IXFR12N100F Tech Specifications

IXYS  IXFR12N100F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Arrays
Manufacturer IXYS
Surface Mount NO
Number of Terminals 3Terminals
Transistor Element Material SILICON
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.29.00.95
Automotive No
PPAP No
Category Power MOSFET
Process Technology HiperFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 1000
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 10
Typical Gate Charge @ Vgs (nC) 77@10V
Typical Gate Charge @ 10V (nC) 77
Typical Input Capacitance @ Vds (pF) 2700@25V
Maximum Power Dissipation (mW) 250000
Typical Fall Time (ns) 12
Typical Rise Time (ns) 9.8
Typical Turn-Off Delay Time (ns) 31
Typical Turn-On Delay Time (ns) 12
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 21.34(Max)
Package Width 5.21(Max)
Package Length 16.13(Max)
PCB changed 3
Tab Tab
Standard Package Name SOP
Supplier Package ISOPLUS 247
Package Description ISOPLUS247, 3 PIN
Product Attribute Attribute Value
Package Style IN-LINE
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number IXFR12N100F
Package Shape RECTANGULAR
Manufacturer IXYS Corporation
Number of Elements 1 Element
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Risk Rank 5.71
Drain Current-Max (ID) 10 A
JESD-609 Code e1
Pbfree Code Yes
Part Status Unconfirmed
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 1.05 Ω
Pulsed Drain Current-Max (IDM) 48 A
DS Breakdown Voltage-Min 1000 V
Channel Type N
Avalanche Energy Rating (Eas) 1000 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
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Part # Manufacturer Package Availability
IXFR12N100F IXYS Integrated Circuits Division / Littelfuse -

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IXFR12N100F Comments

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2024-03-06 00:00:00

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2023-11-21 00:00:00

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