IRFZ34E Tech Specifications

Infineon  IRFZ34E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 28A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 68W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Product Attribute Attribute Value
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 42m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 28A
Drain-source On Resistance-Max 0.042Ohm
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 65 mJ
RoHS Status Non-RoHS Compliant
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IRFZ34E Documents

Download datasheets and manufacturer documentation for   IRFZ34E

Others include   "IRFZ3"   parts

The following parts include  'IRFZ3'

Part # Manufacturer Package Availability
IRFZ34E Infineon Technologies TO-220-3 36688
IRFZ34EPBF Infineon Technologies TO-220-3

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109 reviews

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2021-06-11 00:00:00

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2021-06-10 00:00:00

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2021-03-12 00:00:00

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