APT27GA90BD15 Tech Specifications

Microsemi  APT27GA90BD15 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - IGBTs - Single
Manufacturer Microsemi
Factory Lead Time 33 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 900V
Number of Elements 1 Element
Test Conditions 600V, 14A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 223W
Product Attribute Attribute Value
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 223W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 48A
JEDEC-95 Code TO-247AD
Turn On Time 18 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 14A
Turn Off Time-Nom (toff) 281 ns
IGBT Type PT
Gate Charge 62nC
Current - Collector Pulsed (Icm) 79A
Td (on/off) @ 25°C 9ns/98ns
Switching Energy 413μJ (on), 287μJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
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APT27GA90BD15 Documents

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Part # Manufacturer Package Availability
APT27GA90BD15 Microsemi Corporation TO-247-3

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APT27GA90BD15 Comments

109 reviews

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2020-11-11 00:00:00

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