ON Semiconductor NTMSD6N303R2G Single MOSFETs Transistors 6A 30A
NTMSD6N303R2G
1807-369-NTMSD6N303R2G
8-SOIC (0.154, 3.90mm Width)
RoHS Compliant
Continuous Drain Current (ID): 6A,Pulsed Drain Current-Max (IDM): 30A
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NTMSD6N303R2G Tech Specifications
ON Semiconductor NTMSD6N303R2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | OBSOLETE (Last Updated: 1 day ago) | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2W Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Current - Continuous Drain (Id) @ 25℃ | 6A Ta | |
| Turn Off Delay Time | 45 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | FETKY™ | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Voltage - Rated DC | 30V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Product Attribute | Attribute Value | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 6A | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Pin Count | 8 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 32m Ω @ 6A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 24V | |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | |
| Rise Time | 22ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 45 ns | |
| Continuous Drain Current (ID) | 6A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 6A | |
| Drain-source On Resistance-Max | 0.032Ohm | |
| Drain to Source Breakdown Voltage | 30V | |
| Pulsed Drain Current-Max (IDM) | 30A | |
| Avalanche Energy Rating (Eas) | 325 mJ | |
| FET Feature | Schottky Diode (Isolated) | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
NTMSD6N303R2G Documents
Download datasheets and manufacturer documentation for NTMSD6N303R2G
PCN Obsolescence/ EOL
Multiple Devices 14/Apr/2010Datasheets
NTMSD6N303R2ReachStatement
ON-Semiconductor-company-79.pdf
Others include "NTMSD" parts
The following parts include 'NTMSD'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| NTMSD6N303R2G | ON Semiconductor | 8-SOIC (0.154, 3.90mm Width) | 78000 |
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| Part # | Manufacturer | Description | Package | RoHS | |
|---|---|---|---|---|---|
 | NTMSD6N303R2G | ON Semiconductor | MOSFET N-CH 30V 6A 8-SOIC | 8-SOIC (0.154, 3.90mm Width) | |
| NTMD6N03R2G | ON Semiconductor | MOSFET 2N-CH 30V 6A 8SOIC | 8-SOIC (0.154, 3.90mm Width) | |
 | FDS4935A | ON Semiconductor | ON SEMICONDUCTOR - FDS4935A - DUAL P CHANNEL MOSFET | 8-SOIC (0.154, 3.90mm Width) | |
| NTMD6N03R2 | ON Semiconductor | MOSFET 2N-CH 30V 6A 8SOIC | 8-SOIC (0.154, 3.90mm Width) |
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NTMSD6N303R2G Comments
109 reviews
2021-06-11 00:00:00
The product descriptions are detailed and accurate, helping me make informed decisions.
2021-06-10 00:00:00
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2021-06-09 00:00:00
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2021-06-04 00:00:00
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2021-04-24 00:00:00
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2021-03-23 00:00:00
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2021-03-13 00:00:00
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2021-03-13 00:00:00
The reliability of their products has earned my trust as a customer.
2021-03-12 00:00:00
The quality of their components has helped improve the performance of my projects.
2021-03-03 00:00:00
Their attention to detail in packaging ensures that products arrive safely and intact.