RGTH60TS65DGC11 Tech Specifications

ROHM Semiconductor  RGTH60TS65DGC11 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - IGBTs - Single
Manufacturer ROHM Semiconductor
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 650V
Number of Elements 1 Element
Test Conditions 400V, 30A, 10 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 194W
Product Attribute Attribute Value
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 194W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 58A
Reverse Recovery Time 58 ns
Turn On Time 67 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Continuous Collector Current 30A
Turn Off Time-Nom (toff) 179 ns
IGBT Type Trench Field Stop
Gate Charge 58nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 27ns/105ns
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
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RGTH60TS65DGC11 Documents

Download datasheets and manufacturer documentation for   RGTH60TS65DGC11

Others include   "RGTH6"   parts

The following parts include  'RGTH6'

Part # Manufacturer Package Availability
RGTH60TS65DGC11 ROHM Semiconductor TO-247-3 10807
RGTH60TS65GC11 ROHM Semiconductor TO-247-3 182
RGTH60TS65GC13 Rohm Semiconductor TO-247-3 25200
RGTH60TS65DGC13 Rohm Semiconductor TO-247-3 3230
RGTH60TK65GC11 ROHM Semiconductor TO-3PFM, SC-93-3 25200
RGTH60TK65DGC11 ROHM Semiconductor TO-3PFM, SC-93-3 25200

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RGTH60TS65DGC11 Comments

109 reviews

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2024-03-06 00:00:00

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