ON Semiconductor FDS4935BZ MOSFETs Transistors Arrays 900mW 30V
FDS4935BZ
1807-367-FDS4935BZ
8-SOIC (0.154, 3.90mm Width)
RoHS Compliant
Power - Max: 900mW,Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V,Drain to Source Voltage (Vdss): 30V
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FDS4935BZ Tech Specifications
ON Semiconductor FDS4935BZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | ON Semiconductor | |
| Factory Lead Time | 10 Weeks | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Mounting Type | Surface Mount | |
| Mount | Surface Mount | |
| Number of Pins | 8Pins | |
| Weight | 187mg | |
| Transistor Element Material | SILICON | |
| Turn Off Delay Time | 68 ns | |
| Number of Elements | 2 Elements | |
| Current - Continuous Drain (Id) @ 25℃ | 6.9A | |
| Published | 2006 | |
| Series | PowerTrench® | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C~150°C TJ | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Resistance | 22MOhm | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | ESD PROTECTION | |
| Voltage - Rated DC | -30V | |
| Max Power Dissipation | 1.6W | |
| Terminal Form | GULL WING | |
| Current Rating | -6.9A |
| Product Attribute | Attribute Value | |
|---|---|---|
| Number of Channels | 2Channels | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.6W | |
| Turn On Delay Time | 12 ns | |
| Power - Max | 900mW | |
| FET Type | 2 P-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 22m Ω @ 6.9A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1360pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V | |
| Rise Time | 13ns | |
| Drain to Source Voltage (Vdss) | 30V | |
| Fall Time (Typ) | 13 ns | |
| Continuous Drain Current (ID) | -6.9A | |
| Threshold Voltage | -1.9V | |
| Gate to Source Voltage (Vgs) | 25V | |
| Drain to Source Breakdown Voltage | -30V | |
| Dual Supply Voltage | -30V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Max Junction Temperature (Tj) | 150°C | |
| FET Feature | Logic Level Gate | |
| Nominal Vgs | 1.9 V | |
| Width | 4mm | |
| Length | 5mm | |
| Height | 1.75mm | |
| RoHS Status | ROHS3 Compliant | |
| Radiation Hardening | No | |
| REACH SVHC | No SVHC | |
| Lead Free | Lead Free |
FDS4935BZ Documents
Download datasheets and manufacturer documentation for FDS4935BZ
PCN Packaging
Mult MSL1 Pkg Chg 20/Dec/2018 Mult Devices 24/Oct/2017Datasheets
FDS4935BZ-ON-Semiconductor-datasheet-86693980.pdf FDS4935BZ-ON-Semiconductor-datasheet-86689248.pdf FDS4935BZ-ON-Semiconductor-datasheet-130081593.pdf FDS4935BZ-ON-Semiconductor-datasheet-80928663.pdf FDS4935BZ-Fairchild-Semiconductor-datasheet-67650128.pdf FDS4935BZ FDS4935BZ-ON-Semiconductor-datasheet-97399173.pdf FDS4935BZ-Fairchild-Semiconductor-datasheet-14041842.pdf FDS4935BZ-ON-Semiconductor-datasheet-164271.pdfPCN Assembly/Origin
Mult Dev Sourcing Rev 10/Dec/2018Environmental Information
Material Declaration FDS4935BZReachStatement
Fairchild-Semiconductor-FDS4935BZ.pdfPCN Design/Specification
FDS4935BZ Die Revision 05/Dec/2007 Logo 17/Aug/2017
Others include "FDS49" parts
The following parts include 'FDS49'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| FDS4935BZ | ON Semiconductor | 8-SOIC (0.154, 3.90mm Width) | 50000 |
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FDS4935BZ Comments
109 reviews
2024-03-06 00:00:00
I've recommended jakelectronics to my colleagues
2024-03-04 15:56:56
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2024-02-21 00:00:00
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2024-01-24 00:00:00
Overall, it was good
2024-01-12 00:00:00
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2024-01-10 00:00:00
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2024-01-03 00:00:00
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2023-11-28 00:00:00
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2023-11-22 00:00:00
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2023-11-21 00:00:00
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