ON Semiconductor NSS30100LT1G Single BJT Transistors
NSS30100LT1G
1807-365-NSS30100LT1G
TO-236-3, SC-59, SOT-23-3
RoHS Compliant
Transition Frequency: 100MHz
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NSS30100LT1G Tech Specifications
ON Semiconductor NSS30100LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | ON Semiconductor | |
| Factory Lead Time | 5 Weeks | |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) | |
| Contact Plating | Tin | |
| Surface Mount | YES | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Mounting Type | Surface Mount | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 30V | |
| Collector-Emitter Saturation Voltage | -650mV | |
| Number of Elements | 1 Element | |
| hFEMin | 100 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C~150°C TJ | |
| Published | 2004 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | -30V | |
| Max Power Dissipation | 310mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Product Attribute | Attribute Value | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -1A | |
| Frequency | 100MHz | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | NSS30100 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Power Dissipation | 710mW | |
| Power - Max | 310mW | |
| Transistor Application | SWITCHING | |
| Halogen Free | Halogen Free | |
| Gain Bandwidth Product | 100MHz | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 30V | |
| Max Collector Current | 1A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 2V | |
| Current - Collector Cutoff (Max) | 100nA | |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 200mA, 2A | |
| Transition Frequency | 100MHz | |
| Max Breakdown Voltage | 30V | |
| Collector Base Voltage (VCBO) | 50V | |
| Emitter Base Voltage (VEBO) | 5V | |
| RoHS Status | ROHS3 Compliant | |
| Radiation Hardening | No | |
| Lead Free | Lead Free |
NSS30100LT1G Documents
Download datasheets and manufacturer documentation for NSS30100LT1G
Datasheets
NSS30100LT1G NSS30100LT1G-ON-Semiconductor-datasheet-14064456.pdf NSS30100LT1G-ON-Semiconductor-datasheet-13700822.pdf NSS30100LT1G-ON-Semiconductor-datasheet-102492068.pdfPCN Design/Specification
SOT23 16/Sep/2016 Material CHG 16/Dec/2015Environmental Information
Material Declaration NSS30100LT1GPCN Assembly/Origin
NSS3010y Wafer Chg 10/Dec/2019RohsStatement
ON-Semiconductor-NSS30100LT1G.pdf
Others include "NSS30" parts
The following parts include 'NSS30'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| NSS30100LT1G | ON Semiconductor | TO-236-3, SC-59, SOT-23-3 | 36000 |
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Alternate Products
| Part # | Manufacturer | Description | Package | RoHS | |
|---|---|---|---|---|---|
 | NSS30100LT1G | ON Semiconductor | TRANS PNP 30V 1A SOT-23 | TO-236-3, SC-59, SOT-23-3 | |
 | MMBTA64LT1G | ON Semiconductor | TRANS PNP DARL 30V 0.5A SOT23 | TO-236-3, SC-59, SOT-23-3 | |
| BC858ALT1G | ON Semiconductor | Trans GP BJT PNP 30V 0.1A 3-Pin SOT-23 T/R | TO-236-3, SC-59, SOT-23-3 | |
| MMBTA63LT1G | ON Semiconductor | TRANS PNP DARL 30V 0.5A SOT23 | TO-236-3, SC-59, SOT-23-3 |
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NSS30100LT1G Comments
109 reviews
2020-11-11 00:00:00
I would purchase again.
2020-10-20 00:00:00
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2020-10-09 00:00:00
easy to find and purchase products
2020-09-28 00:00:00
Product is exactly as described. Still running the hardware through it's paces, but everything so far has been great.
2020-09-18 00:00:00
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2020-09-12 00:00:00
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2020-08-15 00:00:00
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2020-07-03 00:00:00
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2020-06-26 00:00:00
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2020-06-17 00:00:00
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