ROHM Semiconductor RJP020N06T100 Single MOSFETs Transistors 2A
RJP020N06T100
2078-369-RJP020N06T100
TO-243AA
RoHS Compliant
Continuous Drain Current (ID): 2A
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RJP020N06T100 Tech Specifications
ROHM Semiconductor RJP020N06T100 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | ROHM Semiconductor | |
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 2A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V 4.5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 500mW Ta | |
| Turn Off Delay Time | 40 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 300MOhm | |
| Terminal Finish | TIN/TIN COPPER | |
| HTS Code | 8541.21.00.95 | |
| Voltage - Rated DC | 60V | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Current Rating | 2.5A | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 500mW | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 8 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 240m Ω @ 2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4V | |
| Rise Time | 18ns | |
| Vgs (Max) | ±12V | |
| Fall Time (Typ) | 20 ns | |
| Continuous Drain Current (ID) | 2A | |
| Threshold Voltage | 4.5V | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain Current-Max (Abs) (ID) | 2A | |
| Drain to Source Breakdown Voltage | 60V | |
| Nominal Vgs | 4.5 V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
RJP020N06T100 Documents
Download datasheets and manufacturer documentation for RJP020N06T100
PCN Design/Specification
Mult Devices Marking 16/Apr/2018
Others include "RJP02" parts
The following parts include 'RJP02'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| RJP020N06T100 | ROHM Semiconductor | TO-243AA | 11000 |
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| Part # | Manufacturer | Description | Package | RoHS | |
|---|---|---|---|---|---|
 | RJP020N06T100 | ROHM Semiconductor | MOSFET N-CH 60V 2A SOT-89 | TO-243AA | |
 | BSS606NH6327XTSA1 | Infineon Technologies | On a Reel of 1000, N-Channel MOSFET, 3.2 A, 60 V, 4-Pin PG-SOT-89 Infineon BSS606NH6327XTSA1 | TO-243AA | |
| BSS225H6327FTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.09A Automotive 4-Pin(3 Tab) SOT-89 T/R | TO-243AA | |
 | PCP1402-TD-H | ON Semiconductor | ON SEMICONDUCTOR PCP1402-TD-H MOSFET Transistor, N Channel, 1.2 A, 250 V, 1.8 ohm, 10 V, 3.5 V | TO-243AA | |
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RJP020N06T100 Comments
109 reviews
2024-03-06 00:00:00
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2024-03-04 15:56:56
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2024-02-21 00:00:00
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2024-01-24 00:00:00
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2024-01-12 00:00:00
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2024-01-10 00:00:00
Excellent seller, always ready to help.
2024-01-03 00:00:00
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2023-11-28 00:00:00
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2023-11-22 00:00:00
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2023-11-21 00:00:00
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