IRG4BC20UDPBF Tech Specifications

Infineon  IRG4BC20UDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - IGBTs - Single
Manufacturer Infineon
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.1V
Number of Elements 1 Element
Test Conditions 480V, 6.5A, 50 Ω, 15V
Turn Off Delay Time 93 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 60W
Current Rating 13A
Element Configuration Single
Power Dissipation 60W
Case Connection COLLECTOR
Product Attribute Attribute Value
Input Type Standard
Turn On Delay Time 39 ns
Transistor Application POWER CONTROL
Rise Time 15ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 13A
Reverse Recovery Time 37 ns
JEDEC-95 Code TO-220AB
Turn On Time 55 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6.5A
Turn Off Time-Nom (toff) 320 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 39ns/93ns
Switching Energy 160μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 170ns
Height 16.51mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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IRG4BC20UDPBF Documents

Download datasheets and manufacturer documentation for   IRG4BC20UDPBF

Others include   "IRG4B"   parts

The following parts include  'IRG4B'

Part # Manufacturer Package Availability
IRG4BC20UDPBF Infineon Technologies TO-220-3 33

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IRG4BC20UDPBF Comments

109 reviews

Bradley
2021-06-11 00:00:00

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2021-06-10 00:00:00

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