NTH4L028N170M1 Tech Specifications

ON Semiconductor  NTH4L028N170M1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Package / Case TO-247-4L
Mounting Type Through Hole
Supplier Device Package TO-247-4L
RoHS Details
Mounting Styles Through Hole
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 1.7 kV
Id - Continuous Drain Current 81 A
Rds On - Drain-Source Resistance 40 mOhms
Vgs - Gate-Source Voltage - 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 4.3 V
Qg - Gate Charge 200 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 535 W
Channel Mode Enhancement
Fall Time 13 ns
Forward Transconductance - Min 31 S
Factory Pack QuantityFactory Pack Quantity 30
Typical Turn-Off Delay Time 121 ns
Product Attribute Attribute Value
Typical Turn-On Delay Time 47 ns
Package Tube
Base Product Number NTH4L02
Current - Continuous Drain (Id) @ 25℃ 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Mfr onsemi
Power Dissipation (Max) 535W (Tc)
Product Status Active
Packaging Tube
Series NTH4L028N170M1
Operating Temperature -55°C ~ 175°C (TJ)
Configuration Single
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40mOhm @ 60A, 20V
Vgs(th) (Max) @ Id 4.3V @ 20mA
Input Capacitance (Ciss) (Max) @ Vds 4230 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 20 V
Rise Time 18 ns
Drain to Source Voltage (Vdss) 1700 V
Vgs (Max) +25V, -15V
FET Feature -
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NTH4L028N170M1 Documents

Download datasheets and manufacturer documentation for   NTH4L028N170M1

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Part # Manufacturer Package Availability
NTH4L028N170M1 ON Semiconductor TO-247-4L 927

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