ON Semiconductor HGT1S10N120BNST Single IGBTs 1200V 35A 1.2kV
HGT1S10N120BNST
1807-372-HGT1S10N120BNST
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RoHS Compliant
Max Collector Current: 35A,Voltage - Collector Emitter Breakdown (Max): 1200V,Collector Emitter Voltage (VCEO): 1.2kV,Max Power Dissipation: 298W
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HGT1S10N120BNST Tech Specifications
ON Semiconductor HGT1S10N120BNST technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - IGBTs - Single | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 4 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Number of Pins | 3Pins | |
| Weight | 1.31247g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Collector-Emitter Saturation Voltage | 2.7V | |
| Number of Elements | 1 Element | |
| Test Conditions | 960V, 10A, 10 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2017 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | LOW CONDUCTION LOSS | |
| HTS Code | 8541.29.00.95 | |
| Voltage - Rated DC | 1.2kV | |
| Max Power Dissipation | 298W | |
| Terminal Form | GULL WING | |
| Current Rating | 35A | |
| Base Part Number | HGT1S10N120 |
| Product Attribute | Attribute Value | |
|---|---|---|
| JESD-30 Code | R-PSSO-G2 | |
| Rise Time-Max | 15ns | |
| Element Configuration | Single | |
| Power Dissipation | 298W | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Transistor Application | MOTOR CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 35A | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Max Breakdown Voltage | 1.2kV | |
| Turn On Time | 32 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A | |
| Continuous Collector Current | 55A | |
| Turn Off Time-Nom (toff) | 330 ns | |
| IGBT Type | NPT | |
| Gate Charge | 100nC | |
| Current - Collector Pulsed (Icm) | 80A | |
| Td (on/off) @ 25°C | 23ns/165ns | |
| Switching Energy | 320μJ (on), 800μJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Fall Time-Max (tf) | 200ns | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Width | 9.65mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
HGT1S10N120BNST Documents
Download datasheets and manufacturer documentation for HGT1S10N120BNST
PCN Design/Specification
Description Chg 01/Apr/2016 Logo 17/Aug/2017Datasheets
HGT(G,P)10N120BN, HGT1S10N120BNS HGT1S10N120BNST-ON-Semiconductor-datasheet-85559931.pdf HGT1S10N120BNST-ON-Semiconductor-datasheet-86708982.pdf HGT1S10N120BNST-ON-Semiconductor-datasheet-81454970.pdf HGT1S10N120BNST-Fairchild-datasheet-45944.pdf HGT1S10N120BNST-Fairchild-Semiconductor-datasheet-11606427.pdf HGT1S10N120BNST-ON-Semiconductor-datasheet-13703701.pdfPCN Packaging
TO263 31/Aug/2016 Tape and Box/Reel Barcode Update 07/Aug/2014PCN Assembly/Origin
Mult Dev Assembly/Material Chgs 15/Mar/2018Environmental Information
Material Declaration HGT1S10N120BNSTReachStatement
Fairchild-Semiconductor-HGT1S10N120BNST.pdfTechnicalDrawing
Fairchild-Semiconductor-HGT1S10N120BNST.pdf
Others include "HGT1S" parts
The following parts include 'HGT1S'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| HGT1S10N120BNST | ON Semiconductor | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3250 |
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| Part # | Manufacturer | Description | Package | RoHS | |
|---|---|---|---|---|---|
 | HGT1S10N120BNST | ON Semiconductor | IGBT 1200V 35A 298W TO263AB | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
 | STGB3NC120HDT4 | STMicroelectronics | IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
 | STGB6NC60HDT4 | STMicroelectronics | IGBT 600V 15A 56W D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| FGB20N60SF | ON Semiconductor | FAIRCHILD SEMICONDUCTOR FGB20N60SF IGBT Single Transistor, General Purpose, 20 A, 600 V, 208 W, 600 V, TO-263, 3 Pins | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
 | IRG4BH20K-SPBF | Infineon Technologies | IGBT 1200V 11A 60W D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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HGT1S10N120BNST Comments
109 reviews
2023-07-13 00:00:00
useful to me, thanks.
2023-06-11 00:00:00
非常に満足しており、今後もリピート購入します。
2023-05-13 00:00:00
還不錯
2023-01-27 00:00:00
Shipping to the United States took less than a week, which is outstanding in my experience! (Your mileage may vary.)
2022-12-21 00:00:00
I bought some components on their website to build my project, and each component performed well.
2022-11-25 00:00:00
The product is good. I couldn't tested it since I made some mistake in the assembly. But the discution and the explanation with th seller was realy great. I will retry the assembly :)
2022-11-14 00:00:00
Decent.
2022-10-27 00:00:00
I don't have particularly strong feelings about electronic components purchased from Jakelectronic. The quality and performance of the product are OK, there are no obvious problems, but it did not bring me a particularly big surprise.
2022-08-12 00:00:00
I am a satisfied customer of jakelectronics, and I will continue to support them for their excellent service and products.
2022-08-05 00:00:00
It can meet my needs