ON Semiconductor NTMSD3P102R2SG Single MOSFETs Transistors 2.34A
NTMSD3P102R2SG
1807-369-NTMSD3P102R2SG
8-SOIC (0.154, 3.90mm Width)
RoHS Compliant
Continuous Drain Current (ID): 2.34A
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NTMSD3P102R2SG Tech Specifications
ON Semiconductor NTMSD3P102R2SG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | ON Semiconductor | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Current - Continuous Drain (Id) @ 25℃ | 2.34A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 730mW Ta | |
| Turn Off Delay Time | 32 ns | |
| Packaging | Tape & Reel (TR) | |
| Series | FETKY™ | |
| Published | 2007 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | -20V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Product Attribute | Attribute Value | |
|---|---|---|
| Current Rating | -3.05A | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-G8 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 85m Ω @ 3.05A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 16V | |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V | |
| Rise Time | 42ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 35 ns | |
| Continuous Drain Current (ID) | 2.34A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain-source On Resistance-Max | 0.085Ohm | |
| Drain to Source Breakdown Voltage | -20V | |
| FET Feature | Schottky Diode (Isolated) | |
| Feedback Cap-Max (Crss) | 135 pF | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
NTMSD3P102R2SG Documents
Download datasheets and manufacturer documentation for NTMSD3P102R2SG
Datasheets
NTMSD3P102R2ReachStatement
ON-Semiconductor-company-79.pdfPCN Design/Specification
Copper Wire 12/May/2009PCN Obsolescence/ EOL
Multiple Devices 17/Apr/2015
Others include "NTMSD" parts
The following parts include 'NTMSD'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| NTMSD3P102R2SG | ON Semiconductor | 8-SOIC (0.154, 3.90mm Width) | 5717 |
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|---|---|---|---|---|---|
 | NTMSD3P102R2SG | ON Semiconductor | MOSFET P-CH 20V 2.34A 8-SOIC | 8-SOIC (0.154, 3.90mm Width) | |
 | NDS9947 | ON Semiconductor | MOSFET 2P-CH 20V 3.5A 8-SOIC | 8-SOIC (0.154, 3.90mm Width) | |
| MMDF3N02HDR2G | ON Semiconductor | MOSFET P-CH 20V 3.8A 8-SOIC | 8-SOIC (0.154, 3.90mm Width) | |
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NTMSD3P102R2SG Comments
109 reviews
2020-11-11 00:00:00
I would purchase again.
2020-10-20 00:00:00
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2020-10-09 00:00:00
easy to find and purchase products
2020-09-28 00:00:00
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2020-09-18 00:00:00
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2020-09-12 00:00:00
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2020-07-03 00:00:00
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