Infineon Technologies IPD30N06S223ATMA2 Single MOSFETs Transistors 120A 30A
IPD30N06S223ATMA2
1211-369-IPD30N06S223ATMA2
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Compliant
Pulsed Drain Current-Max (IDM): 120A,Continuous Drain Current (ID): 30A
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IPD30N06S223ATMA2 Tech Specifications
Infineon IPD30N06S223ATMA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon | |
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 30A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 100W Tc | |
| Turn Off Delay Time | 24 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | OptiMOS™ | |
| Published | 2006 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE |
| Product Attribute | Attribute Value | |
|---|---|---|
| Terminal Form | GULL WING | |
| JESD-30 Code | R-PSSO-G2 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 10 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 23m Ω @ 21A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 50μA | |
| Halogen Free | Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | 901pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V | |
| Rise Time | 23ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 18 ns | |
| Continuous Drain Current (ID) | 30A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Max Dual Supply Voltage | 55V | |
| Pulsed Drain Current-Max (IDM) | 120A | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead |
IPD30N06S223ATMA2 Documents
Download datasheets and manufacturer documentation for IPD30N06S223ATMA2
PCN Packaging
Mult Dev Pkg Box Chg 3/Jan/2018PCN Assembly/Origin
Mult Dev Wafer Fab 12/Feb/2019Datasheets
IPD30N06S2-23Other Related Documents
Part Number GuideSimulation Models
OptimOS Spice ModelConflictMineralStatement
Infineon-company-51.pdf
Others include "IPD30" parts
The following parts include 'IPD30'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| IPD30N06S223ATMA2 | Infineon Technologies | TO-252-3, DPak (2 Leads + Tab), SC-63 | 88888 |
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| Part # | Manufacturer | Description | Package | RoHS | |
|---|---|---|---|---|---|
 | IPD30N06S223ATMA2 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
 | FDD5680 | ON Semiconductor | MOSFET N-Ch PowerTrench | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IRFR4105ZTRPBF | Infineon Technologies | MOSFET N-CH 55V 30A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| AUIRFR4105Z | Infineon Technologies | MOSFET N-CH 55V 30A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IPD30N06S223ATMA2 Comments
109 reviews
2024-03-06 00:00:00
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2024-03-04 15:56:56
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2024-02-21 00:00:00
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2024-01-24 00:00:00
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2024-01-12 00:00:00
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2024-01-10 00:00:00
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2024-01-03 00:00:00
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2023-11-28 00:00:00
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2023-11-22 00:00:00
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2023-11-21 00:00:00
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