Infineon Technologies IPD60R950C6ATMA1 Single MOSFETs Transistors 4.4A
IPD60R950C6ATMA1
1211-369-IPD60R950C6ATMA1
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Compliant
Continuous Drain Current (ID): 4.4A
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IPD60R950C6ATMA1 Tech Specifications
Infineon IPD60R950C6ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon | |
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Weight | 3.949996g | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 4.4A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 37W Tc | |
| Turn Off Delay Time | 60 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | CoolMOS™ C6 | |
| Published | 2008 | |
| JESD-609 Code | e3 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant |
| Product Attribute | Attribute Value | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 37W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 10 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 950m Ω @ 1.5A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 130μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 100V | |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V | |
| Rise Time | 8ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 13 ns | |
| Continuous Drain Current (ID) | 4.4A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Max Dual Supply Voltage | 600V | |
| Drain-source On Resistance-Max | 0.95Ohm | |
| Drain to Source Breakdown Voltage | 600V | |
| Avalanche Energy Rating (Eas) | 46 mJ | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
IPD60R950C6ATMA1 Documents
Download datasheets and manufacturer documentation for IPD60R950C6ATMA1
PCN Packaging
Mult Dev Pkg Box Chg 3/Jan/2018 Cover Tape Width Cancellation 14/Jul/2015Datasheets
IPx60R950C6Other Related Documents
Part Number GuideSimulation Models
CoolMOS? Power MOSFET 600V C6 Spice ModelConflictMineralStatement
Infineon-company-51.pdf
Others include "IPD60" parts
The following parts include 'IPD60'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| IPD60R950C6ATMA1 | Infineon Technologies | TO-252-3, DPak (2 Leads + Tab), SC-63 | 480000 |
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| Part # | Manufacturer | Description | Package | RoHS | |
|---|---|---|---|---|---|
 | IPD60R950C6ATMA1 | Infineon Technologies | INFINEON IPD60R950C6 Power MOSFET, N Channel, 4.4 A, 600 V, 0.86 ohm, 10 V, 3 V | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
 | STD9N65M2 | STMicroelectronics | STMICROELECTRONICS STD9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
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IPD60R950C6ATMA1 Comments
109 reviews
2024-03-06 00:00:00
I've recommended jakelectronics to my colleagues
2024-03-04 15:56:56
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2024-02-21 00:00:00
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2024-01-24 00:00:00
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2024-01-12 00:00:00
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2024-01-10 00:00:00
Excellent seller, always ready to help.
2024-01-03 00:00:00
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2023-11-28 00:00:00
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2023-11-22 00:00:00
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2023-11-21 00:00:00
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