APT34N80B2C3G Tech Specifications

Microchip  APT34N80B2C3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer Microchip
Package / Case T-MAX-3
Mounting Type Through Hole
Surface Mount NO
Supplier Device Package T-MAX™ [B2]
Number of Terminals 3Terminals
Transistor Element Material SILICON
RoHS Details
Mounting Styles Through Hole
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 800 V
Id - Continuous Drain Current 34 A
Rds On - Drain-Source Resistance 145 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.1 V
Qg - Gate Charge 180 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 417 W
Channel Mode Enhancement
Factory Pack QuantityFactory Pack Quantity 1
Typical Turn-Off Delay Time 70 ns
Typical Turn-On Delay Time 25 ns
Unit Weight 0.208116 oz
Continuous Drain Current Id 34
Package Tube
Base Product Number APT34N80
Current - Continuous Drain (Id) @ 25℃ 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Microchip Technology
Power Dissipation (Max) 417W (Tc)
Product Status Active
Package Description IN-LINE, R-PSIP-T3
Package Style IN-LINE
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number APT34N80B2C3G
Package Shape RECTANGULAR
Number of Elements 1 Element
Product Attribute Attribute Value
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 1.42
Drain Current-Max (ID) 34 A
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series -
JESD-609 Code e1
Pbfree Code Yes
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Configuration Single
Number of Channels 1 ChannelChannel
Operating Mode ENHANCEMENT MODE
Power Dissipation 417
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 145mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 3.9V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 355 nC @ 10 V
Rise Time 15 ns
Drain to Source Voltage (Vdss) 800 V
Vgs (Max) ±20V
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 0.145 Ω
Pulsed Drain Current-Max (IDM) 102 A
DS Breakdown Voltage-Min 800 V
Channel Type N
Avalanche Energy Rating (Eas) 670 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature -
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APT34N80B2C3G Comments

109 reviews

Jacob. B
2023-07-13 00:00:00

useful to me, thanks.

Akiyoshi Yamada
2023-06-11 00:00:00

非常に満足しており、今後もリピート購入します。

Bo
2023-05-13 00:00:00

還不錯

EthanStone
2023-01-27 00:00:00

Shipping to the United States took less than a week, which is outstanding in my experience! (Your mileage may vary.)

Lucy
2022-12-21 00:00:00

I bought some components on their website to build my project, and each component performed well.

Harris
2022-11-25 00:00:00

The product is good. I couldn't tested it since I made some mistake in the assembly. But the discution and the explanation with th seller was realy great. I will retry the assembly :)

Matsuo
2022-11-14 00:00:00

Decent.

Corrin
2022-10-27 00:00:00

I don't have particularly strong feelings about electronic components purchased from Jakelectronic. The quality and performance of the product are OK, there are no obvious problems, but it did not bring me a particularly big surprise.

Louis
2022-08-12 00:00:00

I am a satisfied customer of jakelectronics, and I will continue to support them for their excellent service and products.

G
2022-08-05 00:00:00

It can meet my needs

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