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- MUN5135T1G
ON Semiconductor MUN5135T1G Pre-Biased BJT Transistors
MUN5135T1G
1807-366-MUN5135T1G
SC-70, SOT-323
RoHS Compliant
Current - Collector Cutoff (Max): 500nA
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MUN5135T1G Tech Specifications
ON Semiconductor MUN5135T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 1 Element | |
| hFEMin | 80 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2008 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | -50V | |
| Max Power Dissipation | 202mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Product Attribute | Attribute Value | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -100mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MUN51**T | |
| Pin Count | 3 | |
| Max Output Current | 100mA | |
| Operating Supply Voltage | 50V | |
| Polarity | PNP | |
| Element Configuration | Single | |
| Power Dissipation | 202mW | |
| Transistor Application | SWITCHING | |
| Halogen Free | Halogen Free | |
| Transistor Type | PNP - Pre-Biased | |
| Collector Emitter Voltage (VCEO) | 50V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA | |
| Max Breakdown Voltage | 50V | |
| Resistor - Base (R1) | 2.2 k Ω | |
| Continuous Collector Current | 100mA | |
| Resistor - Emitter Base (R2) | 47 k Ω | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
MUN5135T1G Documents
Download datasheets and manufacturer documentation for MUN5135T1G
PCN Design/Specification
Copper Wire 29/Oct/2009Datasheets
MUN5135T1G-ON-Semiconductor-datasheet-11552514.pdf MUN5135T1G-ON-Semiconductor-datasheet-8517134.pdf MUN5135, DTA123Jxx, NSBA123JF3 MUN5135T1G-ON-Semiconductor-datasheet-15540343.pdf MUN5135T1G-ON-Semiconductor-datasheet-94100599.pdf MUN5135T1G-ON-Semiconductor-datasheet-519969.pdfPCN Assembly/Origin
Mult Dev Wafer Fab Site Add 2/Nov/2017 Mult Dev 05/Dec/2019Environmental Information
Material Declaration MUN5135T1GRohsStatement
ON-Semiconductor-MUN5135T1G.pdf
Others include "MUN51" parts
The following parts include 'MUN51'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| MUN5135T1G | ON Semiconductor | SC-70, SOT-323 | 72000 |
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MUN5135T1G Comments
109 reviews
2024-03-06 00:00:00
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2024-03-04 15:56:56
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2024-01-03 00:00:00
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2023-11-28 00:00:00
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2023-11-22 00:00:00
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2023-11-21 00:00:00
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