ON Semiconductor FDB3652 Single MOSFETs Transistors 61A
FDB3652
1807-369-FDB3652
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RoHS Compliant
Continuous Drain Current (ID): 61A
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FDB3652 Tech Specifications
ON Semiconductor FDB3652 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 20 hours ago) | |
| Factory Lead Time | 36 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Number of Pins | 3Pins | |
| Weight | 1.31247g | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 9A Ta 61A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 150W Tc | |
| Turn Off Delay Time | 26 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | PowerTrench® | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 16MOhm | |
| Voltage - Rated DC | 100V | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 61A |
| Product Attribute | Attribute Value | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PSSO-G2 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 150W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 12 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 16m Ω @ 61A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2880pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V | |
| Rise Time | 85ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 45 ns | |
| Continuous Drain Current (ID) | 61A | |
| Threshold Voltage | 4V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 9A | |
| Drain to Source Breakdown Voltage | 100V | |
| Nominal Vgs | 4 V | |
| Height | 6.35mm | |
| Length | 6.35mm | |
| Width | 6.35mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
FDB3652 Documents
Download datasheets and manufacturer documentation for FDB3652
PCN Design/Specification
Description Chg 01/Apr/2016 Logo 17/Aug/2017Datasheets
FDB3652, FDP3652 FDB3652-ON-Semiconductor-datasheet-85464128.pdf FDB3652-ON-Semiconductor-datasheet-86686896.pdf FDB3652-ON-Semiconductor-datasheet-81454770.pdf FDB3652-Fairchild-Semiconductor-datasheet-67910334.pdf FDB3652-ON-Semiconductor-datasheet-21630882.pdf FDB3652-Fairchild-Semiconductor-datasheet-17703351.pdf FDB3652-Fairchild-datasheet-39932.pdf FDB3652-Fairchild-datasheet-8321960.pdf FDB3652-Fairchild-Semiconductor-datasheet-14042139.pdfPCN Packaging
TO263 31/Aug/2016 Mult Devices 24/Oct/2017PCN Assembly/Origin
Mult Dev Assembly/Material Chgs 15/Mar/2018Environmental Information
Material Declaration FDB3652RohsStatement
Fairchild-Semiconductor-FDB3652.pdf
Others include "FDB36" parts
The following parts include 'FDB36'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| FDB3652 | ON Semiconductor | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5640 |
| FDB3652-F085 | ON Semiconductor | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 50 |
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| Part # | Manufacturer | Description | Package | RoHS | |
|---|---|---|---|---|---|
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| HUF75645S3ST | ON Semiconductor | MOSFET N-CH 100V 75A D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
 | IRFS4610PBF | Infineon Technologies | MOSFET N-CH 100V 73A D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| IRF3710ZSTRLPBF | Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| IRFS4610TRLPBF | Infineon Technologies | MOSFET N-CH 100V 73A D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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FDB3652 Comments
109 reviews
2024-03-06 00:00:00
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2024-03-04 15:56:56
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2024-01-12 00:00:00
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2024-01-10 00:00:00
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2024-01-03 00:00:00
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2023-11-28 00:00:00
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2023-11-22 00:00:00
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2023-11-21 00:00:00
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