MCH3377-TL-E Tech Specifications

ON Semiconductor  MCH3377-TL-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3Pins
Supplier Device Package 3-MCPH
Number of Terminals 3Terminals
Transistor Element Material SILICON
RoHS Compliant
Turn Off Delay Time 42 ns
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 3A (Ta)
Mfr onsemi
Product Status Active
Package Description LEAD FREE, MCPH3, SC-70, 3 PIN
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Manufacturer Package Code 419AQ
Operating Temperature-Max 150 °C
Manufacturer Part Number MCH3377-TL-E
Package Shape RECTANGULAR
Manufacturer ON Semiconductor
Number of Elements 1 Element
Part Life Cycle Code Lifetime Buy
Ihs Manufacturer ON SEMICONDUCTOR
Risk Rank 5.12
Drain Current-Max (ID) 3 A
Packaging Cut Tape (CT)
Series -
JESD-609 Code e6
Pbfree Code Yes
ECCN Code EAR99
Resistance 83 mΩ
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Subcategory Other Transistors
Product Attribute Attribute Value
Max Power Dissipation 1 W
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PDSO-F3
Configuration SINGLE WITH BUILT-IN DIODE
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1 W
Turn On Delay Time 8.1 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 83mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id -
Input Capacitance (Ciss) (Max) @ Vds 375 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 4.6 nC @ 4.5 V
Rise Time 26 ns
Drain to Source Voltage (Vdss) -20 V
Polarity/Channel Type P-CHANNEL
Continuous Drain Current (ID) 3 A
Gate to Source Voltage (Vgs) 10 V
Drain Current-Max (Abs) (ID) 3 A
Drain-source On Resistance-Max 0.083 Ω
Drain to Source Breakdown Voltage 20 V
Input Capacitance 375 pF
DS Breakdown Voltage-Min 20 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 1 W
FET Feature -
Drain to Source Resistance 83 mΩ
Rds On Max 83 mΩ
Width 1.6 mm
Height 850 µm
Length 2 mm
Radiation Hardening No
Lead Free Lead Free
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MCH3377-TL-E Documents

Download datasheets and manufacturer documentation for   MCH3377-TL-E

  • Datasheets

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MCH3377-TL-E Comments

109 reviews

Friedman
2023-11-06 00:00:00

Great experience with JAK.

Sam Smith
2023-10-28 00:00:00

The quality and price of electronic components purchased on Jakelectronic are OK, but their website interface is a bit old

McMahon
2023-10-24 00:00:00

reasonable price.

Daron R.
2023-09-11 00:00:00

Love these!

Wayne
2023-08-31 00:00:00

The board looks and works exactly as it should

Christopher G.
2023-08-26 00:00:00

Good shopping experience, hope jak can improve inventory management

노훈
2023-08-20 00:00:00

전자 부품의 품질과 가격은 괜찮습니다.

Ian
2023-08-10 00:00:00

The best platform for all the parts throughout the world.

David
2023-07-26 00:00:00

The product performance meets expectations, and the delivery time is not too long.

Rostow
2023-07-18 00:00:00

Product quality is OK, but customer service can be better.

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