IRFS4310TRLPBF Tech Specifications

Infineon  IRFS4310TRLPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 130A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 68 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 7MOhm
Voltage - Rated DC 100V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 140A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Product Attribute Attribute Value
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 26 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7670pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Rise Time 110ns
Vgs (Max) ±20V
Fall Time (Typ) 78 ns
Continuous Drain Current (ID) 140A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 550A
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 980 mJ
Recovery Time 68 ns
Nominal Vgs 4 V
Height 4.826mm
Length 10.668mm
Width 9.65mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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IRFS4310TRLPBF Documents

Download datasheets and manufacturer documentation for   IRFS4310TRLPBF

Others include   "IRFS4"   parts

The following parts include  'IRFS4'

Part # Manufacturer Package Availability
IRFS4321TRLPBF Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4800
IRFS4227TRLPBF Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 2000
IRFS4127TRLPBF Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 120000
IRFS4310ZTRLPBF Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 16854
IRFS4410ZTRLPBF Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4681
IRFS4115TRLPBF Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 1721
IRFS4310TRLPBF Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 66
IRFS4610TRLPBF Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 3200
IRFS4229TRLPBF Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 1
IRFS4615TRLPBF Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 8000

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Part # Manufacturer Description Package RoHS
IRFS4310TRLPBF Infineon Technologies MOSFET N-CH 100V 130A D2PAK TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS4310ZTRLPBF Infineon Technologies MOSFET N-CH 100V 120A D2PAK TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB088N08 ON Semiconductor FAIRCHILD SEMICONDUCTOR FDB088N08 MOSFET Transistor, N Channel, 120 A, 75 V, 0.0073 ohm, 10 V, 2 V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS4310ZPBF Infineon Technologies MOSFET N-CH 100V 120A D2PAK TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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IRFS4310TRLPBF Comments

109 reviews

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