IPD122N10N3GBTMA1 | Infineon Technologies | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IPD12CN10NGBUMA1 | Infineon Technologies | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IPD12CNE8N G | Infineon Technologies | TO-252-3, DPak (2 Leads + Tab), SC-63 | 38658 |
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IPD122N10N3GBTMA1 Comments
109 reviews
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