NTE2392 Tech Specifications

NTE ELECT  NTE2392 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer NTE ELECT
Mount Through Hole
Package / Case TO-204AA, TO-3
Mounting Type Through Hole
Surface Mount NO
Number of Pins 2Pins
Supplier Device Package TO-3
Weight 72.574779 g
Number of Terminals 2Terminals
Transistor Element Material SILICON
RoHS Non-Compliant
Turn Off Delay Time 125 ns
Manufacturer Part Number NTE2392
Manufacturer NTE Electronics
Continuous Drain Current 40(A)
Drain-Source On-Volt 100(V)
Operating Temperature Classification Military
Package Type TO-3
Operating Temp Range -55C to 150C
Gate-Source Voltage (Max) ±20(V)
Channel Mode Enhancement
Number of Elements 1 Element
Rad Hardened No
Mounting Through Hole
Package Bag
Current - Continuous Drain (Id) @ 25℃ 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr NTE Electronics, Inc
Product Status Active
Power Dissipation (Max) 150W (Tc)
Package Description FLANGE MOUNT, O-MBFM-P2
Package Style FLANGE MOUNT
Package Body Material METAL
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Turn-on Time-Max (ton) 135 ns
Package Shape ROUND
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Turn-off Time-Max (toff) 225 ns
Risk Rank 1.6
Part Package Code TO-204AA
Drain Current-Max (ID) 40 A
Operating Temperature -55°C ~ 150°C (TJ)
Series -
ECCN Code EAR99
Type Power MOSFET
Product Attribute Attribute Value
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Subcategory FET General Purpose Power
Max Power Dissipation 150 W
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 2 +Tab
JESD-30 Code O-MBFM-P2
Qualification Status Not Qualified
Polarity N
Configuration SINGLE WITH BUILT-IN DIODE
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150 W
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Vgs (Max) ±20V
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 40 A
Threshold Voltage 4 V
JEDEC-95 Code TO-3
Gate to Source Voltage (Vgs) 20 V
Drain Current-Max (Abs) (ID) 32 A
Drain-source On Resistance-Max 0.055 Ω
Drain to Source Breakdown Voltage 100 V
Pulsed Drain Current-Max (IDM) 160 A
DS Breakdown Voltage-Min 100 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 125 W
FET Feature -
Drain to Source Resistance 55 mΩ
Nominal Vgs 4 V
Power Dissipation Ambient-Max 150 W
Width 22.1996 mm
Height 8.89 mm
Length 152.4 mm
REACH SVHC Unknown
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Part # Manufacturer Package Availability
NTE2392 NTE Electronics, Inc. TO-204AA, TO-3

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NTE2392 Comments

109 reviews

Bradley
2021-06-11 00:00:00

The product descriptions are detailed and accurate, helping me make informed decisions.

Kim
2021-06-10 00:00:00

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2021-06-09 00:00:00

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2021-06-04 00:00:00

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2021-04-24 00:00:00

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2021-03-23 00:00:00

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2021-03-13 00:00:00

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2021-03-13 00:00:00

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2021-03-12 00:00:00

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2021-03-03 00:00:00

Their attention to detail in packaging ensures that products arrive safely and intact.

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