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- MMUN2114LT1G
ON Semiconductor MMUN2114LT1G Pre-Biased BJT Transistors
MMUN2114LT1G
1807-366-MMUN2114LT1G
TO-236-3, SC-59, SOT-23-3
RoHS Compliant
Current - Collector Cutoff (Max): 500nA
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MMUN2114LT1G Tech Specifications
ON Semiconductor MMUN2114LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | -50V | |
| Number of Elements | 1 Element | |
| hFEMin | 80 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2001 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO 0.21 | |
| HTS Code | 8541.21.00.95 | |
| Voltage - Rated DC | -50V | |
| Max Power Dissipation | 246mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Current Rating | -100mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MMUN21**L | |
| Pin Count | 3 | |
| Max Output Current | 100mA | |
| Operating Supply Voltage | 50V | |
| Polarity | PNP | |
| Element Configuration | Single | |
| Power Dissipation | 246mW | |
| Transistor Application | SWITCHING | |
| Halogen Free | Halogen Free | |
| Transistor Type | PNP - Pre-Biased | |
| Collector Emitter Voltage (VCEO) | 50V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA | |
| Max Breakdown Voltage | 50V | |
| Resistor - Base (R1) | 10 k Ω | |
| Continuous Collector Current | 100mA | |
| Resistor - Emitter Base (R2) | 47 k Ω | |
| Height | 1.01mm | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
MMUN2114LT1G Documents
Download datasheets and manufacturer documentation for MMUN2114LT1G
Datasheets
MUN(2,5)114, MMUN2114L, DTA114Yxx, NSBA114YF3 MMUN2114LT1G-ON-Semiconductor-datasheet-13172866.pdf MMUN2114LT1G-ON-Semiconductor-datasheet-78758884.pdf MMUN2114LT1G-ON-Semiconductor-datasheet-58910.pdf MMUN2114LT1G-ON-Semiconductor-datasheet-37114245.pdfEnvironmental Information
Material Declaration MMUN2114LT1GPCN Design/Specification
Copper Wire Update 10/Sep/2015 SOT23 16/Sep/2016PCN Assembly/Origin
Mold Compound 08/Sep/2019RohsStatement
ON-Semiconductor-MMUN2114LT1G.pdf
Others include "MMUN2" parts
The following parts include 'MMUN2'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| MMUN2211LT1G | ON Semiconductor | TO-236-3, SC-59, SOT-23-3 | 120000 |
| MMUN2112LT1G | ON Semiconductor | TO-236-3, SC-59, SOT-23-3 | 90000 |
| MMUN2232LT1G | ON Semiconductor | TO-236-3, SC-59, SOT-23-3 | 192 |
| MMUN2111LT1G | ON Semiconductor | TO-236-3, SC-59, SOT-23-3 | 12000 |
| MMUN2213LT1G | ON Semiconductor | TO-236-3, SC-59, SOT-23-3 | 21000 |
| MMUN2113LT1G | ON Semiconductor | TO-236-3, SC-59, SOT-23-3 | 69880 |
| MMUN2233LT1G | ON Semiconductor | TO-236-3, SC-59, SOT-23-3 | 810 |
| MMUN2133LT1G | ON Semiconductor | TO-236-3, SC-59, SOT-23-3 | 42000 |
| MMUN2116LT1G | ON Semiconductor | TO-236-3, SC-59, SOT-23-3 | 51000 |
| MMUN2216LT1G | ON Semiconductor | TO-236-3, SC-59, SOT-23-3 | 4690 |
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| Part # | Manufacturer | Description | Package | RoHS | |
|---|---|---|---|---|---|
 | MMUN2114LT1G | ON Semiconductor | TRANS PREBIAS PNP 246MW SOT23-3 | TO-236-3, SC-59, SOT-23-3 | |
| MMUN2113LT1G | ON Semiconductor | TRANS PREBIAS PNP 0.4W SOT23-3 | TO-236-3, SC-59, SOT-23-3 | |
| MMUN2133LT1G | ON Semiconductor | TRANS PREBIAS PNP 246MW SOT23-3 | TO-236-3, SC-59, SOT-23-3 | |
| MMUN2134LT1G | ON Semiconductor | ON SEMICONDUCTOR MMUN2134LT1G. TRANSISTOR, PRE-BIASED, PNP, 50V, 22/47KOHM, SOT-23 | TO-236-3, SC-59, SOT-23-3 | |
 | DDTA114YCA-7-F | Diodes Incorporated | TRANS PREBIAS PNP 200MW SOT23-3 | SOT-23-3 |
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MMUN2114LT1G Comments
109 reviews
2024-03-06 00:00:00
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