FDC637BNZ Tech Specifications

ON Semiconductor  FDC637BNZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case SOT-23-6 Thin, TSOT-23-6
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 6Pins
Weight 36mg
Transistor Element Material SILICON
Turn Off Delay Time 22 ns
Power Dissipation (Max) 1.6W Ta
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 2.5V 4.5V
Current - Continuous Drain (Id) @ 25℃ 6.2A Ta
Series PowerTrench®
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 24MOhm
Terminal Finish Tin (Sn)
Product Attribute Attribute Value
Terminal Position DUAL
Terminal Form GULL WING
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 800mW
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 6.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 895pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time 6ns
Vgs (Max) ±12V
Fall Time (Typ) 6 ns
Continuous Drain Current (ID) 6.2A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 800 mV
Height 1.1mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free
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FDC637BNZ Documents

Download datasheets and manufacturer documentation for   FDC637BNZ

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FDC637BNZ Comments

109 reviews

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2021-06-11 00:00:00

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2021-06-10 00:00:00

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2021-03-03 00:00:00

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