BUK7507-30B,127 Tech Specifications

NXP  BUK7507-30B,127 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer NXP
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Supplier Device Package TO-220AB
Number of Terminals 3Terminals
Transistor Element Material SILICON
Package Tube
Current - Continuous Drain (Id) @ 25℃ 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr NXP USA Inc.
Power Dissipation (Max) 157W (Tc)
Product Status Active
Package Description PLASTIC, SC-46, 3 PIN
Package Style FLANGE MOUNT
Package Body Material PLASTIC/EPOXY
Manufacturer Package Code SOT78A
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 175 °C
Rohs Code Yes
Manufacturer Part Number BUK7507-30B,127
Package Shape RECTANGULAR
Manufacturer NXP Semiconductors
Number of Elements 1 Element
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Risk Rank 7.15
Part Package Code TO-220
Drain Current-Max (ID) 75 A
Operating Temperature -55°C ~ 175°C (TJ)
Series TrenchMOS™
JESD-609 Code e3
Product Attribute Attribute Value
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2427 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Vgs (Max) ±20V
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 75 A
Drain-source On Resistance-Max 0.007 Ω
Pulsed Drain Current-Max (IDM) 435 A
DS Breakdown Voltage-Min 30 V
Avalanche Energy Rating (Eas) 329 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 157 W
FET Feature -
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Part # Manufacturer Package Availability
BUK7526-100B,127 NXP USA Inc. TO-220-3
BUK7535-55A,127 NXP USA Inc. TO-220-3 8915
BUK7520-100A,127 NXP USA Inc. TO-220-3
BUK752R7-30B,127 NXP USA Inc. TO-220-3
BUK7507-30B,127 NXP USA Inc. TO-220-3 4635
BUK7513-75B,127 NXP USA Inc. - 4197
BUK7528-55A,127 NXP USA Inc. TO-220-3 5192
BUK7509-75A,127 NXP USA Inc. - 6591
BUK7510-100B,127 NXP USA Inc. TO-220-3 822
BUK7511-55B,127 NXP USA Inc. TO-220-3

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BUK7507-30B,127 Comments

109 reviews

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2021-06-11 00:00:00

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2021-06-10 00:00:00

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