ON Semiconductor FQD9N25TM-F085 Single MOSFETs Transistors 7.4A 29.6A
FQD9N25TM-F085
1807-369-FQD9N25TM-F085
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Compliant
Continuous Drain Current (ID): 7.4A,Pulsed Drain Current-Max (IDM): 29.6A
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FQD9N25TM-F085 Tech Specifications
ON Semiconductor FQD9N25TM-F085 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | ON Semiconductor | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 7.4A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2.5W Ta 55W Tc | |
| Turn Off Delay Time | 25 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101, QFET® | |
| JESD-609 Code | e3 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PSSO-G2 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 55W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 13 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 420m Ω @ 3.7A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | |
| Rise Time | 105ns | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 45 ns | |
| Continuous Drain Current (ID) | 7.4A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain to Source Breakdown Voltage | 250V | |
| Pulsed Drain Current-Max (IDM) | 29.6A | |
| Avalanche Energy Rating (Eas) | 165 mJ | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
FQD9N25TM-F085 Documents
Download datasheets and manufacturer documentation for FQD9N25TM-F085
PCN Part Number
Mult Device Part Number Chg 30/May/2017Environmental Information
Material Declaration FQD9N25TM-F085PCN Design/Specification
Logo 17/Aug/2017PCN Packaging
Mult Devices 24/Oct/2017Datasheets
Others include "FQD9N" parts
The following parts include 'FQD9N'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| FQD9N25TM | ON Semiconductor | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6793 |
| FQD9N25TM-F080 | ON Semiconductor | TO-252-3, DPak (2 Leads + Tab), SC-63 | 23 |
| FQD9N25TM-F085 | ON Semiconductor | TO-252-3, DPak (2 Leads + Tab), SC-63 | 23 |
| FQD9N25TM_SBEK002 | ON Semiconductor | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alternate Products
| Part # | Manufacturer | Description | Package | RoHS | |
|---|---|---|---|---|---|
 | FQD9N25TM-F085 | ON Semiconductor | MOSFET 250V N-Channel QFET | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IRFR9N20DTRPBF | Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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FQD9N25TM-F085 Comments
109 reviews
2020-11-11 00:00:00
I would purchase again.
2020-10-20 00:00:00
The process of buying electronic components on Jakelectronic is relatively smooth, but sometimes more product information and specifications are required.
2020-10-09 00:00:00
easy to find and purchase products
2020-09-28 00:00:00
Product is exactly as described. Still running the hardware through it's paces, but everything so far has been great.
2020-09-18 00:00:00
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2020-09-12 00:00:00
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2020-08-15 00:00:00
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2020-07-03 00:00:00
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2020-06-26 00:00:00
Highly recommend !!!
2020-06-17 00:00:00
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