ON Semiconductor NTD5802NT4G Single MOSFETs Transistors 16.4A
NTD5802NT4G
1807-369-NTD5802NT4G
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Compliant
Continuous Drain Current (ID): 16.4A
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NTD5802NT4G Tech Specifications
ON Semiconductor NTD5802NT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 14 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 16.4A Ta 101A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2.5W Ta 93.75W Tc | |
| Turn Off Delay Time | 39 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2007 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Pin Count | 3 |
| Product Attribute | Attribute Value | |
|---|---|---|
| JESD-30 Code | R-PSSO-G2 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 93.75W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 14 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 4.4m Ω @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 5025pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V | |
| Rise Time | 52ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 8.5 ns | |
| Continuous Drain Current (ID) | 16.4A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain-source On Resistance-Max | 0.0078Ohm | |
| Drain to Source Breakdown Voltage | 40V | |
| Avalanche Energy Rating (Eas) | 240 mJ | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
NTD5802NT4G Documents
Download datasheets and manufacturer documentation for NTD5802NT4G
ReachStatement
ON-Semiconductor-company-79.pdfDatasheets
NTD,NVD5802N NTD,NVD5802N NTD5802NT4G-ON-Semiconductor-datasheet-139012970.pdf NTD5802NT4G-ON-Semiconductor-datasheet-41569413.pdf NTD5802NT4G-ON-Semiconductor-datasheet-9895709.pdf NTD5802NT4G-ON-Semiconductor-datasheet-93402392.pdf NTD5802NT4G-ON-Semiconductor-datasheet-11798312.pdf NTD5802NT4G-ON-Semiconductor-datasheet-14062127.pdfPCN Assembly/Origin
Mult Dev Assembly Site Add 8/Mar/2018Environmental Information
Material Declaration NTD5802NT4G
Others include "NTD58" parts
The following parts include 'NTD58'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| NTD5802NT4G | ON Semiconductor | TO-252-3, DPak (2 Leads + Tab), SC-63 | 78000 |
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| Part # | Manufacturer | Description | Package | RoHS | |
|---|---|---|---|---|---|
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| NVD5890NT4G | ON Semiconductor | MOSFET N-CH 40V 100A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| NVD5890NLT4G | ON Semiconductor | MOSFET 40V T2 DPAK USR GRESHAM F | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
 | NTD4804N-1G | ON Semiconductor | MOSFET N-CH 30V 14.5A IPAK | TO-251-3 Short Leads, IPak, TO-251AA |
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NTD5802NT4G Comments
109 reviews
2024-03-06 00:00:00
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2024-03-04 15:56:56
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2024-02-21 00:00:00
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2024-01-24 00:00:00
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2024-01-12 00:00:00
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2024-01-10 00:00:00
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2024-01-03 00:00:00
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2023-11-28 00:00:00
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2023-11-22 00:00:00
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2023-11-21 00:00:00
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